Investigation of the Doughnut Effect in Cy3-Labeled Protein Microarrays using Scanning Near-Field Optical Microscope

We demonstrate the fluorescence mapping of protein microarrays by the technique of scanning near-field optical microscopy (SNOM) and confocal microscopy. Micron sized spots (300 μm) of human Immunoglobulin G (hIgG) protein with and without a Cy3 dye labeling have been fabricated on glass substrates by an immobilization method which makes use of calixcrown derivatives termed Prolinker. We have also tried to probe into the well-known “doughnut effect” observed in fluorescence images of proteins using the SNOM technique. The topographic and fluorescence SNOM images revealed that the number of proteins at the boundary of the spot were more than at the center in the case of the microarray spot which showed brighter luminescence at the edge than at the center in the confocal image.     

Fourier-domain low-coherence interferometry for differential mode delay analysis of an optical fiber

We propose a novel mode analysis and differential mode delay measurement method for an optical fiber using Fourier-domain low-coherence interferometry. A spectral interferometer based on a Mach-Zehnder interferometer setup was used with a broadband source and an optical spectrum analyzer to detect relative temporal delays between the guided modes of a few-mode optical fiber by analyzing spectral interference signals. We have shown that experimental results of the proposed method agree well with those results obtained by using a conventional time-domain measurement method. We have demonstrated that this new mode analysis technique has high sensitivity (<60 dB) and very good resolution (<1 ps/m).     

Low-order modeling and dynamic characterization of rapid thermal processing

A low-order model of rapid thermal processing (RTP) of semiconductor wafers is derived. The first-principles nonlinear model describes the static and dynamic thermal behavior of a wafer with approximate spatial temperature uniformity undergoing rapid heating and cooling in a multilamp RTP chamber. The model is verified experimentally for a range of operating temperatures from 400° C to 900° C and pressures of 1 Torr and 1 atmosphere in an inert N₂ environment. Theoretical predictions suggest model validity over a still wider range of operating conditions. One advantage of the low-order model over previous high-order and statistical models is that the proposed model contains a small number of fundamental parameters and functions that, if necessary, are easily identifiable. Furthermore, because of reduced computational complexity, the low-order model can be used in real-time predictive applications including signal processing and process control design. In studying and verifying the model, the dynamic behavior of a semiconductor wafer undergoing rapid temperature changes is characterized. Close comparison between theory and experiment in terms of the wafer eigenvalue and dc gain is demonstrated; the strong nonlinear effects of temperature are shown. Convective heat transfer losses are also examined and are shown to increase with radial position on the wafer.     

EPR and 1H and 13C dynamic nuclear polarization studies of a molecularly doped polymer: bisphenol A polycarbonate doped with trianisylamine and trianisylaminium perchlorate.

We have investigated the EPR and DNP behavior of a molecularly doped polymer modeling those used to transport electronic charge in electrophotography. The EPR spectra show no evidence of the superexchange reported for a closely related system based on tri-p-tolylamine. The difference may be due to larger charge-transfer matrix elements in the latter system. An unambiguous interpretation of the observed 1H DNP was rendered difficult by the unanticipated asymmetry of the EPR spectra. We report extensive data on the "three-spin" effect evident in the DNP-enhanced 13C NMR spectra, and comment on its potential for characterizing polymer interfaces.     

Strong visible PL from the nc-Si thin film by Ni silicide mediated crystallization

We studied the growth of nanocrystalline silicon (nc-Si) thin film exhibiting a strong room temperature photoluminescence (PL) at 1.81–2.003 eV. The amorphous silicon was crystallized by Ni silicide mediated crystallization (Ni SMC) and then Secco-etched to exhibit the PL. The PL peak energy and intensity increase with increasing the metal density on the a-Si because of the reduction in the grain size down to 2 nm. The photoluminescence energy and peak intensity depend strongly on the Secco etch time because the grain size is reduced by etching the grain boundaries.     

Single spin and chiral glass transition in vector spin glasses in three dimensions

Results of Monte Carlo simulations of XY and Heisenberg spin glass models in three dimensions are presented. A finite-size scaling analysis of the correlation length of the spins and chiralities of both models shows that there is a single, finite-temperature transition at which both spins and chiralities order.     

Observation of a quantized hall resistivity in the presence of mesoscopic fluctuations

We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations. Focusing on the lowest Landau level, we find that, while the diagonal resistivity displays strong fluctuations, the Hall resistivity is free of fluctuations and remains quantized at its nu=1 value, h/e(2). This is true also in the insulating phase that terminates the quantum Hall series. These results extend the validity of the semicircle law of conductivity in the quantum Hall effect to the mesoscopic regime.     

Investigation of the onset and development of forward scattering in an underdense plasma

We investigate the distortion of a spatial intensity modulation imposed on a 527 nm f/10 probe beam as it transmits through an underdense plasma characterized with Thomson scattering. Combining the measurements with full wave simulations of beam propagation through the entire plasma show that the key features of the data can be reproduced using the Kaiser thermal transport model.     

Temperature effect on deposition rate of silicon nitride films

Temperature effects on deposition rate of silicon nitride films were characterized by building a neural network prediction model. The silicon nitride films were deposited by using a plasma enhanced chemical vapor deposition system and process parameter effects were systematically characterized by 2⁶⁻¹ fractional factorial experiment. The process parameters involved include a radio frequency power, pressure, temperature, SiH₄, N₂, and NH₃ flow rates. The prediction performance of generalized regression neural network was drastically improved by optimizing multi-valued training factors using a genetic algorithm. Several 3D plots were generated to investigate parameter effects at various temperatures. Predicted variations were experimentally validated. The temperature effect on the deposition rate was a complex function of parameters but N₂ flow rate. Larger decreases in the deposition rate with the temperature were only noticed at lower SiH₄ (or higher NH₃) flow rates. Typical effects of SiH₄ or NH₃ flow rate were only observed at higher or lower temperatures. A comparison with the refractive index model facilitated a selective choice of either SiH₄ or NH₃ for process optimization.     

Crystallinity and morphology dependent luminescence of Li-doped Y2−xGdxO3:Eu thin film phosphors

The influence of lithium doping on the crystallization, the surface morphology, and the luminescent properties of pulsed laser deposited Y_2−xGd_xO₃:Eu³⁺ thin film phosphors was investigated. The crystallinity, the surface morphology, and the photoluminescence (PL) of films depended highly on the Li-doping and the Gd content. The relationship between the crystalline and morphological structures and the luminescent properties was studied, and Li⁺ doping was found to effectively enhance not only the crystallinity but also the luminescent brightness of Y_2−xGd_xO₃:Eu³⁺ thin films. In particular, the incorporation of Li and Gd into the Y₂O₃ lattice could induce remarkable increase in the PL. The highest emission intensity was observed Li-doped Y_1.35Gd_0.6O₃:Eu³⁺ thin films whose brightness was increased by a factor of 4.6 in comparison with that of Li-doped Y₂O₃:Eu³⁺ thin films.