数字束流位置探测器通道自动增益校准方法的研究与实现

在现有硬件基础上,基于BPM测量准确度的需求,在自制的电子学FPGA芯片内,通过Verilog语言实现了一种数字BPM采样数据增益自动校准的设计。首先介绍了自动增益校准模块的系统总体设计;然后对模块的实现方法做了详细说明,设计并搭建了ADC数据自动增益校准测试平台以验证自动增益较准模块的功能;最后介绍了该设计在BPM通道标定中的应用。实验结果表明,该方法可以实现4通道增益一致,使ADC采样后的数据幅度相同,有效解决了由通道增益不一致引起的测量偏差,以及工程应用中ADC数据幅度校准工作量大且难于操作的问题,将在BPM系统通道自动标定中发挥重要作用。     

基于维纳滤波的同轴电缆脉冲信号传输畸变补偿研究

由于同轴电缆的低通传输特性,脉冲信号在同轴电缆中传输时不可避免地会出现畸变,并且畸变程度会随着脉冲信号频率、带宽以及传输距离的增加而增大。创新性地将图像处理领域中的一种图像复原方法——维纳滤波法应用于脉冲信号同轴电缆传输畸变补偿,仅利用同轴电缆的S参数和输出信号即可完成输入信号的重构。并以10 m同轴电缆为对象,采用该方法分别对双指数脉冲信号、高斯调制脉冲信号、调制方波信号进行传输畸变补偿。结果表明：对于不同样式的信号,该方法均具有优异的补偿性能;并且,与工程上常用的衰减补偿法相比,该方法不仅补偿精度高,还具有高的计算效率,在同轴电缆脉冲信号传输畸变补偿中具有很好的实用价值。     

Universality of entropy principle for a general diffeomorphism-covariant purely gravitational theory

Thermodynamics plays an important role in gravitational theories. It is a principle that is independent of gravitational dynamics, and there is still no rigorous proof to show that it is consistent with the dynamical principle. We consider a self-gravitating perfect fluid system with the general diffeomorphism-covariant purely gravitational theory. Based on the Noether charge method proposed by Iyer and Wald, considering static off/on-shell variational configurations, which satisfy the gravitational constraint equation, we rigorously prove that the extrema of the total entropy of a perfect fluid inside a compact region for a fixed total particle number demands that the static configuration is an on-shell solution after we introduce some appropriate boundary conditions, i.e., it also satisfies the spatial gravitational equations. This means that the entropy principle of the fluid stores the same information as the gravitational equation in a static configuration. Our proof is universal and holds for any diffeomorphism-covariant purely gravitational theories, such as Einstein gravity, \begin{document}$ f(R)$\end{document} gravity, Lovelock gravity, f(Gauss-Bonnet) gravity and Einstein-Weyl gravity. Our result indicates the consistency between ordinary thermodynamics and gravitational dynamics.     

金属磁记忆效应的第一性原理计算与实验研究

为研究铁磁材料应力集中区域金属磁记忆信号的产生机理及其变化规律, 采用基于密度泛函理论的第一性原理平面波赝势法, 建立了磁记忆效应的磁力学模型; 计算分析了力与磁记忆自发漏磁信号的定量变化关系. 研究结果表明:力作用导致晶格畸变是磁记忆自发漏磁信号产生的根本原因; 常温下, 磁记忆信号随应力近似线性变化的规律与X70钢管水压爆破实验结果具有很好的一致性. 研究结果有助于金属磁记忆检测机理的研究. 关键词： 金属磁记忆 第一性原理 漏磁信号     

两相流有限穿越可视图演化动力学研究

针对小管径两相流流动特性, 全新优化设计弧形对壁式电导传感器. 通过动态实验在获取传感器测量信号的基础上, 采用有限穿越可视图理论构建对应于不同流型的两相流复杂网络. 通过分析发现, 有限穿越可视图网络异速生长指数和网络平均度值的联合分布可实现对小管径两相流的流型辨识; 有限穿越可视图度分布曲线峰值可有效刻画与泡径大小分布相关的流动物理结构细节特征; 网络平均度值可表征流动结构的宏观特性; 网络异速生长指数对流体动力学复杂性十分敏感, 可揭示不同流型演化过程中的细节演化动力学特性. 两相流测量信号的有限穿越可视图分析为揭示两相流流型的形成及演化动力学机理提供了新途径. 关键词： 两相流 复杂网络 有限穿越可视图 网络异速生长指数     

