77.
Neodymium-substituted Bi
4Ti
3O
12 (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of
the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in different atmospheres,
such as O
2, air, and nitrogen, and vacuum. Irrespective of different annealing atmospheres, all of the BNdT thin films exhibit good
ferroelectric properties, such as a saturated hysteresis loop, good fatigue endurance, and low leakage current density. A
large remanent polarization (P
r) of ∼48 μC/cm
2 with an electric field of 240 kV/cm was observed from the BNdT thin film annealed in O
2 atmosphere. The BNdT thin films annealed in nitrogen and vacuum, at reduced oxygen partial pressures, exhibit smaller P
r than that annealed in oxygen. The difference of P
r of the BNdT thin films annealed in different atmospheres may originate from differences in the grain sizes and the number
of oxygen vacancies.
PACS 77.55.+f; 77.80.-e; 77.80.Fm; 81.15.-z
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