958.
The relationship between the diffusivity
D
n
and the mobility
μ
n
of chemically doped organic n-type semiconductors exhibiting a disordered band structure is presented. These semiconductors
have a Gaussian-type density of states. So, calculations have been performed to elucidate the dependence of
D
n
/
μ
n
on the various parameters of this Gaussian density of states. Y. Roichman and N. Tessler (Appl. Phys. Lett. 80:1948,
2002), and subsequently Peng et al. (Appl. Phys. A 86:225,
2007), conducted numerical simulations to study this diffusivity–mobility relationship in organic semiconductors. However, almost
all other previous studies of the diffusivity–mobility relationship for inorganic semiconductors are based on Fermi–Dirac
integrals. An analytical formulation has therefore been developed for the diffusivity/mobility relationship for organic semiconductors
based on Fermi–Dirac integrals. The
D
n
/
μ
n
relationship is general enough to be applicable to both non-degenerate and degenerate organic semiconductors. It may be an
important tool to study electrical transport in these semiconductors.
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