Photoluminescence and persistent photoconductivity of Al<Subscript>x</Subscript>Ga<Subscript>1-x</Subscript>N/GaN heterostructures

We have investigated the optical properties of Al_xGa_1-xN/GaN heterostructures (x=0.08, 0.15, 0.33) grown by metal organic chemical vapor deposition on sapphire using photoluminescence (PL) and persistent photoconductivity (PPC) measurements. For the Al_xGa_1-xN/GaN heterostructures (HS) containing high Al composition, we observed an anomalous temperature-dependent photoluminescence and persistent photoconductivity effects. These results show a strong dependence of the physical properties of Al_xGa_1-xN/GaN HS on the Al content and layer thickness. The anomalous temperature-dependent PL is usually attributed to the presence of carrier localization states. These phenomena are explained based on the alloy compositional fluctuations in the Al_xGa_1-xN/GaN HS. From the PPC measurements, the photocurrent (PC) quenching was observed for Al_xGa_1-xN/GaN HS and it is explained by the metastable states formed in the underlying GaN layer. Also, the mechanisms behind the PC quenching and PPC phenomena are explained in detail. PACS 72.20.Jv; 72.40.+w; 78.55.Cr     

K9和石英玻璃基片上Au膜真空紫外反射特性研究

采用离子束溅射法,分别在经过不同前期清洗方法处理过的K9及石英玻璃光学基片上,选择不同的镀膜参量,镀制了多种厚度的Au膜。对镀制的Au膜在真空紫外波段较宽波长范围内的反射率进行了连续测量。测试结果表明:辅助离子源的使用方式、Au膜厚度对反射镜的反射率有重大影响。基片材料、镀前基片表面清洗工艺等对反射率也有一定影响。采用镀前离子轰击,可显著提高Au膜反射率及膜与基底的粘合力;获得最高反射率时的最佳膜厚与基片材料、镀膜工艺密切相关。对经过离子清洗的石英基片,膜厚在30 nm左右反射率最高;比较而言,石英基片可获得更高的反射率;辅助离子源的使用还显著影响获得最高反射率时对应的最佳膜厚值,且对K9基片的影响更显著。     

Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 K.The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K.The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth.The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes.The incorporation of bismuth also induces alloy non-uniformity in the quantum well,leading to an increased photoluminescence linewidth.     

设计和实现三维空间任意庞加莱截平面电路

庞加莱截面法是简化分析复杂动力系统运动状态的有效方法.为实现在线方便观测复杂系统的状态,本文设计并实现了三维任意庞加莱截平面电子电路.文章首先详细分析和研究了设计三维任意庞加莱截平面电路的关键性问题,然后分类设计和实现了物理电路.由于蔡氏电路具有丰富的动力学行为,因此以典型的蔡氏电路作为实验待测动力系统,对设计的截平面电路进行了大量的物理实验,测出了蔡氏电路各种状态下的截平面图,以及同一种混沌状态下选取不同截面的测试实验.实验中采用了两种双踪示波器(模拟示波器和数字示波器)在线实测了庞加莱截平面映射和状态图.与此同时,利用Matlab进行了计算机仿真辅助实验.所有实验结果表明设计的庞加莱截平面电路具有实用性和有效性.     

Synthesis and luminescent properties of BaGd2O4:Dy3+, an novel scintillating phosphor

The BaGd_2?x O₄:xDy³⁺ (0 ≤ x ≤ 0.08) phosphors were synthesized at 1,300 °C in air by the solid-state reaction route. The as-synthesized phosphors were characterized by X-ray powder diffraction, photoluminescence excitation spectra, photoluminescence (PL) spectra, X-ray excited luminescence (XEL) spectra, and thermoluminescence (TL) spectra. It is found that the quenching concentration of Dy³⁺ ions in BaGd₂O₄ host is dependent on the selected excitation wavelength. The optimal PL intensity for the investigated BaGd_2?x O₄:xDy³⁺ phosphors is found to be x = 0.01, 0.02, and 0.04, upon excitation by 234, 277, and 350 nm ultraviolet light, respectively. The energy transfer among Dy³⁺ ions upon excitation by 350 nm is confirmed to be an electric dipole–dipole interaction mechanism based on the fitting of Huang’s rule. In addition, the intensive XEL from BaGd₂O₄:Dy³⁺ phosphor is observed by the naked eyes at room temperature, and TL properties of the investigated phosphors are analyzed and discussed. All the results imply that the investigated phosphors could be a promising scintillating phosphor.     

土壤水分对近红外光谱实时检测土壤全氮的影响研究

利用近红外光谱技术实时预测土壤全氮含量是精细农业的研究热点之一,但是由于土壤水分在近红外波段的吸收系数较高,影响了土壤全氮含量的实时预测精度。使用布鲁克MATRIX_I傅里叶近红外光谱分析仪对不同土壤水分的土壤样本进行了近红外光谱扫描,定性和定量的分析了土壤水分对近红外光谱的影响,并提出了一种消除土壤水分对土壤全氮含量预测影响的方法。近红外光谱扫描结果显示在同一全氮含量水平下,随着土壤水分含量的增加,光谱吸光度呈逐渐上升的趋势,且变化趋势为非线性。通过对1 450和1 940 nm两个水分吸收波段的差分处理,设计了水分吸收指数MAI（moisture absorbance index）,再对土壤按照水分含量梯度进行分类,提出了相应的修正系数。修正后的6个土壤全氮特征波段处(940,1 050,1 100,1 200,1 300和1 550 nm)的土壤吸光度值作为建模自变量,使用BP神经网络建立了土壤全氮预测模型,模型的R_C,R_V,RMSEC,RMSEP和RPD分别达到了0.86,0.81,0.06,0.05和2.75;与原始吸光度所建模型相比较模型精度得到了显著提高。实验结果表明本方法可以有效地消除土壤水分对近红外光谱检测土壤全氮含量预测的影响,为土壤全氮含量实时预测提供了理论和技术支持。     

适用于雷达系统的高温超导窄带滤波器

对雷达系统,通过在接收前端安置高Q、窄带、高带外抑制的滤波器,可以有效减少信号间的干扰,由此可见高性能的滤波器对于雷达系统来说,具有重要作用.与常规滤波器相比,高温超导滤波器具有带边陡峭、插入损耗小、带外抑制高、可以设计极窄带等特点.在本文中,我们设计加工了一种高性能的12阶切比雪夫(Chebyshev)高温超导带通滤波器,其中心频率为1341兆赫兹、带宽为5.035兆赫兹,可用于雷达系统.在滤波器设计中,我们用Sonnet软件对滤波器进行了仿真计算.最后滤波器在以氧化镁为衬底的双面超导薄膜上制作,衬底直径为2英寸、厚度为0.5毫米.测试结果表明,该滤波器符合设计要求,具有很好的选择性和带外抑制.     

金属薄膜制备及物性测量系列实验

介绍了由模拟真空实验和“金属薄膜的制备”、“金属薄膜厚度的测量”、“金属薄膜电阻率的测量”,以及“金属薄膜生长过程的动态监测”等4个实验组成的金属薄膜制备与物性测量系列实验.这组实验与现代科学技术发展联系紧密,仪器设备可靠,操作简单,适合于普通物理实验阶段的研究性教学.