用于曲面精密检测的新型光纤三角传感器研究

基于光纤传感技术和三角测量方法，提出了一种用于曲面检测的新型光纤三角传感器。根据所设计的轮辐式接收光纤结构，可以在测量曲面与传感头间位移时，首先获取被测点处微面元的倾斜信息，以便对传感器测量值进行实时误差修正，从而解决了被测表面倾斜对坐标测量带来的影响。该传感器还能有效地消除环境光干扰、光源波动、表面反射率变化等对测量带来的影响。建立了传感器测量的数学模型。理论分析和初步的实验结果证明了系统的有效性和实用性。该传感器系统不稳定性好于0.3%，横向分辨率好于8μm，高度分辨率好于0.1μm。     

独立不同分布随机变盆序列的部分和的增量有多小

关于独立同分布随机变量部分和的增量有多小问题，目前已有了著名的结果.本文通过与独立同分布情形时完全不同的途径，讨论了独立不同分布情形时相应的问题.在矩母函数存在的条件下，获得了与同分布情形相近的结论.     

高压下液态Ag-20 at%Ge合金的凝固及密排六方亚稳相的形成

 利用高压淬火方法，在液态Ag-20at%Ge合金的凝固过程中，对比液态急冷低四个数量级的冷却速率得到了单相密排六方结构亚稳相，其点阵参数为a=0.289 8 nm，c=0.470 8 nm，c/a=1.625。     

Memory Effect in Ceramic Superconductors

We measured the time decay of the magnetic moment of high T_c superconductors YBa₂Cu₃O_7-δ ceramic samples and found the memory effect which has hitherto been reported only in single crystals. The temperature and field ranges, especially the memory phenomenon in ceramic samples at liquid nitrogen temperature can only be understood in a combined picture of both flux creep and glass behaviour     

随机删失下乘积限过程和累积失效率过程振动模的局部渐近性

在随机删失下研究了乘积限过程和累积失效率过程的振动模的局部性质 .给出了这两个过程的振动模的重对数律 ,并应用这些结果得到了几种核密度估计和Bahadur-Kiefer过程的精确收敛速度     

四溴双酚A锑铝双金属化合物的合成及其阻燃性能

以四溴双酚Ａ（ＴＢＡ）合成了在水和空气中稳定的四溴双酚Ａ合锑铝双金属化合物（ＴＢＡＳＡ）．通过ＩＲ、１ＨＮＭＲ和元素分析予以表征，并研究了其对聚乙烯（ＰＥ）和聚环氧乙烷（ＰＥＯ）的阻燃性能．结果表明，这种分子中含有溴、锑和铝的化合物，对聚乙烯和聚环氧乙烷等高聚物材料有高的阻燃性能与消烟效果．     

稳态锁模产生4ps激光脉冲

首次利用ＧａＡｓ光电导开关，控制Ｎｄ：ＹＬＦ激光器腔内Ｑ值，实现稳态锁模，获得脉宽和能量稳定性极高的４ｐｓ激光脉冲。     

Independent cycles with limited size in a graph

Letk and s be two positive integers with s≥3. LetG be a graph of ordern ≥sk. Writen =qk + r, 0 ≤r ≤k - 1. Suppose thatG has minimum degree at least (s - l)k. Then G containsk independent cyclesC ₁,C ₂,...,C _k such thats ≤l(C _i ) ≤q for 1 ≤i ≤r arnds ≤l(C _i ) ≤q + 1 fork -r <i ≤k, where l(C_i) denotes the length ofC _i .     

Growth and optical properties of a new self-Q-switched laser crystal: Cr:Yb3Al5O12

Cr⁴⁺:YbAG (Cr⁴⁺:Yb₃Al₅O₁₂) crystal with a size up to Φ24 mm×30 mm was grown by the Czochralski method. In the absorption spectrum, there are two absorption bands at 939 and 969 nm, respectively, which are suitable for InGaAs diode laser pumping, and there is an absorption band at 1030 nm, which is suitable for passive Q-switched laser output at 1.03 μm. A broad emission spectrum from 970 to 1100 nm was exhibited from 940 nm wavelength pumping. This crystal is promising as a self-Q-switched laser crystal used for compact, efficient, highly stable, passive self-Q-switched thin chip solid-state lasers.