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981.
The coupling of visible nanosecond laser pulses to metallic targets irradiated in vacuum is studied. The expressions of the vapour and plasma ignition times are obtained. Two cases for vapour breakdown in the plasma ignition process are considered. The first case is that 40 generations of new electrons are born in vapour generation time before plasma formation as assumed in the literature. The second case is that 10 generations of new electrons are born in vapour generation time. Molybdenum (Mo), niobium (Nb) and aluminium (Al) targets are considered for illustrations of our results. The expression of the plasma ignition time for the Al target is substantially different from that reported in the literature. The vapour and plasma ignition threshold laser intensities are calculated and compared with those reported in the literature. Reasons for disagreement are discussed. The plasma ignition threshold estimated in the second case is noted to be in good agreement with the reported experimental result. 相似文献
982.
983.
984.
We construct a three-parameter family of contact metric structures on the unit tangent sphere bundle T
1
M of a Riemannian manifold M and we study some of their special properties related to the Levi-Civita connection. More precisely, we give the necessary
and sufficient conditions for a constructed contact metric structure to be K-contact, Sasakian, to satisfy some variational conditions or to define a strongly pseudo-convex CR-structure. The obtained
results generalize classical theorems on the standard contact metric structure of T
1
M. 相似文献
985.
986.
Dorota G?azowska Janusz Matkowski 《Journal of Mathematical Analysis and Applications》2007,331(2):1187-1199
The invariance of the geometric mean G with respect to the Lagrangian mean-type mapping (Lf,Lg), i.e. the equation G○(Lf,Lg)=G, is considered. We show that the functions f and g must be of high class regularity. This fact allows to reduce the problem to a differential equation and determine the second derivatives of the generators f and g. 相似文献
987.
The energy levels of neutral anion (VA) and cation (VC) vacancies and antisite defects are calculated for the anion CA and cation AC sublattices of III–V semiconductors. An averaged energy level position for these defects is estimated to be Eav
abs = 4.9 eV. The position coincides with the local charge electroneutrality level. It is shown that the case, where the total
energies of formation of VA, VC and antisite CA, AC defects in the sublattices of binary semiconductors are similar, corresponds to the point-defect equilibrium condition and
stabilization of the Fermi level in the proximity of the local charge electroneutrality level.
__________
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 17–22, May, 2007. 相似文献
988.
989.
The charge distribution of fragments originatingfrom the fission of the 236U compound nucleus is calculated within a stochastic approach based on Langevin equations. The elongation coordinate, the neck-thickness coordinate, and the charge-asymmetry coordinate are chosen as collective variables. The friction parameter of the charge mode is calculated on the basis of two nuclear-viscosity mechanisms, that of one-body and that of two-body dissipation. It is shown that the Langevin approach is applicable to studying isobaric distributions. In addition, the charge distribution in question is studied as a function of the excitation energy of the compound nucleus and as a function of the coefficient of two-body viscosity. 相似文献
990.
W.G. Schmidt 《Applied Physics A: Materials Science & Processing》2002,75(1):89-99
There has been renewed interest in the structure of III-V compound semiconductor (001) surfaces caused by recent experimental
and theoretical findings, which indicate that geometries different from the seemingly well-established dimer models describe
the surface ground state for specific preparation conditions. I review briefly the structure information available on the
(001) surfaces of GaP, InP, GaAs and InAs. These data are complemented with first-principles total-energy calculations. The
calculated surface phase diagrams are used to explain the experimental data and reveal that the stability of specific surface
structures depends largely on the relative size of the surface constituents. Several structural models for the Ga-rich GaAs (001)(4×6)
surface are discussed, but dismissed on energetic grounds. I discuss in some detail the electronic properties of the recently
proposed cation-rich GaAs (001)ζ(4×2) geometry.
Received: 18 May 2001 / Revised version: 23 July 2001 / Published online: 3 April 2002 相似文献