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911.
An effective Hamiltonian technique is used to investigate the effect of applying curled electric fields on physical properties of stress-free BiFeO(3) dots being under open-circuit electrical boundary conditions. It is discovered that such fields can lead to a control of not only the magnitude but also the direction of the magnetization. Such control originates from the field-induced transformation or switching of electrical vortices and their couplings with oxygen octahedral tilts and magnetic dipoles. This control involves striking intermediate states and constitutes a novel phenomenon that can be termed a "magnetotoroidic" effect. 相似文献
912.
Luyan Li Yahui Cheng Weihua Wang Shiwei Ren Yitong Yang Xiaoguang Luo Hui Liu 《Solid State Communications》2011,151(21):1583-1587
The ferromagnetic properties of Mn- and Co-doped Cu2O with copper and oxygen vacancies (VCu and VO) are studied by first-principles calculations. The results indicate that Mn-doped Cu2O has an antiferromagnetic state in the near configuration, while it has a ferromagnetic state for the far configuration. On the contrary, Co-doped Cu2O possess a ferromagnetic state regardless of the distance between the two Co atoms. The observed ferromagnetism can be attributed to the 90° ferromagnetic super-exchange mechanism. The presence of VO can enhance the ferromagnetism, whereas VCudepresses it. 相似文献
913.
Real-time holographic recording and an improvement of the response time in ruthenium (Ru)-doped Bi(12)SiO(20) (BSO) crystal at 1064 nm is obtained. Using green light pre-exposure, a significant operation speed of 60 ms is achieved. In addition, the ability for image reconstruction is demonstrated in Ru-doped BSO, supporting further applications as reversible media for real-time image processing at the near-IR spectral range. 相似文献
914.
We have demonstrated super quasi-phase matching (QPM) in a super periodically poled lithium niobate (PPLN), which is composed of multiple ordinary PPLN cells. When super QPM is achieved, the slight phase mismatch in each PPLN cell can be further compensated for, and the relevant second harmonic generation is facilitated greatly. This mechanism provides an insightful means to relieve the limitation imposed by sample fabrication inaccuracy and will open up a promising avenue toward highly efficient nonlinear interactions. 相似文献
915.
916.
Ping Guo Lin ZhengJi Ming Zheng Ruizhi ZhangLuna Yang Zhaoyu Ren 《Applied Surface Science》2011,258(2):705-710
A plane-wave density functional theory (DFT) calculations have been performed to investigate structural and electronic properties of TaSin (n = 1-3, 12) clusters supported by graphene surface. The resulting adsorption structures are described and discussed in terms of stability, bonding, and electron transfer between the cluster and the graphene. The TaSin clusters on graphene surface favor their free-standing ground-state structures. Especially in the cases of the linear TaSi2 and the planar TaSi3, the graphene surface may catalyze the transition of the TaSin clusters from an isomer of lower dimensionality into the ground-state structure. The adsorption site and configuration of TaSin on graphene surface are dominated by the interaction between Ta atom and graphene. Ta atom prefers to adsorb on the hollow site of graphene, and Si atoms tend to locate on the bridge site. Further, the electron transfer is found to proceed from the cluster to the surface for n = 1 and 2, while its direction reverses as n > 2. For the case of TaSi, chemisorption is shown to prevail over physisorption as the dominant mode of surface-adsorbate interaction by charge density analysis. 相似文献
917.
Yan-Huai Ding Ping ZhangHu-Ming Ren Qin ZhuoZhong-Mei Yang Xu JiangYong Jiang 《Applied Surface Science》2011,258(3):1077-1081
Surface adhesion properties are important to various applications of graphene-based materials. Atomic force microscopy is powerful to study the adhesion properties of samples by measuring the forces on the colloidal sphere tip as it approaches and retracts from the surface. In this paper we have measured the adhesion force between the colloid probe and the surface of graphene (graphene oxide) nanosheet. The results revealed that the adhesion force on graphene and graphene oxide surface were 66.3 and 170.6 nN, respectively. It was found the adhesion force was mainly determined by the water meniscus, which was related to the surface contact angle of samples. 相似文献
918.
919.
We carry out a systematic study on the fusion-fission and evaporation residue excitation functions for the reactions of 6,7Li, 9Be, 10,11B + 209Bi and 6,9Li, 9Be + 208Pb, in which the projectiles are loosely bound and have low threshold energies against breakup. The fusion cross sections are calculated by the coupled-channel model. The compound nuclei decay are analyzed with the standard statistical model. The fission and evaporation residue excitation functions are well reproduced by our calculations, proving the validity of the standard statistical model in describing the compound nuclei decay in these characteristic reactions. For the compound nuclei with A=215-220 and Z=86-88, the liquid drop fission barriers need to be scaled by 0.80-1.02 to reproduce the experimental data. And a decreasing trend of the scaling factor with increasing fissionability parameter Z2/(50A) is found. 相似文献
920.
Ying Li Gaoyang Zhao Jian Su Erfeng Shen Yang Ren 《Applied Physics A: Materials Science & Processing》2011,104(4):1069-1073
Top electrode (TE) material on the resistive switching behavior of (TE)/CuO/SnO2:F/Si substrate has been studied. We investigated the switching properties of CuO films deposited by sol-gel process. Two
kinds of top electrode (TE) material on the resistive switching behaviors have been studied. The nonpolar and bipolar resistive
switching phenomenon was observed in CuO thin films with different top electrodes. The filamentary mechanism was used to explain
the two kinds of resistive switching behaviors. For the Pt/CuO/ATO device, it showed the nonpolar resistive switching where
conducting path is formed and disappear due to the oxygen vacancy. For the Cu/CuO/ATO device, the resistance reduction is
due to the existing Cu to form conduction Cu-rich pathways. An opposite bias takes the existing Cu back to the Cu electrode
to its high-resistance state. CuO thin films are also observed by XRD, AFM and XPS. 相似文献