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101.
We consider the q-hypergeometric equation with q
N = 1 and , , . We solve this equation on the space of functions given by a power series multiplied by a power of the logarithmic function. We prove that the subspace of solutions is two-dimensional over the field of quasi-constants. We get a basis for this space explicitly. In terms of this basis, we represent the q-hypergeometric function of the Barnes type constructed by Nishizawa and Ueno. Then we see that this function has logarithmic singularity at the origin. This is a difference between the q-hypergeometric functions with 0 < |q| < 1 and at |q| = 1. 相似文献
102.
Intermolecular coupling reactions of 1,3-dienes and aldehydes via transmetalation of nickelacycle intermediate with (i)Bu(2)Al-acac were investigated. In the reactions, a linear adduct or a branched adduct was produced, depending upon the nature of 1,3-dienes and aldehydes, via two nickelacycles that were relatively stable among the four possible nickelacycles because of the equilibrium with pi-allynickel forms. 相似文献
103.
Uto Y Hirata A Fujita T Takubo S Nagasawa H Hori H 《The Journal of organic chemistry》2002,67(7):2355-2357
We have demonstrated that prenylation of p-halophenols was dependent on the solvent effect and succeeded in o,o'-diprenylation of p-halophenols in water. Following the Mizoroki-Heck coupling of the diprenyl-p-iodophenol 3c with methyl acrylate and then hydrolysis, we first synthesized artepillin C [3-(4-hydroxy-3,5-di(3-methyl-2-butenyl)phenyl)-2(E)-propenoic acid] (1), which is a biologically active constituent of propolis. These reactions may be applicable to the synthesis of various useful natural products such as 2,4,6-trisubstituted phenol derivatives. 相似文献
104.
Ken-Ichi Okamoto Nozomu Tanihara Hitoshi Watanabe Kazuhiro Tanaka Hidetoshi Kita Asumaru Nakamura Yoshihiro Kusuki Kanji Nakagawa 《Journal of Polymer Science.Polymer Physics》1992,30(11):1223-1231
Sorption and diffusion of water vapor are investigated gravimetrically for polyimide films. The activity dependence of the solubility and diffusion coefficients, S and D, respectively, is classified under four types: (1) constant S and D type, (2) dual-mode sorption and transport type, (3) dual-mode type followed by a deviation due to a plasticization effect at high vapor activity, and (4) constant S and D type followed by a deviation due to water cluster formation at high activity. For the dual-mode type, the Henry's law component is much larger than the Langmuir component except at low activity, and therefore deviation in behavior from the first type is small. S is larger for polyimides with higher content of polar groups such as carbonyl, carboxyl, and sulfonyl. D is larger for polyimides with a higher fraction of free space, with some exceptions. The polyimide from 3,3′,4,4′-biphenyltetracarboxylic dianhydride and dimethyl-3,7-diaminodibenzothiophene-5, 5-dioxide belongs to the third type and displays both large S and large D. The polyimide from 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride and 4,4′-oxydianiline belongs to the fourth type, and has the largest D but rather small S because of the hydrophobic C(CF3)2 groups. © 1992 John Wiley & Sons, Inc. 相似文献
105.
Yoshihiro Nakamura 《Integral Equations and Operator Theory》1993,17(3):373-403
The structure of isometries on a Hilbert space are well studied. In this paper we study contractions which are one-dimensional perturbations of isometries, in particular, perturbations of the shift operator onH
2. 相似文献
106.
107.
108.
109.
The growth, movement and nature of outside dislocation, which propagate from heavily phosphorus (>1015 ions/cm2) implanted (111), (100), and (110) silicon layers into unimplanted outside regions by a compressive strain induced during
1100° C wet O2 annealing, are investigated using transmission electron microscopy and x-ray diffraction topography. Outside dislocations
are formed, mainly on (111) planes., by the glide motion of dislocation networks formed in implanted layers during early annealing.
This results in dislocations extending into the unimplanted areas to different degrees, in the order of, from the largest
to smallest, (111), (110), and (100) wafers. In (110) wafers, the [001] oriented dislocations in the implanted regions rise
to the surface at the implant and unimplant boundary. On the other hand, the [110] dislocations penetrate into the unimplanted
region. Two sets of orthogonal 〈110〉 oriented dislocations generated in (100) implanted wafers behave in the same manner as
the [001] dislocations in (110) wafers. Some sources of the compressive strain related to the generation of these dislocations
are discussed. 相似文献
110.
Yoshihiro Takahashi Takashi Kitamura Kenji Uchida Masao Tomura 《Journal of luminescence》1980,21(3):269-275
Emission spectra and decay times of the fluorescence excited at the absorption edge region in pyrene crystals were measured. At liquid nitrogen temperature, the fluorescence under the excitation at 390 nm is considered as the excimer emission and its band peak shifts a little to the short wavelength in comparison with that of the excimer emission under the excitation at 360 nm. The emission decay times under the excitation at the 390 nm and 360 nm are about 155 ns and 180 ns, respectively, at liquid nitrogen temperature. The former decay time changes its value abruptly near 127 K. This abrupt change of the decay time may be due to the phase transition in pyrene crystals. 相似文献