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131.
132.
F. Chen L. Liu Z. Shen G.Q. Xu T.S.A. Hor 《Applied Physics A: Materials Science & Processing》2002,74(2):317-319
Free-standing and supported hydrogenated amorphous carbon films (a:C–H) were prepared upon pyrolysis of the polymer formed
by ethanolamine (EA) and citric acid (CA), under an ambient atmosphere at 300 °C. EA facilitates the formation of the macroscopic
films, while CA is essential for obtaining the a:C–H microstructure, which comprises a mixture of sp2 and sp3 carbon.
Received: 29 May 2001 / Accepted: 17 August 2001 / Published online: 20 December 2001 相似文献
133.
加肋圆柱壳在轴压作用下的屈曲和后屈曲 总被引:2,自引:2,他引:0
本文讨论完善和非完善的,纵向加肋和正交加肋圆柱壳在轴压作用下的屈曲和后屈曲性态.依据文[1]提供的圆柱薄壳屈曲的边界层理论及其分析方法,给出了加肋圆柱壳在轴压作用下的屈曲和后屈曲理论分析.本文同时讨论肋骨与壳板材料不同时对加肋圆柱壳屈曲和后屈曲性态的影响. 相似文献
134.
Chunguang Du Hongyi Chen Shiqun Li 《量子光学学报》2006,12(B08):70-71
Recently, research on left-handed materials (LHMs) has attracted considerable attentions. The LHMs are a kind of metameterial which have negative permittivity and negative permeability, which lead to negative refractive index in a frequency range. The LHMs that have been available so far are in the microwave range and are usually composed of classical particles, such as split-ring resonators. Some quantum phenomena such as spontaneous emission of atoms in the LHMs which are considered to be 'classical background' have also been investigated. Many potential applications of LHMs have been proposed, such as superlenses which, in principle, can achieve arbitrary subwavelength resolution. 相似文献
135.
Bo Jin Xi Wang Jing Chen Feng Zhang Xinli Cheng Zhijun Chen 《Applied Surface Science》2006,252(16):5627-5631
The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si1−xGex (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si1−xGex (x is minimal) layer moved to Si/SiO2 interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM). 相似文献
136.
谈物理实验教学中学生科学素质的培养 总被引:3,自引:0,他引:3
物理教学要实现由“应试教育”向素质教育的转轨,必须改单纯的“学科教育”为“科学教育”,即不仅要让学生掌握必要的物理知识,还要为学生的整体素质发展奠定必需的科学能力和科学品质的基础.笔者通过多年的教学实践和研究深刻地认识到,在物理教学中,加强实验教学是培养学生科学素质的重要途径和关键,也是物理学科实施素质教育的一个十分重要的方面. 相似文献
137.
This paper considers an integrated formulation in selecting the best normal mean in the case of unequal and unknown variances. The formulation separates the parameter space into two disjoint parts, the preference zone (PZ) and the indifference zone (IZ). In the PZ we insist on selecting the best for a correct selection (CS1) but in the IZ we define any selected subset to be correct (CS2) if it contains the best population. We find the least favorable configuration (LFC) and the worst configuration (WC) respectively in PZ and IZ. We derive formulas for P(CS1|LFC), P(CS2|WC) and the bounds for the expected sample size E(N). We also give tables for the procedure parameters to implement the proposed procedure. An example is given to illustrate how to apply the procedure and how to use the table. 相似文献
138.
The breakthrough and stoichiometric SO2 adsorption efficiencies of a biomass supported Na2CO3 system (80 wt %Na2CO3/straw) have reached 48.9% and 80.6% respectively at a desulfurization temperature of 80℃. 相似文献
139.
140.
The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method. 相似文献