Target isotope effect in high energy photon production atE/A=10 MeV

A comparison has been made between the production of high energy (E _γ≧30 MeV)γ rays from the bombardment of¹²⁴Sn and¹¹²Sn targets withE/A= 10 MeV¹²C ions. The results are well explained by then-p bremsstrahlung model and do not indicate the need for any new processes.     

X-ray microprobe of orbital alignment in strong-field ionized atoms

We have developed a synchrotron-based, time-resolved x-ray microprobe to investigate optical strong-field processes at intermediate intensities (10(14) - 10(15) W/cm2). This quantum-state specific probe has enabled the direct observation of orbital alignment in the residual ion produced by strong-field ionization of krypton atoms via resonant, polarized x-ray absorption. We found strong alignment to persist for a period long compared to the spin-orbit coupling time scale (6.2 fs). The observed degree of alignment can be explained by models that incorporate spin-orbit coupling. The methodology is applicable to a wide range of problems.     

Radiation-driven hydrodynamics of high- hohlraums on the national ignition facility

The first hohlraum experiments on the National Ignition Facility (NIF) using the initial four laser beams tested radiation temperature limits imposed by plasma filling. For a variety of hohlraum sizes and pulse lengths, the measured x-ray flux shows signatures of filling that coincide with hard x-ray emission from plasma streaming out of the hohlraum. These observations agree with hydrodynamic simulations and with an analytical model that includes hydrodynamic and coronal radiative losses. The modeling predicts radiation temperature limits with full NIF (1.8 MJ), greater, and of longer duration than required for ignition hohlraums.     

Controlled water flooding of polymer electrolyte fuel cells applying superhydrophobic gas diffusion layer

Water transport is critical to the successful implementation of polymer electrolyte fuel cells (PEFC), especially in long-term and dynamic operation in automotives. Liquid water appears in the fuel cells not only from the water generated at the cathode catalyst layer but also as a result of condensation of water vapor from the humidified gases. In this study, we report a simple approach to prepare a superhydrophobic gas diffusion layer by chemical vapor deposition of polydimethylsiloxane without significant change in pore size of gas diffusion layer unlike other approach adding hydrophobic agent such as polytetrafluoroethylene. A superhydrophobic coating on the GDL can be obtained, leading to exceptionally enhanced power performance and stability of PEFC especially at a high current where water transport becomes more critical.     

Comparison of modeling approaches to ultrasonic testing at near critical angles

Modeling of ultrasonic testing has been paid a great attention in nondestructive evaluation community recently since it can provide thorough understanding of underlying physics of ultrasonic testing. As a result, there have been developed various modeling approaches up to now. Especially, many practical models have been developed based on either the multi-Gaussian beam or the Rayleigh-Sommerfeld integral. This paper discusses the modeling of ultrasonic testing with oblique incidence at the near critical angles using these two approaches. The theoretical models that can predict the reflection signals from side drilled cylindrical holes in solid specimen immersed in water are developed. Then, the theoretical predictions for the oblique incidence at the near critical angles are compared to the experiments for the investigation of model behavior.     

Pulse-amplitude equalization using a polarization-maintaining laser resonator

For the first time to our knowledge, pulse-amplitude equalization of rational-harmonically mode-locked fiber ring laser pulses has been experimentally demonstrated using a polarization-maintaining laser resonator without any additional device. The pulse-amplitude distribution of the laser pulses was controlled by the modulator driving power, and stable pulse-amplitude-equalized pulses with repetition rates of 20, 30, and 40 GHz have been obtained in the linear region of the modulator.     

A particular solution of Heun equation for Hulthen and Woods‐Saxon potentials

In this article a particular solution of Heun equation is derived by making use of the Nikiforov‐Uvarov (NU) method which provides exact solutions for general hypergeometric equation and eigenvalues together with eigenfunctions of the Heun equation for this particular solution are obtained. One to one correspondence (isomorphism) of the aforesaid equation with the radial Schrödinger equation is emphasized and also physical counterparts of the parameters in this equation are put forward by introducing solutions for two different potential functions (Hulthen and Woods‐Saxon potentials).

     

Ferroelectric and dielectric properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> thin films grown on Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> film layer

Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi₄Ti₄O₁₅ grown on Bi₄Ti₃O₁₂, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared on a Pt(111)/Ti/SiO₂/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin films were 645 and 0.09, respectively, at 100 kHz. The value of remnant polarization (2P _r) measured from the ferroelectric thin film capacitors was 60.5 μC/cm² at electric field of 200 kV/cm. The remnant polarization was reduced by 22% of the initial value after 10¹⁰ switching cycles. The results showed that the ferroelectric and dielectric properties of the SrBi₄Ti₄O₁₅ on Bi₄Ti₃O₁₂ ferroelectric thin films were better than those of the SrBi₄Ti₄O₁₅ grown on a Pt-coated Si substrate suggesting that the improved properties may be due to the different nucleation and growth kinetics of SrBi₄Ti₄O₁₅ on the c-axis-oriented Bi₄Ti₃O₁₂ layer or on the Pt-coated Si substrate.