The queueing model for quantum key distribution network

This paper develops a QKD (quantum key distribution)-based queueing model to investigate the data delay on QKD link and network, especially that based on trusted relays. It shows the mean packet delay performance of the QKD system. Furthermore, it proposes a key buffering policy which could effectively improve the delay performance in practice. The results will be helpful for quality of service in practical QKD systems.     

离焦量对空气中激光诱导铜等离子体光谱特性的影响

利用Nd: YAG脉冲激光在空气中烧蚀金属Cu靶,获得等离子体光谱;采用改变离焦量的方法,研究了离焦量的变化对谱线结构及谱线强度的影响;分析了离焦量分别为1mm、0mm和-2mm时,沿靶面法线方向不同空间距离处电子温度的演化规律;并对等离子体光谱的特性和产生机制进行了讨论. 结果表明,谱线结构、谱线强度和等离子体的电子温度都与离焦量的变化密切相关,聚焦点在-2mm处CuⅠ谱线相对强度出现峰值,电子温度数值最大;聚焦点在-0.5mm和-1.0mm附近谱线相对强度遽然降低的现象是由于等离子体的屏蔽效应造成的.     

频谱分割波分复用无源光网络及色散影响

频谱分割是使用窄带光滤波器选择宽带光源光谱的一个切片的WDM技术,在波分复用无源光网络(WDM-PON)中采用波分复用器((MUX)进行频谱分割,能够实现光网络单元(ONU)的无色化.模型分析表明由于频谱分割的作用,使得波分复用器光通带外的频谱成分被过滤,减小了宽带光源的色散影响.在20 nm CWDM标准信道间隔下,能够以不超过1 dB的光功率代价支持155 Mb/s信号在20 km的G.652常规光纤上传输;在0.8 nm DWDM信道间隔下则能够支持2.5 Gb/s信号传输,色散引起的光功率代价低于0.5 dB.采用中心波长为1550 nm、谱宽70 nm、输出功率为-10 dBm的LED,研制了125 Mb/s速率信号直接调制的无色ONU.在信道间隔为20 nm、光纤长度为20 km的4波长WDM-PON系统上进行测试,色散等因素引起的光功率代价小于1 dB,系统光功率余量则超过5.6 dB.     

LPCVD法制备的高纯半绝缘4H-SiC晶体ESR谱特性

利用电子自旋共振波谱（ESR）仪,分析由低压化学气相沉积（LPCVD）法制备的高纯半绝缘4H-SiC材料本征缺陷.结果发现,在暗场条件下获得的缺陷信息具有碳空位（V_C）及其络合物的特征;谱线具有半高宽较大、峰谷明显不对称的特点.分析认为造成ESR谱线半高宽较大及峰谷不对称现象的主要原因是测试温度较高.同时,吸收谱中峰谷不对称现象及较大半高宽现象的出现还与不对称的晶格结构及缺陷浓度的不均匀分布有关.在110 K测试温度下,能级上的电子分布对ESR谱特性影响很小. 关键词： 低压化学气相沉积 高纯半绝缘4H-SiC 电子自旋共振 本征缺陷     

The research on suspended ZnO nanowire field-effect transistor

This paper reports that a novel type of suspended ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I--V measurements. Single-crystalline ZnO nanowires were synthesized by a hydrothermal method, they were used as a suspended ZnO nanowire channel of back-gate field-effect transistors (FET). The fabricated suspended nanowire FETs showed a p-channel depletion mode, exhibited high on--off current ratio of ～10⁵. When V_DS=2.5 V, the peak transconductances of the suspended FETs were 0.396 μS, the oxide capacitance was found to be 1.547 fF, the pinch-off voltage V_TH was about 0.6 V, the electron mobility was on average 50.17 cm²/Vs. The resistivity of the ZnO nanowire channel was estimated to be 0.96× 10²Ω cm at V_GS = 0 V. These characteristics revealed that the suspended nanowire FET fabricated by the photolithography process had excellent performance. Better contacts between the ZnO nanowire and metal electrodes could be improved through annealing and metal deposition using a focused ion beam.     

