Measurement Accuracy in Phase-Shifting Point Diffraction Interferometer with Two Optical Fibers

A phase-shifting point diffraction interferometer (PS/PDI) with point sources of two single mode optical fibers has been developed, which will be appropriate for the surface figure measurement of large aperture optics on a sub-nanometer scale. To reduce the measurement error factors, a fiber optic plate (FOP) is used as a projection plane for interference pattern. Errors caused by imperfection of optical alignment, such as position of point sources and tilt of FOP, are minimized by analyzing the measured phase data with an original method. Measurement accuracy in the PS/ PDI is estimated with the interference pattern produced by the two optical fiber sources. If inhomogeneity of the FOP and a systematic error of the PS/PDI are eliminated, the measurement accuracy of the present system is estimated to be less than 4nm P-V and 0.7nm rms, respectively, at a measurement wavelength of 632.8 nm.     

High-quality InAlN/GaN heterostructures grown by metal–organic vapor phase epitaxy

We fabricated high-quality InAlN/GaN heterostructures by metal–organic vapor phase epitaxy (MOVPE). X-ray diffraction measurements revealed that InAlN/GaN heterostructures grown under optimal conditions have flat surfaces and abrupt heterointerfaces. Electron mobility from 1200 to 2000 cm²/V s was obtained at room temperature. To our knowledge, this mobility is the highest ever reported for InAlN/GaN heterostructures. We also investigated the relationship between the Al composition and sheet electron density (N_s) for the first time. N_s increased from 1.0×10¹² to 2.7×10¹³ cm⁻² when the Al composition increased from 0.78 to 0.89.     

Effect of Ru crystal orientation on the adhesion characteristics of Cu for ultra-large scale integration interconnects

The adhesion of Cu on Ru substrates with different crystal orientations was evaluated. The crystal orientation of sputter deposited Ru could be changed from (1 0 0) to (0 0 1) by annealing at 650 °C for 20 min. The adhesion of Cu was evaluated by the degree of Cu agglomeration on Ru. Cu films on annealed Ru films with the (0 0 1) crystal orientation showed 28% lower RMS values and 50% lower Ru surface coverage than Cu as-deposited on Ru having the (1 0 0) crystal orientation after annealing at 550 °C for 30 min, which suggest that Cu wettability on the Ru(0 0 1) was better than that on the Ru(1 0 0) plane. The low lattice misfit of 4% between Cu(1 1 1) and Ru(0 0 1) may be the reason for this good adhesion property.     

Quantum-limited noise performance of a mode-locked laser diode

Low-noise operation of a 9-GHz hybridly mode-locked laser diode is demonstrated. The integrated timing jitter was 47 fs (10 Hz to 10 MHz) and 86 fs (10 Hz to 4.5 GHz), with a pulse width of 6.7 ps. The noise performance as a function of filter bandwidth and oscillator noise is also addressed.