Investigation on shape variation of Au nanocrystals

A variety of shapes, such as rod, tripod, -shape and cube, of Au nanocrystals were synthesized by employing different reaction conditions. The nanocrystals and their shape variation were characterized by transmission electron microscopy and UV–vis spectrophotometry. The evolution of shape was accomplished by controlling the parameters used in their synthesis, the concentration of reducing agent and surface capping agent. The effect of synthetic parameters on shape was explored, to determine suitable conditions for producing each shape of nanocrystals. Nanocrystals with different shapes have different plasmon bands in the visible region of the spectrum, which is a valuable property for sensor applications.     

Improved constraints on D0-D0 mixing in D0 --> K+ pi- decays from the Belle detector

We report the results of a search for D0-D0 mixing in D0 --> K+ pi- decays based on 400 fb(-1) of data accumulated by the Belle detector at KEKB. Both assuming CP conservation and allowing for CP violation, we fit the decay-time distribution for the mixing parameters x and y, as well as for the parameter R(D), the ratio of doubly Cabibbo-suppressed decays to Cabibbo-favored decays. The 95% confidence level region in the (x'2,y') plane is obtained using a frequentist method. Assuming CP conservation, we find x'2 < 0.72 x 10(-3) and -9.9 x 10(-3) < y' < 6.8 x 10(-3) at the 95% confidence level; these are the most stringent constraints on the mixing parameters to date. The no-mixing point (0,0) has a confidence level of 3.9%. Assuming no mixing, we measure R(D) = (0.377 +/- 0.008 +/- 0.005)%.     

Phase transformation of Ni-B, Ni-P diffusion barrier deposited electrolessly on Cu interconnect

In this paper, we report that the phase transformation of Ni-B, Ni-P diffusion barriers deposited electrolessly on Cu, for the reason that the Ni-P layer is a more effective diffusion barrier than the Ni-B layer. The Ni₃B crystallized was decomposed to Ni and B₂O₃ above 400 °C and the Ni₃P crystallized was decomposed to Ni and P₂O₅ above 600 °C respectively in Ar atmosphere. Also, the Ni₃B was decomposed to Ni and free B above 400 °C and the Ni₃P was decomposed to Ni and free P above 600 °C respectively in H₂ atmosphere. The decomposed Ni formed a solid solution with Cu. The Cu diffusion occurred above 400 °C for Ni-B layer and above 600 °C for Ni-P layer, respectively. Because the decomposition temperature of Ni-P layer is about 200 °C higher than that of Ni-B layer, the Ni-P layer is a more effective barrier for Cu than the Ni-B layer.     

Study of decay mechanisms in B--->Lambdac+ppi- decays and observation of low-mass structure in the Lambdac+p system

Using a sample of 152 x 10(6) BB pairs accumulated with the Belle detector at the KEKB e+e- collider, we study the decay mechanism of three-body charmed decay B- --> Lambdac+ ppi-. The intermediate two-body decay B--->Sigmac (2455)0 p is observed for the first time with a branching fraction of (3.7 +/- 0.7 +/- 0.4 +/- 1.0) x 10(-5) and a statistical significance of 8.4sigma. We also observe a low-mass enhancement in the (Lambdac+p) system, which can be parametrized as a Breit-Wigner function with a mass of (3.35(-0.02)(+0.01) +/-0.02) GeV/c2 and a width of (0.07(-0.03)(+0.04) +/-0.04) GeV/c2. We measure its branching fraction to be (3.9(-0.7)(+0.8) +/- 0.4 +/- 1.0) x 10(-5) with a statistical significance of 6.2sigma. The errors are statistical, systematic, and that of the Lambdac+-->pK- pi+ decay branching fraction.     

Development of a two-color interferometer for observing wide range electron density profiles with a femtosecond time resolution

A two-color interferometer for preformed plasma characterization is developed. We observe the electron density distribution of preformed plasmas on a 5 μm-thick copper target irradiated with a high-intensity Ti:sapphire laser. The two-color interferometer extended the observable electron density region using a fundamental (800 nm) probe beam to cover the lower density region and a second harmonic (400 nm) probe beam to cover the higher density region, simultaneously. This characterization of the electron density distribution of preformed plasmas with femtosecond time resolution significantly contributes to the understanding of high-intensity laser–thin-foil interactions during high-energy electron, ion, and X-ray generation. PACS 52.38.-r; 52.50.Jm; 52.70.-m     

Observation of two resonant structures in e+ e- -->pi+ pi- psi(2S) via initial-state radiation at Belle

The cross section for e+ e- --> pi+ pi- psi(2S) between threshold and sqrt[s]=5.5 GeV is measured using 673 fb(-1) of data on and off the Upsilon(4S) resonance collected with the Belle detector at KEKB. Two resonant structures are observed in the pi+ pi- psi(2S) invariant-mass distribution, one at 4361 +/- 9 +/- 9 MeV/c2 with a width of 74 +/- 15 +/- 10 MeV/c2, and another at 4664 +/- 11 +/- 5 MeV/c2 with a width of 48 +/- 15 +/- 3 MeV/c2, if the mass spectrum is parametrized with the coherent sum of two Breit-Wigner functions. These values do not match those of any of the known charmonium states.     

Development of a 1K × 1K, 8–12 μm QWIP array

In the on-going evolution of GaAs quantum well infrared photodetectors (QWIPs) we have developed a 1,024 × 1,024 (1K × 1K), 8–12  μm infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using an L3/Cincinnati Electronics silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). We have integrated the 1K × 1K array into an SE-IR based imaging camera system and performed tests over the 50–80 K temperature range achieving BLIP performance at an operating temperature of 57 K. The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. One of the advantages of GaAs QWIP technology is the ability to fabricate arrays in a fashion similar to and compatible with silicon IC technology. The designer’s ability to easily select the spectral response of the material from 3 μm to beyond 15 μm is the result of the success of band-gap engineering and the Army Research Lab is a leader in this area. In this paper we will present the first results of our 1K × 1K QWIP array development including fabrication methodology, test data and imaging capabilities.     

The effect of temperature on collision induced intersystem crossing in the reaction of CH2 with H2

Laser flash photolysis of ketene at 308 nm, coupled with H atom vacuum ultraviolet laser induced fluorescence, was used to determine the branching ratio for the CH₃ + H channel (1a) in the reaction of CH₂¹A₁ (¹CH₂) with H₂, over the temperature range 300–500 K. This reaction channel competes with collision induced intersystem crossing (CIISC) to form triplet methylene, CH₂³B₁ (³CH₂) (channel 1b). The branching ratio for H formation, k_1a/k₁, was determined by measuring the relative H atom yield in three time resolved measurements of H: (i) in ketene, H₂ mixtures, where H is exclusively formed by reaction 1a, (ii) in ketene, H₂, NO mixtures ([NO] [H₂]), where H is formed at short times by 1a and at longer times by ³CH₂ + NO, following 1b, and (iii) in ketene, He, NO mixtures ([NO] [He]), where H is exclusively formed from ³CH₂ + NO, following deactivation of singlet to triplet methylene by He. k_1a/k₁ was found to increase from 0.85 at 300 K to unity at 500 K, with the yield of CIISC decreasing from 0.15 to zero. This is the first measurement of the temperature dependence of the rate coefficient for CIISC in a reactive system. The rate coefficient for CIISC with an inert gas increases with T. It has been suggested that the fractional yield of CIISC will increase with temperature in reactive systems, thus reducing the rate coefficient for reaction at high temperature, with significant consequences for combustion systems. The present experiments demonstrate that this is not the case for reaction with H₂ and implies a different CIISC mechanism for reactive vs inert collision partners.