Two-flux composite fermion series of the fractional quantum Hall states in strained Si

Magnetotransport properties are investigated in a high-mobility two-dimensional electron system in the strained Si quantum well of a (100) Si(0.75)Ge(0.25)/Si/Si(0.75)Ge0.25 heterostructure, at temperatures down to 30 mK and in magnetic fields up to 45 T. We observe around nu=1/2 the two-flux composite fermion (CF) series of the fractional quantum Hall effect (FQHE) at nu=2/3, 3/5, 4/7, and at nu=4/9, 2/5, 1/3. Among these FQHE states, the nu=1/3, 4/7, and 4/9 states are seen for the first time in the Si/SiGe system. Interestingly, of the CF series, the 3/5 state is weaker than the nearby 4/7 state and the 3/7 state is conspicuously missing, resembling the observation in the IQHE regime that the nu=3 is weaker than the nearby nu=4 state. Our results can be quantitatively understood in the picture of CF's with the valley degree of freedom.     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.     

Teleportation of an n-bit one-photon and vacuum entangled GHZ cavity-field state

A scheme for teleporting an arbitrary n-bit one-photon and vacuum entangled Greenberger-Horne-Zeilinger （GHZ） state is proposed. In this scheme, the maximum entanglement GHZ state is used as a quantum channel. We find a method of distinguishing four Bell states just by detecting the atomic states three times, which is irrelevant to the qubit number of the state to be teleported.     

Material and device properties of ZnO-based film bulk acoustic resonator for mass sensing applications

Zinc oxide based film bulk acoustic resonator as mass sensor was fabricated by multi-target magnetron sputtering under optimized deposition condition. Each layer of the device was well crystallized and highly textural observed by transmission electron microscopy and X-ray diffraction measurement. Through piezoelectric test, the device vibrated with significant distance. The influence of top electrode on resonant frequency and the bio-specimen of mass loading effect were investigated. Data show that the device has qualified properties as mass biosensor, with a resonant frequency of 3-4 GHz and a high sensitivity of 8-10 kHz cm²/ng.     

Design of a reentrant double staggered ladder circuit for V-band coupled-cavity traveling-wave tube

The reentrant double staggered ladder slow-wave structure is employed in a high-power V-band coupled-cavity traveling-wave tube. This structure has a wide bandwidth, a moderate interaction impedance, and excellent thermal dissipation properties, besides the easy fabrication. A well-matched waveguide coupler is proposed for the structure. Combining the design of attenuators, a full-scale three-dimensional circuit model for the V-band coupled-cavity traveling-wave tube is constructed. The electromagnetic characteristics and the beam--wave interaction of this structure are investigated. The beam current is set to be 100 mA, and the cathode voltage is tuned from 16.8 kV to 15.8 kV. The calculation results show that this tube can produce a saturated average output power over 100 W with an instantaneous bandwidth greater than 1.25 GHz in the frequency ranging from 58 GHz to 62 GHz. The corresponding gain and electronic efficiency can reach over 32 dB and 6.5%, respectively.     

Base‐dependent selectivity of an SNAr reaction

A detailed kinetic analysis and computational study of an S_NAr reaction between 2,5,6‐trifluoronicotinonitrile, 2 , and the ambident 3‐isopropoxy‐1H‐pyrazol‐5‐amine, 3 , is presented. The selectivity with respect to the reaction at the primary amino group of 2 , to give the desired product, 2,5‐difluoro‐6‐[(3‐isopropoxy‐1H‐pyrazol‐5‐yl)amino]nicotinonitrile, 1 , is strongly dependent upon reaction conditions. Reaction is found to proceed via both uncatalysed and base catalysed routes, and selectivity towards 1 is strongly enhanced in the presence of the base diazabicyclo[2,2,2]octane (DABCO). Computational studies in tetrahydrofuran solution at the B3LYP/6‐31G* level of theory have provided valuable insight into alternative kinetically indistinguishable reaction pathways. The results suggest that for reaction at the primary amino group, proton removal by DABCO accompanying amine addition allows avoidance of a high‐energy, zwitterionic Meisenheimer intermediate. Reactions at the alternative pyrazole nitrogen atoms are less sensitive to the presence of base because of stabilisation of the Meisenheimer zwitterions by intramolecular hydrogen bonding. Copyright © 2010 John Wiley & Sons, Ltd.     

基于MARG的无人机抗干扰系统的研究

由IMU或电子罗盘组成的无人机航姿测量系统易受载体有害加速度或周围局部磁场干扰导致姿态角解算不准确。针对该问题提出将自适应扩展卡尔曼滤波算法应用于该系统。在卡尔曼滤波算法中提出引入分段函数构造自适应测量噪声方差阵。相比于传统噪声方差阵的阈值判断方法,该方法提高了传感器信息的利用率,进一步减小了外界干扰对系统姿态估计的影响,最终提高了姿态角的解算精度。最后针对该方法进行了仿真分析和无磁转台实验验证,仿真和实验结果表明,该方法能有效提高无人机航姿测量系统的抗干扰能力,具有一定的应用价值。     

基于光子筛的软X光谱仪

 介绍了采用新型软X光谱学光子筛作为分光元件的软X光谱仪的原理和结构参数设计。新谱仪理论测量范围为100 eV~2 keV,光谱分辨力达0.35 nm。应用该谱仪在SILEX-Ⅰ装置上测量了飞秒激光与固体铜靶相互作用产生的X射线发射谱。实验结果表明,该谱仪主要性能指标达到设计要求,适合于激光与等离子体相互作用产生的软X射线研究。     

采用Al/TaN叠层电极提高Si基Ge PIN光电探测器的性能

金属与Ge材料接触由于存在强烈的费米钉扎效应, 导致金属电极与n型Ge接触引入较大的接触电阻, 限制了Si基Ge探测器响应带宽. 本文报道了在SOI衬底上外延Ge单晶薄膜并制备了不同台面尺度的Ge PIN光电探测器. 对比了电极分别为金属Al和Al/TaN叠层的具有相同器件结构的SOI基Ge PIN光电探测器的暗电流、响应度以及响应带宽等参数. 发现在Al与Ge之间增加一薄层TaN可有效减小n型Ge的接触电阻, 将台面直径为24 μ的探测器在1.55 μ的波 长和-1 V偏压下的3 dB响应带宽提高了4倍. 同时, 器件暗电流减小一个数量级, 而响应度提高了2倍. 结果表明, 采用TaN薄层制作金属与Ge接触电极, 可有效钝化金属与Ge界面, 减轻费米钉扎效应, 降低金属与n-Ge接触的势垒高度, 因而减小接触电阻和界面复合电流, 提高探测器的光电性能.