基于神光Ⅲ原型的激光直接驱动自由面准等熵实验研究

长脉冲激光打靶的直接驱动方式效率较高,但对激光强度变化非常敏感。利用测量自由面速度历史的方法对激光直接驱动准等熵压缩实验技术进行了分析,为改进激光直接驱动的准等熵压缩实验技术提供技术基础。介绍了国内在神光III原型装置上首次开展的激光直接驱动自由面准等熵压缩实验。对实验靶型、激光波形、典型实验结果以及实验中的关键技术进行了分析。在激光能量为1000 J的实验中,使用成像型速度干涉仪获得了较为理想的准等熵压缩条纹图。实验发现,自由面速度达到11.3 km/s时,自由面反射的探针光信号消失。通过对比Multi-1D软件的理论模拟数据与实验处理的结果,发现由于Al自由面缺少约束,这类实验会造成波系复杂化的问题,但是对主冲击的研究还是有意义的。对某些特殊材料,在很难找到阻抗匹配窗口的条件下,利用激光直接驱动方式研究材料高压响应特性提供了另一条可实施的技术途径。     

大学物理演示实验工作的新思路、新进展

北京交通大学在“国家工科物理教学基地”建设的过程中,以建设物理演示与探索实验室为特色工作,取得了突出成绩．不仅在2004年国家工科物理教学基地验收时以其突出的特色,获得了“优秀基地”的称号,而且在2005年获得国家教学成果特等奖．我们认为这并不意味着这项工作的结束,而是以此做为将演示实验工作推向更高水平的开端．从2007年开始,我们一方面不断充实提高,保持演示实验室的动态发展;另一方面着力研发随堂演示实验并投入使用,取得了显著成效．     

LED毫伏级待测电动势实验仪的设计及其稳定性的研究

为了满足电位差计实验对毫伏级待测电动势需求,设计了LED毫伏级待测电动势实验仪,并对其稳定性进行了研究.待测电动势实验仪是通过光电转换来实现的,输出的毫伏级电动势在电位差计实验仪的各个测量点都能稳定,能够满足箱式电位差计测量范围和精度要求,是比较理想的箱式电位差计实验配套仪器,能够大大提高学生的实验效率和教师对实验设计的选择性,实验效果良好.     

金属-有机骨架材料二聚铜-苯-1，3，5-三羧酸酯中烷烃扩散机理的分子模拟研究

采用分子动力学方法研究了直链烷烃C₁—C₄在二聚铜-苯-1,3,5-三羧酸酯（Cu-BTC）中的扩散机理.首先计算了4种烷烃的自扩散系数,并进一步通过质心分布图与分子轨迹图详细讨论了主、次孔道中各种类型的扩散路径.研究结果表明,不同烷烃在Cu-BTC中表现出的不同或近似的宏观扩散速率,是由微观上受到不同的扩散路径阻力并偏好不同的扩散路径所造成的.这些信息可提高人们对该类材料的认识,并为材料的实际应用以及新材料设计提供理论指导. 关键词： 分子模拟 二聚铜-苯-1 5-三羧酸酯 烷烃 扩散机理     

Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

Strain-compensated Ge/Si_0.15Ge_0.85 multiple quantum wells were grown on an Si_0.1>Ge_0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n⁺-Si(001) substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

Spectroscopic Studies of the Stability of Doped Polythiophenes Under Air

Abstract

The stability of the doped state of conductive polythiophenes under air was investigated by the use of Infrared (IR) and UV-visible (UV) spectroscopies. Poly(3-methyl thiophene) doped with BF₃-ethyl ether (BFEE). shows higher stability due to its stereoregularity-chain structure. While the doped polythiophene (PT) degrades easily under the moisture.     

光谱技术分析尿素对BSA糖基化反应的影响

以牛血清白蛋白(BSA)和葡萄糖为原料,采用光谱技术从分子水平上研究不同浓度尿素(0～7 mol·L-1)对BSA糖基化反应的影响.结果表明:BSA经过尿素处理后,其糖基化产物的自由氨基含量和内源荧光强度均显著下降;同步荧光光谱表明BSA与尿素的结合点更接近于色氨酸(Trp)残基;紫外光谱分析表明经尿素处理后BSA的糖...     

A proposal for preparation of cluster states with linear optics

Measurement-based quantum computation in an optical setup shows great promise towards the implementation oflarge-scale quantum computation. The difficulty of measurement-based quantum computation lies in the preparation ofcluster state. In this paper, we propose the method of generating the large-scale cluster state, which is a platform formeasurement-based quantum computation. In order to achieve more complex quantum circuits, the preparation protocolof N-photon cluster state will be proposed as a generalization of the preparation of four- and five-photon cluster states.Furthermore, our proposal is experimentally feasible.     

Comparison between photoluminescence spectroscopy and photoreflectance spectroscopy in CuGaSe2 epilayer

Photoluminescence （PL） spectroscopy and photoreflectance （PR） spectroscopy are very useful techniques for studying the properties of materials. In this paper, the same material of Cu-rich metal-organic vapour phase epitaxy （MOVPE） grown CuGaSe2 layer is investigated in a temperature range from 20 to 300 K to compare these two techniques. Both PL and PR spectra appear red shifted, less intense and broadened. The temperature dependence of interband transitions is studied by using the Manoogian Leclerc equation. The values of the band gap energy at T=0K and the effective phonon temperature are estimated. The temperature dependences of intensities and broadenings of PL and PR spectral lines are also analysed. Based on the results of the comparison, the features and applications of the PL and PR can be shown in detail.