米散射理论在新型导光板中的应用

根据米散射理论,提出了新型导光板的设计思路,计算并分析了对于一定波长的入射光,不同粒径的微粒的散射特性。总结了随着微粒粒径的变化,散射效率、消光效率与背向散射效率的变化规律,分析了散射过程中的偏振度随粒子粒径几散射角变化的情况,同时模拟计算了多个微粒对同一波长的入射光经过多次散射后的概率统计结果。     

初始模型对含噪动态光散射数据正则化反演结果的影响

分别采用最小模型矩阵、最平坦模型矩阵、最光滑模型矩阵作为初始化模型,对加入5种不同水平随机噪声的90 nm窄单峰、90 nm宽单峰和250 nm窄单峰、250 nm宽单峰颗粒体系的模拟分布进行了正则化反演,并对反演结果进行比较。结果表明：当噪声水平为0时,正则化初始模型的选择对反演结果没有明显影响。随着噪声水平的增加,采用三种初始化模型反演得到的峰值误差和粒度分布误差都随之变大,但采用最平坦模型和最光滑模型反演得到的峰值和粒度分布误差明显小于采用最小初始模型的反演误差。当噪声水平大于0.01时,选择最平坦初始模型获得的粒度分布结果优于采用最光滑初始模型和最小初始模型获得的结果,而采用最光滑初始模型反演得到的峰值优于最平坦初始模型和最小初始模型的反演峰值。因此,采用正则化算法处理含噪动态光散射数据时,为得到最优的粒度分布信息,宜采用最平坦初始模型,若需要获取最准确的峰值信息,则应选择最光滑初始模型。     

菲涅耳深区散斑强度统计特性及演化

利用直透光波和高斯散斑场的叠加理论和基尔霍夫近似研究了菲涅耳深区散斑的构成,给出了菲涅耳深区散斑场及其强度概率密度和对比度的表达式.利用原子力显微镜测量的随机散射表面高度分布数据模拟菲涅耳深区不同散射距离处散斑,并计算绘出其强度概率密度和对比度曲线.理论与模拟相结合研究这两个统计函数的特征和直透光强所占比例的影响,以及它们随散射距离的演化规律.     

Full utilization of a mass spectrometer using on-demand sharing with multiple LC units

The applicability of liquid chromatography-mass spectrometry (LC/MS) is often limited by throughput. The sharing of a mass spectrometer with multiple LCs significantly improves throughput; however, the reported systems have not been designed to fully utilize the MS duty cycle, and as a result to achieve maximum throughput. To fully utilize the mass spectrometer, the number of LC units that a MS will need to recruit is application dependent and could be significantly larger than the current commercial or published implementations. For the example of a single analyte, the number may approach the peak capacity to a first degree approximation. Here, the construction of a MS system that flexibly recruits any number of LC units demanded by the application is discussed, followed by the method to port a previously developed LC/MS method to the system to fully utilize a mass spectrometer. To demonstrate the performance and operation, a prototypical MS system of eight LC units was constructed. When 1-min chromatographic separations were performed in parallel on the eight LCs of the system, the average LC/MS analysis time per sample was 10.5 s when applied to the analysis of samples in 384-well plate format. This system has been successfully used to conduct large-volume biochemical assays with the analysis of a variety of molecular entities in support of drug discovery efforts. Allowing the recruitment of the number of LC units appropriate for a given application, this system has the potential to be a plug-and-play system to fully utilize a mass spectrometer. Copyright ? 2012 John Wiley & Sons, Ltd.     

Parasitic bipolar amplification in a single event transient and its temperature dependence

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.     

