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71.
Shuwei Wan Xingming Bian Lan Chen Deming Yu Liming Wang Zhicheng Guan 《Journal of Electrostatics》2013,71(4):778-780
The effect of electrostatic discharge on safe distance determination for 500 kV ac transmission line's helicopter inspection is investigated. Potential difference exists while helicopter is near the power transmission line, which is harmful to the inspection persons. The electric field in the helicopter cabin is calculated when it is near the power line. The result indicates that the potential difference becomes higher with the decrease of the distance between the helicopter and transmission line. Considering the discharge energy and the guarantee of the persons' safety, the safe distance for 500 kV ac transmission lines is determined as d ≥ 15 m. 相似文献
72.
Silicon nitride/silicon oxide interlayers for solar cell passivating contacts based on PECVD amorphous silicon 下载免费PDF全文
This Letter demonstrates improved passivating contacts for silicon solar cells consisting of doped silicon films together with tunnelling dielectric layers. An improvement is demonstrated by replacing the commonly used silicon oxide interfacial layer with a silicon nitride/silicon oxide double interfacial layer. The paper describes the optimization of such contacts, including doping of a PECVD intrinsic a‐Si:H film by means of a thermal POCl3 diffusion process and an exploration of the effect of the refractive index of the SiNx. The n+ silicon passivating contact with SiNx /SiOx double layer achieves a better result than a single SiNx or SiOx layer, giving a recombination current parameter of ~7 fA/cm2 and a contact resistivity of ~0.005 Ω cm2, respectively. These self‐passivating electron‐selective contacts open the way to high efficiency silicon solar cells. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
73.
Degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress 下载免费PDF全文
Direct current (DC) reverse step voltage stress is applied on the gate of AlGaN/GaN high-electron mobility transistor (HEMT). Experiments show that parameters degenerate under stress. Large-signal parasitic source/drain resistance (RS/RD) and gate-source forward I-V characteristics are recoverable after breakdown of the device under test (DUT). Electrons trapped by both the AlGaN barrier trap and the surface state under stress lead to this phenomenon, and surface state recovery is the major reason for the recovery of device parameters. 相似文献
74.
Although LiFePO4/C has been successfully put into practical use in lithium-ion batteries equipped on new energy vehicles, its unsatisfactory low temperature results in poor low performance of lithium-ion batteries, leading to a much smaller continue voyage course at extreme environments with low temperature for electric vehicles. In this paper, the electrochemical performance of the LiFePO4/C prepared by polyol route was investigated at a temperature range from 25 to ?20 °C. Compared to commercial ones, as-prepared LiFePO4/C shows a much better low-temperature performance with a reversible capacity of 30 mA h g?1 even at 5 C under ?20 °C and a capacity retention of 91.1 % after 100 cycles at 0.1 C under 0 °C. Moreover, high-resolution transmission electron microscopy (HRTEM) revealed that this outstanding performance at low temperatures could be assigned to uniform carbon coating and the nano-sized particles with a highly crystalline structure. 相似文献
75.
Guan-Yeow Yeap Elango Hrishikesan Yi-Huan Chan Wan Ahmad Kamil Mahmood 《Journal of fluorescence》2017,27(1):105-110
A new chalcone-based probe containing coumarin and naphthol at both ends has been synthesized via aldol condensation. The uniqueness of the newly derived probe can be ascribed to the presence of naphthol and coumarin units acting as binding site and signaling element, respectively. The fluorogenic behaviors toward various anions were investigated. The probe was characterized by various spectroscopic techniques and the in-depth study led to show excellent selectivity and sensitivity for fluoride ions. The hydrogen bonding thus formed with fluoride anion provides remarkable fluorometric responses. The interactions of the probe with fluoride ions were determined by fluorescence, FT-IR and NMR spectroscopic techniques. The exploratory studies by fluorescent spectral changes augur well for the naked-eye sensing applications. 相似文献
76.
用斜坡电压法(Voltage Ramp, V-ramp)评价了0.18μm双栅极 CMOS工艺栅极氧化膜击穿电量(Charge to Breakdown, Qbd)和击穿电压(Voltage to Breakdown, Vbd). 研究结果表明,低压器件(1.8V)的栅极氧化膜(薄氧)p型衬底MOS电容和N型衬底电容的击穿电量值相差较小,而高压器件(3.3V)栅极氧化膜(厚氧)p衬底MOS电容和n衬底MOS电容的击穿电量值相差较大,击穿电压测试值也发现与击穿电量
关键词:
薄氧
可靠性
击穿电压
击穿电量 相似文献
77.
通过对非线性镜锁模激光器的稳态分析,找到了它的锁模条件及锁模脉冲的强度极限,为该激光器输出高功率的短脉冲提供了理论依据。 相似文献
78.
79.
80.
Tomographic analysis of the central magnetohydrodynamic oscillations on the HT-7 tokamak 总被引:1,自引:0,他引:1 下载免费PDF全文
Multi-channel soft x-ray (SX) detectors are applied to generate images of
magnetohydrodynamic (MHD) oscillation on the HT-7 tokamak, and the data
from SX cameras are analysed by using the
Fourier--Bessel harmonic reconstruction method and the singular value
decomposition. The image
reconstruction of SX emissivity is obtained on the assumption of plasma
rigid rotation. One of the important phenomena in the HT-7 discharge is the
transition from the sawtooth oscillations to the MHD oscillations when the
plasma density grows higher. The MHD structure
observed in the SX tomography is featured as follows: the magnetic surface of MHD
structure is made up of the crescent-shaped ``hot core' and the circular
``cold bubble'. The structure of the magnetic surface is relatively stable.
It rotates in the direction of the electron diamagnetic drift at a
frequency being the oscillation frequency of the MHD oscillations. 相似文献