一氧化碳的太赫兹时域光谱研究

以飞秒激光为基础的太赫兹时域光谱技术是一种新型的相干远红外光谱测量技术。文章首次利用太赫兹时域光谱技术测量了一氧化碳气体在0.2～2.5太赫兹频谱范围内的吸收光谱。实验结果表明,一氧化碳在此波段有明显的特征吸收峰,峰值位置与理论计算得到的结果有很好的一致性。随着压强的减小,吸收峰变尖锐。研究一氧化碳的太赫兹吸收光谱特性,对于快速、准确检测环境中有害气体以及排除安全隐患具有重要意义。     

两种铽配合物与PVK混合体系的发光机理研究

研究了稀土配合物Tb(p-MBA)₃phen(样品Ⅰ)和Tb(p-ClBA)₃phen(样品Ⅱ)与导电聚合物材料PVK掺杂体系的光致发光和电致发光特性。发现在样品Ⅰ与PVK混合薄膜的光致发光中,除了三价铽离子的发光外,还能看到明显的PVK的发光;而在电致发光中,PVK的发光完全被抑制,只能看到Tb3+的绿光发射。对样品Ⅱ与PVK的混合发光层,无论其光致发光谱还是电致发光谱,都没有看到410 nm处PVK的发射。进一步测量两种材料的激发光谱,初步探讨了器件的发光机理。样品Ⅰ的发光可能来源于两个方面,一是PVK到稀土配合物的不完全的能量传递,二是由于载流子俘获机理;样品Ⅱ的发光则是由于PVK到稀土配合物的完全的能量传递。     

NaGd(WO 4)2∶Yb^3+,Ho^3+,Cr^3+微米晶的上转换发光与温度特性

采用水热法制备了NaGd(WO4)2(NGW)∶Yb^3+,Ho^3+,Cr^3+微米晶。研究了Cr^3+离子掺杂浓度对样品的晶体结构、微观形貌、上转换发光及温度传感特性的影响。在980 nm激光激发下,所有样品均发射以546 nm为中心的较弱绿光和以660 nm为中心的强红光,分别对应于Ho^3+离子的5F4,5S2→5I8和5F5→5I8能级跃迁。随Cr^3+离子掺杂量增加,绿光发射峰强度逐渐减弱,而红光发射先增大后减小,在10%时达到最大,样品色坐标逐渐向红色区域偏移。样品的变温光谱表明,NGW∶Yb^3+,Ho^3+,10%Cr^3+微米晶具有很好的温度特性,其测温灵敏度在486 K时达到最大,约为0.0337 K^-1,比NGW∶Yb^3+,Ho^3+的灵敏度提高近1倍。     

甲基环己烷在9∽15.5 eV能量区的真空紫外光电离研究

利用具有同步辐射源的反射式飞行时间质谱仪,研究甲基环己烷的真空紫外光电离和光解离. 观测到母体离子C₇H₁₄⁺和碎片离子C₇H₁₃⁺,C₆H₁₁⁺,C₆H₁₀⁺,C₅H₁₀⁺,C₅H₉⁺,C₄H₈⁺,C₄H₇⁺和C₃H₅⁺的光电离效率曲线. 测定甲基环己烷的电离能为9.80±0.03 eV,通过光电离效率曲线确定其碎片离子的出现势. 在B3LYP/6-31G(d)水平上对过渡态、中间体和产物离子的优化结构进行表征,并使用G3B3方法计算其能量. 提出主要碎片离子的形成通道. 分子内氢迁移和碳开环是甲基环己烷裂解途径中最重要的过程.     

暗怪波的相互作用

以耦合非线性薛定谔方程为理论模型,数值研究了两个一阶暗怪波在正常色散单模光纤中的相互作用.基于一阶暗怪波精确解,采用分步傅里叶数值模拟法,从间距、相位差和振幅系数比方面讨论相邻两个一阶暗怪波之间的相互作用.基于二阶暗怪波精确解,讨论了两个一阶暗怪波的非线性相互作用.研究结果表明:同相位情况下,间距参数T1为0、5、20时,相邻两个一阶暗怪波相互作用激发产生“扭结型”暗怪波.相比较于单个暗怪波发生能量的弥散,“扭结型”暗怪波分裂形成多个次暗怪波.反相位情况下,间距参数T1为2、7、12时,相邻两个一阶暗怪波相互作用也可以激发产生“扭结型”暗怪波.并且“扭结型”暗怪波初始激发的空间位置偏离原始单个暗怪波的位置5.振幅系数比越大,该空间位置越接近5.二阶暗怪波可以看作是两个一阶暗怪波的非线性叠加,复合型和三组分型二阶暗怪波与相邻两个一阶暗怪波的相互作用略有相似.     

Investigation of active-region doping on InAs/GaSb long wave infrared detectors

The eight-band κ·p model is used to establish the energy band structure model of the type-II InAs/GaSb superlattice detectors with a cut-off wavelength of 10.5μm,and the best composition of M-structure in this type of device is calculated theoretically.In addition,we have also experimented on the devices designed with the best performance to investigate the effect of the active region p-type doping temperature on the quantum efficiency of the device.The results show that the modest active region doping temperature(Be:760℃)can improve the quantum efficiency of the device with the best performance,while excessive doping(Be:>760℃)is not conducive to improving the photo response.With the best designed structure and an appropriate doping concentration,a maximum quantum efficiency of 45% is achieved with a resistance-area product of 688?·cm^2,corresponding to a maximum detectivity of 7.35×10^11cm·Hz^1/2/W.     

Astrocyte and ions metabolism during epileptogenesis:A review for modeling studies

As a large group of cells in a central nervous system, astrocytes have a great influence on ion and energy metabolism in a nervous system. Disorders of neuronal ion and energy metabolism caused by impaired astrocytes play a key role in the pathogenesis of epilepsy. This paper reviews the existing computational models of epileptogenesis resulting from impaired astrocytes and presents several open perspectives with regard to ion and energy metabolism-induced epileptogenesis in a neuron-astrocyte-capillary coupled model.     

Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers

Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iV_oc of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.     

Neural network representations of quantum many-body states

Machine learning is currently the most active interdisciplinary field having numerous applications;additionally,machine-learning techniques are used to research quantum many-body problems.In this study,we first propose neural network quantum states(NNQSs)with general input observables and explore a few related properties,such as the tensor product and local unitary operation.Second,we determine the necessary and sufficient conditions for the representability of a general graph state using normalized NNQS.Finally,to quantify the approximation degree of a given pure state,we define the best approximation degree using normalized NNQSs.Furthermore,we observe that some 7V-qubit states can be represented by a normalized NNQS,such as separable pure states,Bell states and GHZ states.