计算机控制光学表面成形中大规模驻留时间求解

采用基于稀疏矩阵的大规模非负最小二乘法,对大口径、微浮雕结构光学元件加工中的驻留时间进行了分析与求解,并对该算法开展了正则化研究。仿真结果表明:与传统非负最小二乘法相比,基于稀疏矩阵的大规模非负最小二乘法精度高、效率快。采用该算法仿真加工平均振幅为1.177 6倍波长的大口径、微浮雕结构光学元件,误差面形均方根收敛至0.067倍波长。     

Frequency-stabilized semimonolithic frequency doubler with high output power

We present a semimonolithic frequency-doubler from 1080 to 540 nm with 80% doubling efficiency and up to 849-mW output power of green light.     

利用不完全自锁模激光研究C60的反饱和吸收效应

本文报道首次采用色心晶体的不完全自锁模激光（１０６４ｎｍ）对Ｃ６０分子反饱和吸收效应的研究，实验结果与采用平均过程的研究方法是一致的，文中还讨论了Ｃ６０分子反饱和吸收效应产生的原因。     

Nodal Type Bound States for Nonlinear Schrödinger Equations with Decaying Potentials

In this paper, we are concerned with the existence of nodal type bound state for the following stationary nonlinear Schrödinger equation $$-Δu(x)+V(x)u(x)=|u|^{p-1}u, x∈ R^N, N ≥ 3,$$ where 1 < p < (N+2)/(N-2) and the potential V(x) is a positive radial function and may decay to zero at infinity. Under appropriate assumptions on the decay rate of V(x), Souplet and Zhang [1] proved the above equation has a positive bound state. In this paper, we construct a nodal solution with precisely two nodal domains and prove that the above equation has a nodal type bound state under the same conditions on V(x) as in [1].     

Determining the resistance of X-pinch plasma

The current and the voltage of an X-pinch were measured. The inductance of the X-pinch was assumed to be a constant and estimated by the calculation of the magnetic field based on the well-known Biot-Savart's Law. The voltage of the inductance was calculated with L · di/dt and subtracted from the measured voltage of the X-pinch. Then, the resistance of the X-pinch was determined and the following results were obtained. At the start of the current flow the resistance of the exploding wires is several tens of Ohms, one order of magnitude, higher than the metallic resistance of the wires at room temperature, and then it falls quickly to about 1 , which reflects the physical processes occurring in the electrically exploding wires, i.e., a current transition from the highly resistive wire core to the highly conductive plasma. It was shown that the inductive contribution to the voltage of the X-pinch is less than the resistive contribution. For the wires we used, the wires' material and diameter have no strong influence on the resistance of the X-pinch, which may be explained by the fact that the current flows through the plasma rather than through the metallic wire itself. As a result, the current is almost equally divided between two parallel X-pinches even though the diameter and material of the wires used for these two X-pinches are significantly different.     

自辐射场下UN2分子的光谱研究

对铀原子和氮原子分别使用相对论有效原子实势和6-311+G(d)基组, 采用优选的密度泛函B3P86方法, 研究了铀本身产生自辐射场(-0.005–0.005 a.u.)作用下UN₂基态分子的能隙E_g和谐振频率ν. 结果表明: UN₂分子在自辐射场中反对称伸缩振动频率ν₃(σ_g)和对称伸缩振动频率σ₁(σ_g)与实验值1051.1 cm^-1和1008.3 cm^-1 基本符合; E_g随自辐射场场强的增大而趋于减少, 占据轨道的电子容易被激发至空轨道而形成激发态; UN₂分子在自辐射场中趋于不稳定, N₂, O₂等更容易扩散到表面内层而腐蚀铀表面, 加剧了铀在自辐射场中的腐蚀.     

外力驱动作用下高分子链在表面吸附性质的计算机模拟

采用退火法模拟研究受外力F驱动的高分子链在吸引表面的吸附特性.通过高分子链的平均表面接触数〈M〉与温度T之间的关系计算临界吸附温度T_c,并发现T_c随着F的增加而减小;进而通过高分子链的均方回转半径分析外力驱动作用对高分子链构象的影响,并从回转半径极小值或者垂直外力方向的y和z分量的变化交叉校验临界吸附点T_c.模拟计算了处于吸附状态的高分子链随着外力F的增加是否会发生吸附状态到脱附状态的相变以及发生相变所需施加的外力是否由温度所决定.模拟结果表明:两种不同温度下高分子链的吸附性质和构象性质受外力驱动作用而产生不同现象,在温度区间T*_cTT_c时会发生脱附现象,而在TT*_c时不会发生脱附现象.     

高速高饱和单行载流子光探测器的设计与分析

设计了一种In P基的背入射台面结构的单行载流子光探测器.通过在吸收层中采取高斯型掺杂界面及引入合适厚度和掺杂浓度的崖层,使得光探测器同时具备了高速和高饱和电流特性.理论分析表明,在光敏面为14μm2、反向偏压为2 V条件下,该器件的3 d B带宽可达58 GHz,直流饱和电流高达158 m A.在大功率光注入条件下,详细分析了光探测器带宽降低和电流饱和现象,得出能带偏移和电场坍塌是其根本原因的结论.     

TR4终端高性能探测器系统

描述了兰州中能重离子加速器TR4终端装备的高性能探测器系统的结构性能.各类探测器都达到了很好的性能指标.Si多叠层望远镜,Z/△Z～50,△E/E～0.3%.IC+PSD+SPD+CsI(T1)对数密度望远镜,Z/△Z～44.5,△x～1.7mm.棉球面反射镜结构开始时间探测器装置,△t～140Ps.重离子飞行时间谱仪,A/△A～86,Z/△Z～48,△E/E～0.78%,△t～286ps.9单元和36单元CsI(T1)轻粒子小角度关联探测器阵列,Si+CsI(T1)轻粒子望远镜也达到了很好的性能指标.简述了小角度关联等实验结果.