Gas source MBE grown wavelength extended 2.2 and 2.5 μm InGaAs PIN photodetectors

Using homo-junction structure and relative thin linear graded In_xGa_1−xAs as the buffer layer, extended wavelength InGaAs PIN photodetectors with cut-off wavelength of 2.2 and 2.5 μm at room temperature have been grown by using GSMBE, and their performance over a wide temperature range have been extensively investigated. For those 2.2 or 2.5 μm detectors with 100 μm diameter, the typical dark current (V_R = 10 mV) and R₀A are 57 nA/10.3 Ω cm² or 67 nA/12.7 Ω cm² at 290 K, and 84 pA/4.70 kΩ cm² or 161 pA/3.12 kΩ cm² at 210 K respectively. The thermal activation energies of the dark current are 0.447 eV or 0.404 eV for 2.2 or 2.5 μm detectors respectively.     

Growth and characterization of model oxide catalysts

Oxide catalysts are frequently used to convert toxic species to environmentally benign molecules, and to prevent the formation of toxic species in the first place. In this paper, growth and characterization of model oxide systems employed in both approaches is discussed. An example of the former approach is the selective catalytic reduction (SCR) of NO emitted from power plants by NH₃, which employs tungsten and vanadium oxides supported on the anatase polymorph of TiO₂. To model SCR catalysts, epitaxial titanium, vanadium and tungsten oxide films were grown using molecular beam epitaxy and magnetron sputtering. Two different anatase orientations were grown on LaAlO₃ substrates and their interactions with vanadia were characterized. On LaAlO₃ (0 0 1), anatase exposed a (4 × 1) reconstructed (0 0 1) surface. Vanadia lifted the reconstruction and at 1 ML a (1 × 1) surface with mostly V⁵⁺ was observed. Continued V₂O₅ growth led to loss of order, but at high temperatures epitaxial VO₂ could be grown; vanadia behaved similarly on anatase films on LaAlO₃ (1 1 0). Results suggested that the monolayer is pseudomorphic with O adsorption oxidizing the surface V to 5+, since the anatase structure cannot accommodate more bulk oxygen, only a monolayer can be pseudomorphic and have only V⁵⁺. Thus the vanadia monolayer has unique structural and chemical properties that can help explain why vanadia monolayers on TiO₂ are much more active than bulk V₂O₅. For WO₃, a series of added row reconstructions were observed as the epitaxial films were reduced. The effect of these structures on surface chemistry was characterized by studying 1-propanol adsorption. The results indicated that the structure of the WO₃ surface did not alter its catalytic function but had a strong effect on reaction kinetics. As an example of a system where catalysts prevent the formation of toxic species, the reactivity of oxidized Pd surfaces used in CH₄ catalytic combustion were studied. An ordered PdO-like monolayer was found to be less reactive towards CO than adsorbed O on Pd. On the other hand, the PdO layer favored a lower activation energy C₃H₆ oxidation pathway. The results indicated that Pd oxidation reduces the sticking coefficient of reactive species but once molecules adsorb, the oxide surface can reduce the activation energy for subsequent reaction.     

Medium-range structural order in liquid Ni20Al80 alloy: Experimental and molecular dynamics studies

In this Letter, structural properties of liquid Ni₂₀Al₈₀ have been studied through molecular dynamics (MD) simulations, and results agree well with X-ray experiments. The prepeak in the structure factor manifests the existence of medium-range structural order (MRSO) in liquid Ni₂₀Al₈₀. Analyses in MRSO reveal the dominance of ideal icosahedra and defective icosahedra which, furthermore, form clusters and share common atoms.     

Quantum Tunneling of Massive Particles from a Garfinkle-Horowitz-Strominger Dilatonic Black Hole

Hawking radiation is viewed as a process of quantum tunneling. The massive particles‘ tunneling from Garfinkle-Horowitz-Strominger black hole is investigated. Using Jingyi Zhang‘s de Broglie wave method, we get the unthermal spectrum, and the result is consistent with the underlying unitary theory.     

C2(×)Cn量子系统的最大纠缠混合态

讨论了C2(×)Cn量子系统的最大纠缠混合态,得到了Negativity纠缠度下的最大纠缠混合态的解析结果,并计算了该态在非满秩情形下的量子相对熵纠缠度.     

