Outside dislocations generated from phosphorus implanted silicon layers

The growth, movement and nature of outside dislocation, which propagate from heavily phosphorus (>10¹⁵ ions/cm²) implanted (111), (100), and (110) silicon layers into unimplanted outside regions by a compressive strain induced during 1100° C wet O₂ annealing, are investigated using transmission electron microscopy and x-ray diffraction topography. Outside dislocations are formed, mainly on (111) planes., by the glide motion of dislocation networks formed in implanted layers during early annealing. This results in dislocations extending into the unimplanted areas to different degrees, in the order of, from the largest to smallest, (111), (110), and (100) wafers. In (110) wafers, the [001] oriented dislocations in the implanted regions rise to the surface at the implant and unimplant boundary. On the other hand, the [110] dislocations penetrate into the unimplanted region. Two sets of orthogonal 〈110〉 oriented dislocations generated in (100) implanted wafers behave in the same manner as the [001] dislocations in (110) wafers. Some sources of the compressive strain related to the generation of these dislocations are discussed.     

An anomalous emission excited near the absorption edge of pyrene crystals

Emission spectra and decay times of the fluorescence excited at the absorption edge region in pyrene crystals were measured. At liquid nitrogen temperature, the fluorescence under the excitation at 390 nm is considered as the excimer emission and its band peak shifts a little to the short wavelength in comparison with that of the excimer emission under the excitation at 360 nm. The emission decay times under the excitation at the 390 nm and 360 nm are about 155 ns and 180 ns, respectively, at liquid nitrogen temperature. The former decay time changes its value abruptly near 127 K. This abrupt change of the decay time may be due to the phase transition in pyrene crystals.     

Layer-by-layer electrodeposition of copper in the presence of o-phenanthroline, caused by a new type of hidden NDR oscillation with the effective electrode surface area as the key variable

Electrochemical deposition of copper (Cu) from aqueous acidic Cu2+ solutions with o-phenanthroline (o-phen) shows both potential and current oscillations, together with a (partially hidden) N-shaped negative differential resistance (N-NDR), indicating that the oscillations are classified into hidden N-NDR (or HN-NDR) oscillations. The color and the surface morphology of Cu deposits oscillate in synchronization with the potential and current oscillations. Microscopic inspection has shown that dense round Cu leaflets, which look gray, grow in the positive side of the potential oscillation or in the high-current state of the current oscillation, whereas thin Cu leaflets, which look black, grow in the opposite-side stages of the potential and current oscillations, thus finally resulting in a layered Cu deposit with the layer thickness of about 5 microm. The appearance of the NDR is explained to be due to adsorption of the reduced form of a [Cu(II)(o-phen)2]2+ complex, which suppresses the Cu electrodeposition. The increase in the effective electrode surface area by growth of thin Cu leaflets, on the other hand, causes a current increase that can hide the NDR. This NDR-hiding mechanism is of a new type and the present oscillation is regarded as a new-type of HN-NDR oscillator.     

Excited state property of hardly photodissociable heme-CO adduct studied by time-dependent density functional theory

While most of CO-bound hemes are easily photodissociated with a quantum yield of nearly unity, we occasionally encounter a CO-heme which appears hardly photodissociable under the ordinary measurement conditions of resonance Raman spectra using CW laser excitation and a spinning cell. This study aims to understand such hemes theoretically, that is, the excited-state properties of the five-coordinate heme-CO adduct (5cH) as well as the 6c heme-CO adduct (6cH) with a weak axial ligand. Using a hybrid density functional theory, we scrutinized the properties of the ground and excited spin states of the computational models of a 5cH and a water-ligated 6cH (6cH-H(2)O) and compared these properties with those of a photodissociable imidazole-ligated 6cH (6cH-Im). Jahn-Teller softening for the Fe-C-O bending potential in the a(1)-e excited state was suggested. The excited-state properties of 6cH-Im and 5cH were further studied with time-dependent DFT theory. The reaction products of 6cH-Im and 5cH were assumed to be quintet and triplet states, respectively. According to the time-dependent DFT calculations, the Q excited state of 6cH-Im, which is initially a pure pi-pi state, crosses the Fe-CO dissociative state (2A') without large elongation of the Fe-CO bond. In contrast, the Q state of the 5cH does not cross the Fe-CO dissociative state but results in the formation of the excited spin state with a bent Fe-C-O. Consequently, photoisomerization from linear to bent Fe-C-O in the 5cH is a likely mechanism for apparent nonphotodissociation.     

Dual Meissner effect and magnetic displacement currents

The dual Meissner effect is observed without monopoles in quenched SU(2) QCD with Landau gauge fixing. Magnetic displacement currents that are time-dependent Abelian magnetic fields act as solenoidal currents squeezing Abelian electric fields. Monopoles are not always necessary for the dual Meissner effect. A mean-field calculation suggests that the dual Meissner effect through the mass generation of the Abelian electric field is related to a gluon condensate A(a)(mu)A(a)(mu) not equal 0 of mass dimension 2.     

Intrinsic vacancy-induced nanoscale wire structure in heteroepitaxial Ga2Se3/Si(001)

A highly anisotropic growth morphology is found for heteroepitaxial gallium sesquiselenide (Ga2Se3) on the lattice matched substrate, arsenic-terminated Si(001). Scanning tunneling microscopy of Ga2Se3 films reveals nanoscale, wirelike structures covering the surface in parallel lines, less than 1 nm wide and up to 30 nm long. Core-level photoemission spectroscopy and diffraction reveals the local structure of buried Ga and Se atoms to reflect the bulk, defected zinc-blende structure of beta-Ga2Se3, which contains ordered 110 arrays of Ga vacancies. These ordered vacancy lines are proposed to be responsible for the observed growth anisotropy in heteroepitaxial Ga2Se3.