Synthesis and structural revision of marine eicosanoid agardhilactone

Synthesis of the marine eicosanoid agardhilactone has been achieved. The relative and absolute configuration of agardhilactone was successfully determined.     

Quantitative Bestimmungen

Ohne Zusammenfassung     

Artabotryols A – E,New Lanostane Triterpenes from the Seeds of Artabotrys odoratissimus

Six new lanostane triterpenes, artabotryols A, B, C1, C2, D, and E ( 1, 2, 3a, 3b, 4 , and 5 , resp.) have been isolated from the seeds of Artabotrys odoratissimus (Annonaceae). Their structures have been established as (3α,22S,25R)‐3‐hydroxy‐22,26‐epoxylanost‐8‐en‐26‐one ( 1 ), (3α,22S,25R)‐22,26‐epoxylanost‐8‐ene‐3,26‐diol ( 2 ), (3α,22S,25R,26R)‐26‐methoxy‐22,26‐epoxylanost‐8‐en‐3‐ol ( 3a ), (3α,22S,25R, 26S)‐26‐methoxy‐22,26‐epoxylanost‐8‐en‐3‐ol ( 3b ), (3α,22S,25R)‐3,22‐dihydroxylanost‐8‐en‐26‐oic acid ( 4 ) and (3α,7α,11α,22S,25R)‐3,7,11‐trihydroxy‐22,26‐epoxylanost‐8‐en‐26‐one ( 5 ) by spectroscopic studies and chemical correlations.     

High pressure studies of viscosity effects on isomerization

Abstract

The viscosity dependence of the isomerization process with comparatively low potential barrier was studied as a model of one-dimensional barrier crossing.

We found that the ground-state isomerization of DODCI fails to fit the Kramers equation. We analyzed this non-Kramers behavior by means of an approach of frequency dependent friction.     

Dependence of photoluminescence of CdSe/ZnS on excitation wavelength

We have found that the photoluminescence (PL) intensity of CdSe/ZnS nanocrystals placed on a thin film of insulator (GaAsOx/GaAs) depends on excitation wavelength through the interference effects of the excitation light. By employing the multi-reflection/interference calculation, the insulator thickness of the underlying non-uniform patterns can be evaluated by the simple observation of CdSe/ZnS PL with a couple of excitation wavelengths. Moreover, the differences observed for the temporal evolution of CdSe/ZnS PL (blue shifts and degradation) among the excitation wavelengths suggest that the photo-induced changes of chemical composition and surface ligands are responsible for blue shifts and degradation, respectively.     

Uniaxially aligned carbon nanofibers derived from electrospun precursor yarns

Unlike conventional electrospun polymer fibers deposited on a target electrode as a randomly oriented mesh, poly(p‐xylenetetrahydrothiophenium chloride) was electrospun into centimeters‐long yarns vertically on the surface of the electrode but parallel to the electric field. The diameter of the yarn was strongly affected by the concentration, spinning rate, and viscosity of the polymer solution, but less dependent on the applied voltage. The subsequent carbonization of thus‐electrospun yarns at 600–1000 °C resulted in uniaxially aligned carbon nanofibers with average diameters of 127–184 nm. On the basis of Raman spectra, the graphitic crystallite size and the molar fraction of graphite were estimated to be 1.2–1.4 and 0.21–0.24 nm, respectively. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 46: 305–310, 2008     

Multiatomic step formation on GaAs(001) vicinal surfaces during thermal treatment

We observed the surface morphology of vicinal GaAs(001) after thermal treatment in AsH₃/H₂ atmosphere by atomic force microscopy (AFM). Clear multiatomic steps were formed under the high temperature thermal treatment. Next, we investigated the mechanism of step bunching during thermal treatment by two experiments from the view point of Ga atom evaporation. One is the selective thermal treatment using a partially masked GaAs wafer, and the evaporation amount of Ga atoms was estimated by AFM. The other is the investigation of photoluminescence (PL) peak energy shifts for AlGaAs/GaAs single quantum wells with a thermal treatment process at the top of the GaAs quantum well layer, compared to those without thermal treatment. These results indicate that the evaporation hardly occurs during the thermal treatment process. Therefore, step bunching phenomena on GaAs(001) vicinal surfaces during thermal treatment are probably caused by migration of the atoms detached from upside steps and their re-incorporation to downside steps.