光学渡越辐射测量中能量分辨精度分析

 基于光学渡越辐射原理的用于高能强流电子束束流参数在线测量及诊断系统,具有时间响应快、分辨率高等特点,可以测量电子束的束剖面、发散角、能量等多个参数。分析了测量系统的结构参数（包括了透镜的焦距、成像面位置、CCD像元尺寸）对电子束能量测量精度的影响,并在理论上模拟了电子束的发散角的影响。还根据系统数据的特点,阐述了数据噪声对能量测量结果精度的影响,指出了光学渡越辐射测量中电子束能量分辨精度受到多种因素的影响,需要在数据处理时考虑修正。     

具有时间分辨能力的强流电子束束剖面测量系统

 高能强流电子束的束参数测量是加速器研制过程中重要的一项测量工作,由于光学渡越辐射具有时间响应快、分辨率高等特点而被用于测量电子束的具有时间分辨能力的束剖面、发散角、能量等多个参数;通过电子束束参数的时间分辨测量则能够了解电子束产生、输运中的问题,非常有利于加速器的研究与调试。一种具有时间分辨能力的、利用光学渡越辐射进行高能强流电子束束斑测量的系统在中国工程物理研究院被建立起来,并在12 MeV LIA的电子束束斑的测量中用于电子束传输研究,该系统拍摄图像的间隔时间最小为10 ns,最小的曝光时间为3 ns,具有一次可以拍摄8幅图像的能力,并获得了12 MeV LIA约100 ns内相应的时间分辨的束斑变化情况,观察到了一些过去未观察到的现象,为加速器的研究提供了又一个新测试方法。     

Neutron halos in the excited states for N=127 isotones

Properties of the ground states and the excited states of N=127 isotones are investigated by using the nonlinear relativistic mean field theory with the interactions PK1. By analyzing the rms of proton and neutron, the single particle energies of valence nucleon and the density distributions of neutron, proton and the last neutron, it can be found that there exists a neutron halo in the excited states of 3d5/2, 4s1/2 and 3d3/2 in 209Pb. It is also predicted that there exists a neutron halo in the excited states of 3d5/2, 4s1/2 and 3d3/2 in 207Hg, 208Tl, 210Bi and 211Po.     

Eu3+-site occupation in CaTiO3 perovskite material at low temperature

In order to clarify the site occupancy of rare-earth ions in rare-earth doped perovskite materials, the un-doped pure CaTiO₃ and Eu³⁺-doped CaTiO₃ samples with a series of Ca/Ti ratio were synthesized via high-temperature solid-state reaction method. X-ray diffraction (XRD) powder patterns confirm that the crystal structure keeps invariant at various Ca/Ti ratios. Measurement results of unit-cell parameters and X-ray photoelectron spectroscopy (XPS) indicate that Eu³⁺ ions enter into the Ca²⁺ site. The high-resolution photoluminescence spectra of Eu³⁺ ions at 20 K in all samples did not witness a significant change under the excitation at different wavelength, implying that Eu³⁺ ions occupy only one type of site. Considering the small spectral splitting range of ⁵D₀ → ⁷F₂ transition and the large intensity ratio of ⁵D₀ → ⁷F₂/⁵D₀ → ⁷F₁, it can be concluded that Eu³⁺ occupies Ca²⁺ site with larger coordinate numbers rather than Ti⁴⁺ site.     

Removal of oxygen from silicon by electron beam melting

Small amounts of multicrystalline silicon were melted in an electron beam furnace in different experimental conditions in order to investigate the oxygen evaporation behavior during the electron beam melting (EBM) process. The oxygen content level before and after EBM was determined by secondary ion mass spectroscopy. The oxygen content was reduced from 6.177 to 1.629 ppmw when silicon was melted completely at 15 kW with removal efficiency up to 73.6 %. After that, it decreased continually to <0.0517 ppmw when the refining time exceeded 600 s with a removal efficiency of more than 99.08 %. During the melting process, the evaporation rate of silicon is 1.10 × 10^?5 kg/s. The loss of silicon could be reduced up to 1.7 % during oxygen removal process to a desirable figure, indicating EBM is an effective method to remove oxygen from silicon and decrease the loss of silicon.