TiN/Al2O3纳米多层膜的共格外延生长及超硬效应

采用多靶磁控溅射法制备了一系列具有不同Al2O3调制层厚度的TiN/Al2O3纳米多层膜.利用X射线能量色散谱、X射线衍射、扫描电子显微镜、高分辨透射电子显微镜和微力学探针表征了多层膜的成分、微结构和力学性能.研究结果表明,在TiN/Al2O3纳米多层膜中,单层膜时以非晶态存在的Al2O3层在厚度小于1.5 nm时因TiN晶体层的模板效应而晶化,并与TiN层形成共格外延生长,相应地,多层膜产生硬度明显升高的超硬效应,最高硬度可达37.9 GPa.进一步增加多层膜中Al2O3调制层的层厚度,Al2O3层逐渐形成非晶结构并破坏了多层膜的共格外延生长,使得多层膜的硬度逐步降低.     

掺入Ni元素的LiCoO2晶体光谱结构及电子顺磁共振g因子

在弱场图像下,利用Racah不可约张量算符方法得到了三角对称3d4/3d6电子组态的210阶可完全对角化的微扰哈密顿矩阵、最近邻点电荷模型晶体结构常量公式和电子顺磁共振g因子公式.研究了LiCoO2晶体和掺入Ni的LiCoO2:Ni晶体中Co3+的基态能级、晶体结构和电子顺磁共振g因子.考虑了LiCoO2晶体和LiCoO2:Ni晶体中自旋单重态和三重态对Co3+基态能级的影响,讨论了LiCoO2晶体和在LiCoO2晶体中掺杂Ni后Co3+局域结构常量大小的变化是引起Co3+的基态能级变化的主要原因,理论和实验都证实了这一点.还计算了掺杂前后的电子顺磁共振g因子,计算结果与实验值符合得较好.     

Au/SiO2纳米复合薄膜的微结构及光吸收特性研究

用多靶磁控溅射技术制备了Au/SiO2纳米多层薄膜.利用透射电子显微镜以及吸收光谱对Au/SiO2复合薄膜的微观结构、表面形貌及光学性能进行了表征和测试.研究结果表明:单层Au/SiO2薄膜中Au沉积时间小于10s时,分散在SiO2中的Au颗粒随Au的沉积时间的延长而增大;当沉积时间超过10s后,Au颗粒的尺寸几乎不随沉积时间变化,但Au颗粒的形状由网络状结构变为薄膜状结构.[Au(t1)SiO2(600)]×5多层薄膜在540-560nm波长附近有明显的表面等离子共振吸收峰,且吸收峰的强度随Au的沉积时间增加而增强.基于修正后的Maxwell-Garnett (M-G)有效媒质理论,讨论了金属颗粒的形状对等离子共振吸收峰的峰位和强度的影响.模拟的吸收光谱与实验吸收光谱形状、趋势及吸收峰位相符合.     

水雾化制备Fe74Al4Sn2P10C2B4Si4非晶合金粉末及其磁粉芯性能研究

采用水雾化方法制备Fe7Al4Sn2P10C2B4Si4合金粉末,研究发现该合金具有强的非晶形成能力和高热稳定性,在粉末粒度小于400目时可以形成非晶态合金.采用该非晶粉末制备的磁粉芯在高频下品质因数显著高于MPP粉芯,说明该磁粉芯高频损耗较低.分析表明,非晶合金磁粉芯高频下损耗低的主要原因是电阻率较高.     

Au/SiO2纳米多层薄膜的制备及其性质表征

利用多靶磁控溅射技术制备了Au/SiO2纳米颗粒分散氧化物多层复合薄膜.研究了在保持Au单层颗粒膜沉积时间一定时薄膜厚度一定、变化SiO2的沉积时间及SiO2的沉积时间一定而改变薄膜厚度时,多层薄膜在薄膜厚度方向的微观结构对吸收光谱的影响.研究结果表明:具有纳米层状结构的Au/SiO2多层薄膜在560nm波长附近有明显的表面等离子共振吸收峰,吸收峰的强度随Au颗粒的浓度增加而增强,在Au颗粒浓度相同的情况下,复合薄膜光学吸收强度随薄膜厚度的增加而增强.但当金属颗粒的浓度增加到一定程度时,金属颗粒相互接触,没有观察到纳米层状结构,薄膜不显示共振吸收峰特征.用修正后的M-G(Maxwell-Garnett)理论对吸收光谱进行了模拟,得到了与实验一致的结果.