Variable Fuzzy Sets and its Application in Comprehensive Risk Evaluation for Flood-control Engineering System

Due to significance of the engineering system for flood control and the multi-dimensional synthesis of the risk evaluation issue that the paper selects typical risk indexes to classify risk degree of flood-control engineering. Under global view of system that the variable fuzzy sets method is presented to set up comprehensive evaluation model for flood-control engineering system (FCES). The method can scientifically and reasonably determine membership degrees and relative membership functions of disquisitive indexes at level interval that relating to engineering, also it can fully use one’s experience and knowledge, qualitative and quantitative information of index system to obtain weights of indexes for operating comprehensive risk evaluation for FCES. The numerical example shows that the proposed method is feasible and effective, and the evaluation results are reasonable.     

Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation

By formation of an intermediate semiconductor layer (ISL) with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method (TLM) test patterns is formed on N-wells created by P⁺ ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρ_c as low as 4.23× 10^-5~Ωega \cdotcm² is achieved after annealing in N₂ at 800~°C for 3~min, which is much lower than that (>900~°C) in the typical SiC metallisation process. The sheet resistance R_sh of the implanted layers is 1.5~kΩega /\Box. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge⁺ ion implantations.     

Effects of CO2 activation on porous structures of coconut shell-based activated carbons

In this paper, textural characterization of an activated carbon derived from carbonized coconut shell char obtained at carbonization temperature of 600 °C for 2 h by CO₂ activation was investigated. The effects of activation temperature, activation time and flow rate of CO₂ on the BET surface area, total volume, micropore volume and yield of activated carbons prepared were evaluated systematically. The results showed that: (i) enhancing activation temperature was favorable to the formation of pores, widening of pores and an increase in mesopores; (ii) increasing activation time was favorable to the formation of micropores and mesopores, and longer activation time would result in collapsing of pores; (iii) increasing flow rate of CO₂ was favorable to the reactions of all active sites and formation of pores, further increasing flow rate of CO₂ would lead carbon to burn out and was unfavorable to the formation of pores. The degree of surface roughness of activated carbon prepared was measured by the fractal dimension which was calculated by FHH (Frenkel-Halsey-Hill) theory. The fractal dimensions of activated carbons prepared were greater than 2.6, indicating the activated carbon samples prepared had very irregular structures, and agreed well with those of average micropore size.     

Analysis of the coupled thermoelastic vibration for axially moving beam

The coupled thermoelstic vibration characteristics of the axially moving beam are investigated. The differential equation of motion of the axially moving beam under the thermoelastic coupling is established based to the equilibrium equation and the thermal conduction equation involving deformation term. The eigenequation is deduced and the dimensionless complex frequencies of the axially moving beam with different boundary conditions under the coupled thermoelastic case are calculated by the differential quadrature method. The curves of the real parts and imaginary parts of the first three-order dimensionless complex frequencies versus the dimensionless axially moving speed are obtained. The effects of the dimensionless coupled thermoelastic factor, the ratio of length to height, the dimensionless moving speed on the stability of the beam are analyzed.     

Incoherently coupled Hermite-Gaussian breather and soliton pairs in strongly nonlocal nonlinear media

We theoretically investigate the propagation of incoherently coupled Hermite-Gaussian breather and soliton pairs in strongly nonlocal nonlinear media. It is found that multipole-mode soliton pairs with arbitrary different orders of Hermite-Gaussian shape can exist when the total power of two beams equals the critical power and the ratio of the beam widths for the Gaussian part is inversely proportional to the square root of the ratio of the wave numbers. When the total power does not equal the critical power, the Hermite-Gaussian breather pair exists and their beam widths evolve analogously. For general cases where the ratio of the beam widths is arbitrary, soliton-breather pairs or breather-breather pairs can be formed and their beam widths evolve synchronously in-phase or out-of-phase. Numerical simulations directly based on the nonlocal nonlinear Schrödinger equation are conducted for comparison with our theoretical predictions. The numerical stability analysis shows the higher-order Hermite-Gaussian solitons can not be stable for small nonlocality or for some media like liquid crystals.