首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   4385篇
  免费   89篇
  国内免费   11篇
化学   3451篇
晶体学   91篇
力学   51篇
数学   170篇
物理学   722篇
  2021年   33篇
  2020年   40篇
  2019年   44篇
  2018年   30篇
  2016年   59篇
  2015年   71篇
  2014年   75篇
  2013年   198篇
  2012年   171篇
  2011年   196篇
  2010年   104篇
  2009年   124篇
  2008年   206篇
  2007年   236篇
  2006年   262篇
  2005年   211篇
  2004年   228篇
  2003年   190篇
  2002年   170篇
  2001年   108篇
  2000年   95篇
  1999年   59篇
  1998年   50篇
  1997年   39篇
  1996年   52篇
  1995年   49篇
  1994年   59篇
  1993年   49篇
  1992年   90篇
  1991年   52篇
  1990年   48篇
  1989年   39篇
  1988年   55篇
  1987年   53篇
  1986年   53篇
  1985年   64篇
  1984年   65篇
  1983年   38篇
  1982年   60篇
  1981年   62篇
  1980年   60篇
  1979年   72篇
  1978年   47篇
  1977年   56篇
  1976年   49篇
  1975年   49篇
  1974年   49篇
  1973年   42篇
  1969年   18篇
  1968年   30篇
排序方式: 共有4485条查询结果,搜索用时 343 毫秒
121.
New vinylsilanes (M2), i. e. phenylvinylsilane (I), allylmethylsilane (II), allylphenylsilane (III), and p-vinylphenylmethylsilane (IV), were prepared and copolymerized with styrene (M1). The monomer reactivity ratios were r1 = 5.7 and r2 = 0, r1 = 36 and r2 = 0, r1 = 29 and r2 = 01, and r1 = 0.91 and r2 = 1.1, respectively. From the results of infrared and NMR spectra it was indicated that the vinylsilanes participated in copolymerization in the form of a vinyl type of polymerization and not in the form of a hydrogen-transfer type of polymerization. The reaction of copolymer with alcohols and methyl methacrylate and appropriate catalysts was investigated.  相似文献   
122.
123.
Insulating tubular BN sheathing on semiconducting nanowires   总被引:1,自引:0,他引:1  
An effective method was developed for generation of insulating tubular boron nitride (BN)-sheathed nanostructures. ZnS nanowires and multilayered Si-SiO2 nanowires were successfully sheathed with insulating tubular BN-forming nanocables. Both the semiconductor nanowire cores and the BN sheaths are crystalline with well-uniform morphologies.  相似文献   
124.
Generating high surface area mesoporous transition metal boride is interesting because the incorporation of boron atoms generates lattice distortions that lead to the formation of amorphous metal boride with unique properties in catalysis. Here we report the first synthesis of mesoporous cobalt boron amorphous alloy colloidal particles using a soft template-directed assembly approach. Dual reducing agents are used to precisely control the chemical reduction process of mesoporous cobalt boron nanospheres. The Earth-abundance of cobalt boride combined with the high surface area and mesoporous nanoarchitecture enables solar-energy efficient photothermal conversion of CO2 into CO compared to non-porous cobalt boron alloys and commercial cobalt catalysts.

Generating high surface area mesoporous transition metal boride is challenging but interesting because incorporation of boron atoms can generate lattice distortion to form amorphous metal boride which has unique properties in catalysis.  相似文献   
125.
Summary Trace amounts of tin were concentrated by coprecipitation and determined by electrothermal atomisation atomic absorption spectrometry. Yttrium hydroxide coprecipitated quantitatively 0.1–3 g of tin from 50–500 ml of sample solution at pH 9.5–11.2. The atomic absorbance of tin increased about twice by using an impregnated graphite tube with yttrium. The impregnated graphite tube, furthermore, improved the reproducibility of the measurement of tin. A linear calibration graph was obtained in the range of 0.004–0.12 g/ml of tin. Twenty-three foreign ions did not interfere seriously. The method was applicable to the determination of tin in zinc metal.  相似文献   
126.
(±)-1-Benzyl-3α-hydroxy-4β-methylamino-2-oxopyrrolidine (15) and its cis-isomer (16) were synthesised from 1-benzyl-4-ethoxycarbonyl-2,3-dioxopyrrolidine (2) in several steps. The former (15) was converted to 3-benzyl-6-methyl-2-oxo-3,6-diazabicyclo[3.1.0]hexane (17) with a mixture of triphenylphosphine, carbon tetrachloride and triethylamine.  相似文献   
127.
128.
129.
130.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号