Dimensional variation in production of high-aspect-ratio micro-pillars array by micro powder injection molding

Micro powder injection molding (μPIM) is one of the potential processes for the mass production of metallic microstructures and micro components. Here, μPIM is the miniaturization of conventional PIM, which involves four processing steps: mixing, injection molding, debinding and sintering. This paper looks into the feasibility and effectiveness of μPIM as a key mass production process for the fabrication of metallic micro components. For it to be an effective re-production process, it is imperative to examine how well parts can be duplicated/fabricated from a master mold. In this work, the dimensional variation of high-aspect-ratio micro-pillars arrays, in particular the dimensional shrinkage, global warpage, and surface roughness at each stage of the μPIM process for a range of molding pressures, are quantified and compared in detail. The sensitivity of the dimensional variation of the microstructures to the packing pressure is reported. The mechanism behind the dimensional variation is analyzed. PACS 81.20.Ev; 81.20.Hy; 81.70.Fy; 07.60.Ly; 81.05.-t     

Temperature and injection current dependent electroluminescence study of GaInP/AlGaInP quantum well laser diode grown using tertiarybutylarsine and tertiarybutylphosphine

GaInP/AlGaInP triple quantum well (TQW) lasers, grown by metalorganic chemical vapor deposition (MOCVD) using tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP), were fabricated with a pulsed anodic oxidation (PAO) process. The devices worked at room temperature (RT) with the lowest threshold current density (J_th) of 1.5 kA/cm² ever reported for GaInP/AlGaInP lasers grown using TBAs and TBP. Temperature dependent (35–250 K) electroluminescence (EL) study of the GaInP/AlGaInP laser diode showed almost the same luminescence quenching behavior at a high temperature region (120–250 K), independent of the injection current (100–150 mA). A model involving a nonradiative recombination mechanism was presented to interpret the EL quenching behavior over the experimental temperature range. The nonradiative recombination centers in the Al-containing barrier or cladding layer are believed to contribute to the loss of carriers via nonradiative recombination. PACS 78.60.Fi; 71.20.Nr; 78.67.De; 81.15.Gh; 42.55.Px     

Magnetic behavior of MnAs precipitates in Ga1−xMnxAs diluted magnetic semiconductor

Ferromagnetic Ga_1−xMn_xAs layers (where x≈4.7–5.5%) were grown on (1 0 0) GaAs substrates by molecular beam epitaxy. These p-type (Ga,Mn)As films were revealed to have a ferromagnetic structure and ferromagnetism is observed up to a Curie temperature of 318 K, which is ascribed to the presence of MnAs secondary magnetic phases within the film. It is highly likely that the phase segregation occurs due to the high Mn cell temperature around 890–920 °C, as it is well established that GaMnAs is unstable at such a high temperature. The MnAs precipitate in the samples with x≈4.7–5.5% has a Curie temperature T_c≈318 K, which was characterized from field-cooled and zero-field-cooled magnetization curves.     

Thermal and chemical nanofractal relaxation

We studied shape relaxation of nano-fractal islands, during annealing, after their growth from antimony cluster deposition on graphite surface. Annealing at 180^°C shows evidence of an increase of the fractal branch width with time followed by branch fragmentation, without changing the fractal dimension. The time evolution of the width of the arm suggests the surface self-diffusion mechanism as the main relaxation process. With Monte Carlo simulations, we confirmed the observed behavior. Comparison is done with our previous results on fragmentation of nano-fractal silver islands when impurity added to the incident cluster promotes rapid fragmentation by surface self-diffusion enhancement [1].     

Propagation of time-reversed Lamb waves in acrylic cylindrical tubes as cortical-bone-mimicking phantoms

The present study aims to investigate the propagation of time-reversed Lamb waves in acrylic cylindrical tubes as cortical-bone-mimicking phantoms. Time-reversed Lamb waves could be successfully launched in 6 acrylic tubes with wall thicknesses from 2 to 12 mm by using a modified time reversal method. The group velocities of the time-reversed Lamb waves in the acrylic tubes were measured by using the axial transmission technique. They decreased very slightly with increasing wall thickness, showing good agreement with the theoretical group velocity of the A0 Lamb wave in the acrylic plate. These results suggest that the time-reversed Lamb waves in the acrylic tubes would essentially behave as the A0 Lamb wave, consistent with the behavior of the slow guided wave in long cortical bones. It is expected that the application of the time-reversed Lamb waves in long bones would enhance clinical potential of ultrasonic technologies for the diagnosis of osteoporosis.     

Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

In this study, a phase-change memory device was fabricated and the origin of device failure mode was examined using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Ge₂Sb₂Te₅ (GST) was used as the active phase-change material in the memory device and the active pore size was designed to be 0.5 m. After the programming signals of more than 2×10⁶ cycles were repeatedly applied to the device, the high-resistance memory state (reset) could not be rewritten and the cell resistance was fixed at the low-resistance state (set). Based on TEM and EDS studies, Sb excess and Ge deficiency in the device operating region had a strong effect on device reliability, especially under endurance-demanding conditions. An abnormal segregation and oxidation of Ge also was observed in the region between the device operating and inactive peripheral regions. To guarantee an data endurability of more than 1×10¹⁰ cycles of PRAM, it is very important to develop phase-change materials with more stable compositions and to reduce the current required for programming.