Air stability of PTCDI‐C13‐based n‐OFETs on polymer interfacial layers

This Letter reports the novel use of poly(9‐vinylcarbazole) (PVK) as a dielectric interfacial layer for n‐type organic field‐effect transistors (n‐OFETs). With PVK, both the air stability and electron mobility of N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (PTCDI‐C13)‐based OFETs were improved. Among the PVKs with different weight‐average molecular weight (M_w), PVK with high M_w showed good performance. The high glass transition temperature of PVK enabled thermal post annealing of the active layer, which resulted in a high electron mobility of 0.61 cm²/Vs. This mobility was maintained at 90% and 59% after 4 days and 105 days in air, respectively. The PVK interfacial layer reduced the trapped charges in the PTCDI‐C13‐based n‐OFET for air‐exposure and caused a decrease in the threshold voltage shift.

     

Soft X‐ray absorption spectroscopy and resonant inelastic X‐ray scattering spectroscopy below 100 eV: probing first‐row transition‐metal M‐edges in chemical complexes

X‐ray absorption and scattering spectroscopies involving the 3d transition‐metal K‐ and L‐edges have a long history in studying inorganic and bioinorganic molecules. However, there have been very few studies using the M‐edges, which are below 100 eV. Synchrotron‐based X‐ray sources can have higher energy resolution at M‐edges. M‐edge X‐ray absorption spectroscopy (XAS) and resonant inelastic X‐ray scattering (RIXS) could therefore provide complementary information to K‐ and L‐edge spectroscopies. In this study, M_2,3‐edge XAS on several Co, Ni and Cu complexes are measured and their spectral information, such as chemical shifts and covalency effects, are analyzed and discussed. In addition, M_2,3‐edge RIXS on NiO, NiF₂ and two other covalent complexes have been performed and different d–d transition patterns have been observed. Although still preliminary, this work on 3d metal complexes demonstrates the potential to use M‐edge XAS and RIXS on more complicated 3d metal complexes in the future. The potential for using high‐sensitivity and high‐resolution superconducting tunnel junction X‐ray detectors below 100 eV is also illustrated and discussed.     

Engineering silicon-based photonic crystal cavities for NV-center quantum information processing

Silicon slab photonic crystal micro cavities designed for of-resonant coupling to nitrogen vacancy (NV) centers were simulated and fabricated. FDTD-simulations show the partial density of states spectrally near the NV-center electric dipole transition can be tuned to reduce decoherence of an excited NV-center despite this transition being above the silicon electronic band gap. The partial density of states at the NV-center transition can be made to dip below half of the free-space partial density of states without significantly affecting the cavity mode quality factor. These promising results sustain the merits of using silicon as a base photonic crystal material for quantum information processing even when integrated emitters radiate above the electronic band gap of silicon.     

Spin-orbital pattern dependent polaron absorption in manganites

We systematically investigated optical properties of Nd1-xSrxMnO3 single crystals ( x = 0.40, 0.50, 0.55, and 0.65). They are similar in their spin-orbital (SO) disordered states at room temperature. At low temperature, the crystals enter into various SO ordered states, i.e., F-, CE-, A-, and C-type orderings, and their mid-infrared absorptions become quite different. The remarkable variation can be explained by polaron dynamics which depend on the ordering patterns. This SO pattern dependent polaron model can also explain the pseudo CE-type ordering case, demonstrating that this scheme can explain the carrier dynamics in complex SO configurations.     

Modelling temperature and concentration dependent solid/liquid interfacial energies

Models for the prediction of the solid/liquid interfacial energy in pure substances and binary alloys, respectively, are reviewed and extended regarding the temperature and concentration dependence of the required thermodynamic entities. A CALPHAD-type thermodynamic database is used to introduce temperature and concentration dependent melting enthalpies and entropies for multicomponent alloys in the temperature range between liquidus and solidus. Several suitable models are extended and employed to calculate the temperature and concentration dependent interfacial energy for Al–FCC with their respective liquids and compared with experimental data.     

A neutral gas model for electron swarms

A BGK-type Boltzmann equation for a neutral gas is considered as a model for electron swarms, because the gas and the electron Boltzmann equation have a common diffusion approximation. Both full- and half-range theory are developed using orthogonality methods of solution. Preliminary comparisons with diffusion theory are presented.     

Two-proton correlations in the target fragmentation region of nuclear collisions at 200A GeV

Correlations between protons are studied in the target fragmentation region of reactions of protons and¹⁶O with C, Cu, Ag, Au and of³²S with Al and Au at 200A GeV. The emitted protons were measured with the Plastic Ball detector in the WA80 experiment at the CERN SPS. The comparison of the correlation function with calculations, assuming a spherical, gaussian shaped source with a lifetime τ=0 fm/c, allows the extraction of radius parameters. The values are very close to those expected from the geometry of the target nuclei and increase with the target mass as αA _Target ^1/3 . Even in proton induced reactions the whole target nucleus is involved. The dependence of the radii on centrality, polar angleθ _lab, and energy, and their relation to measured proton yields are presented.     

Modified gap states in Fe/MgO/SrTiO3 interfaces studied with scanning tunneling microscopy

The geometric and electronic structures of Fe islands on MgO film layers were studied with scanning tunneling microscopy and spectroscopy. The MgO layers were grown on a Nb-doped single crystal SrTiO₃ (100) surface. Deposited Fe atoms aggregate into islands, the height and diameter of which are about 2.5 and 9.4 nm respectively. Fe islands modify the electronic structure of MgO surface; a ring type depression in the scanning tunneling microscope topography appears by lowered local electron density of states around Fe islands. We find that adsorbed Fe atoms reduce the gap states of MgO layers around Fe islands, which is attributed to the reason for the depletion of the electronic density of states.