不同衬底和CdCl2退火对磁控溅射CdS薄膜性能的影响

在科宁7059玻璃, FTO, ITO, AZO四种衬底上磁控溅射CdS薄膜, 并在CdCl₂+干燥空气380 ℃退火, 分别研究了不同衬底和退火工艺对CdS薄膜形貌、结构和光学性能的影响. 扫描电子显微镜形貌表明: 不同衬底原位溅射CdS薄膜的形貌不同, 退火后相应CdS薄膜的晶粒度和表面粗糙度明显增大. XRD衍射图谱表明: 不同衬底原位溅射和退火CdS薄膜均为六角相和立方相的混相结构, 退火前后科宁7059玻璃, FTO, AZO衬底上CdS薄膜有 H(002)/C(111) 最强衍射峰, ITO衬底原位溅射CdS薄膜没有明显的最强衍射峰, 退火后出现 H(002)/(111) 最强衍射峰. 紫外-可见分光光度计分析表明: AZO, FTO, ITO, 科宁7059玻璃衬底CdS薄膜的可见光平均透过率依次减小, 退火后相应衬底CdS薄膜的可见光平均透过率增大, 光学吸收系数降低; 退火显著增大了不同衬底CdS薄膜的光学带隙. 分析得出: 上述结果是由于不同衬底类型和退火工艺对CdS多晶薄膜的形貌、结构和带尾态掺杂浓度改变的结果. 关键词： CdS薄膜 磁控溅射 退火再结晶 带尾态     

电场诱导氧化石墨烯的极化动力学特性研究

本文通过外加电场改变氧化石墨烯团簇分子的共振能量,利用激光激发氧化石墨烯产生的共振荧光特性测量氧化石墨烯在电场作用下的极化动力学特性. 发现存在外加电场使得荧光共振峰的半高全宽趋于饱和的时间特性,而不同的氧化石墨烯团簇分子的荧光共振峰的暂态特性同时反映了电场对氧化石墨烯产生定向极化和变形极化的动力学特性. 关键词： 氧化石墨烯 团簇分子 电场 极化动力学     

Diode laser measurement of line strengths and air-broadening coefficients of CO2 and CO in the 1.57 μm region for combustion diagnostics

Spectral measurements of two line pairs of CO₂ and CO in the temperature range 300–1000 K at 1.573 µm were performed using a fiber-coupled distributed feedback (DFB) diode laser. The two line pairs can be used in a tunable diode laser (TDL) absorption sensor for simultaneously detecting CO₂ and CO gas in a single scan of the diode laser. The spectral parameters (line strengths, air-broadening coefficients and the temperature exponent n) of the two pairs are presented. The measured data agree well with existing databases (HITRAN 2004 and HITRAN 2008), the discrepancies being less than 5% for most of the probed transitions. Although the HITRAN database is a useful tool for sensor design, we found that laboratory measurements of the spectroscopic data for the line pair selected for high-temperature sensors are necessary for establishing the uncertainty for accurate measurements.     

Synthesis of Fluorinated Graphene Oxide and its Amphiphobic Properties

The richly functionalized basal plane bonded to polar organic moieties makes graphene oxide (GO) innately hydrophilic. Here, a methodology to synthesize fluorinated graphene oxide by oxidizing the basal plane of fluorinated graphite, allowing for tunable hydrophobicity of GO, is reported. Fluorine exists as tertiary alkyl fluorides covalently bonded to graphitic carbons, and using magic‐angle spinning (MAS) ¹³C NMR as a primary tool chemical structures for the two types of synthesized fluorinated graphene oxides (FGOs) with significantly different fluorine contents are proposed. The low surface energy of the C–F bond drastically affects GO's wetting behavior, leading to amphiphobicity in its highly fluorinated form. Ease of solution processing enables the fabrication of inks that are spray‐painted on various porous/non‐porous substrates. These coatings maintain amphiphobicity for solvents with surface tensions down to 59 dyn/cm, thus bypassing existing lithographic means to create similar surfaces. The approach towards fluorinating GO and fabricating graphene‐based surfaces with tunable wettability opens the path towards unique, accessible, carbon‐based amphiphobic coatings.     

Structures,stabilities and electronic properties of boron-doped silicon clusters B3Sin (n=1–17) and their anions

The structures, stabilities and electronic properties of neutral and anionic B₃Si_n (n?=?1–17) clusters have been systemically investigated on the basis of density functional theory at the B3LYP/6-311?+?G(d) level and CALYPSO structure prediction method. The structural searches show that three boron atoms tend to form B₃ triangle encapsulated into Si_n cages with the increasing number of silicon atoms. Most of the lowest energy structures can be derived by using the squashed pentagonal bipyramid structure of B₃Si₄ and B₃Si₄^? as the major building unit. The relative stabilities are studied based on the calculated binding energies, second-order difference of energies and HOMO–LUMO gaps of the lowest energy structures. In addition, Hirshfeld, natural population analysis, Bader approaches and natural electronic configuration are performed to explore the charge transfer. At last, molecular orbital, magnetic properties, IR, Raman and UV–vis spectra are also, respectively, analysed for providing strong support for essential theoretical and experimental research.