Spin-polarized zero-energy states in BN/C core–shell quantum dots

Boron-nitride (BN) domains in graphene or graphene domains in BN monolayer offer additional freedoms for tuning the electronic properties of these BN/C nanostructures, which is quite crucial for the applications in nanoscale devices. Based on first-principles calculations combined with a simple Hubbard model, we show that the electron zero-energy states (ZESs) of BN/graphene core–shell quantum dots (QDs) in triangular shapes can be well tuned by varying the size and topology of each domain. The net spin of the systems is dominated by the graphene segment which can be described by a Lieb?s theorem. We also demonstrated that a π-electron Hubbard model within a mean-field approximation is implementable in dealing with the electron spin-polarization of BN/C hetero-structured graphene-like materials. This provides an efficient theoretical approach for the BN/C systems where electron spin-polarization is involved.     

Theoretical analysis of the performance of a single side band multicarrier source based on a re-circulating frequency shifter influenced by an optical bandpass filter

An optical bandpass filter （OBF） is an important element whose properties considerably influence the output performance of a single side band multicarrier source based on a re-circulating frequency shifter. The influence of the OBF in the loop on the output spectrum is theoretically analyzed. Numerical simulations and experiments are Mso carried out. Results show that the steepness and deepness of a nonflat-top filter influence the stability of the spectrum of an output multicarrier. To obtain multicarrier output with tone to noise ratio （TNR） 〉26 dB and error vector magnitude （EVM） 〈0.25, the steepness ratio of the filter should be greater than 0.75 and deepness should be larger than 0.99.     

Effect of magnetic field on the TC and magnetic properties for the aligned MnBi compound

In the compound MnBi, a first-order transition from the paramagnetic to the ferromagnetic state can be triggered by an applied magnetic field and the Curie temperature increases nearly linearly with an increase in magnetic field by ∼2 K/T. Under a field of 10 T, T_C increases by 20 and 22 K during heating and cooling, respectively. Under certain conditions a reversible magnetic field or temperature induced transition between the paramagnetic and ferromagnetic states can occur. A magnetic and crystallographic H-T phase diagram for MnBi is given. Magnetic properties of MnBi compound aligned in a Bi matrix have been investigated. In the low temperature phase MnBi, a spin-reorientation takes place during which the magnetic moments rotate from being parallel to the c-axis towards the basal plane at ∼90 K. A measuring Dc magnetic field applied parallel to the c-axis of MnBi suppresses partly the spin-reorientation transition. Interestingly, the fabricated magnetic field increases the temperature of spin-reorientation transition T_s and the change in magnetization for MnBi. For the sample solidified under 0.5 T, the change in magnetization is ∼70% and T_s is ∼91 K.     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

真空退火对L1_0-CoPt薄膜结构、磁性及表面形貌的影响

本文利用磁控溅射的方法制备了L1_0-CoPt薄膜,研究了不同退火条件对薄膜结构、磁性以及表面形貌的影响.通过优化退火温度、保温时间以及升温速率,制备出了具有大矫顽力、高矩形比、粗糙度小的垂直各向异性L1_0-CoPt薄膜.实验发现,较高的退火温度有利于克服CoPt薄膜有序化转变所需要的能量,同时适当延长退火时间可以提高CoPt薄膜的扩散系数,从而促使无序相fcc转化为L1_0有序相fct结构.此外,退火过程中减缓升温速率可以有效减小薄膜粗糙度,从而形成平整连续膜.     

丝氨酸异构体的电子-分子形状共振态及其解离动力学理论研究

Shape resonances of electron-molecule system formed in the low-energy electron attachment to four low-lying conformers of serine (serine 1, serine 2, serine 3, and serine 4) in gas phase are investigated using the quantum scattering method with the non-empirical model potentials in single-center expansion. In the attachment energy range of 0-10 eV, three shape resonances for serine 1, serine 2, and serine 4 and four shape resonances for serine 3 are predicted. The one-dimensional potential energy curves of the temporary negative ions of electron-serine are calculated to explore the correlations between the shape resonance and the bond cleavage. The bond-cleavage selectivity of the different resonant states for a certain conformer is demonstrated, and the recent experimental results about the dissociative electron attachment to serine are interpreted on the basis of present calculations.     

基于AUTOSAR的点到点安全通信的实现

功能安全的概念在汽车嵌入式系统领域越发到关注,汽车开放系统架构AUTOSAR(Automotive Open System Architecture)是目前国际流行的标准软件架构,它在AUTOSAR4.1的版本中针对功能安全首次提出了点到点（End-to-End,E2E）的安全通信机制。为保证汽车各组件间的通信安全,对在AUTOSAR架构下的E2E安全通信机制进行了研究,采用E2E Profile 2的方法来实现E2E安全通信,旨在解决如何保证电子控制单元(Electronic Control Unit,ECU)之间以及ECU内部不同核之间,不同SWC（software component）之间数据的安全通信的问题。基于AUTOSAR架构,通过在电子控制单元核内通信采用E2E Protection Wrapper的通信方式,跨电子控制单元核外通信采用COM E2E Callout的通信方式实现了通信机制的搭建。通过对ECU内部及跨ECU的通信测试,表明该方法能有效的检测通信过程中的重复发送错误、CRC(Cyclic Redundancy Check)校验和错误及发送序列错误等问题。     

有机掺杂溶胶-凝胶法制备pH敏感膜及其光谱响应的研究

使用四甲氧基硅烷（TMOS）和二甲基二甲氧基硅烷（DiMe-DMOS)为共先驱体，采用溶胶－凝胶的有机掺杂，制备对pH具有宽程响应的敏感膜。详细考察了包埋溴酚蓝和溴酚绿的敏感膜对pH的响应值、响应时间、泄漏和可逆性等响应性能指标，并进行了溴酚蓝和溴酚绿在水相与膜内吸收光谱的研究。     

掺Eu3+硅基材料的发光性质

通过溶胶－凝胶技术制备了掺Eu^3 的硅基材料并测试了其三维荧光光谱、激光谱和发射光谱，结果显示，最佳激发波波长为350nm,最强荧光波长为620nm；在350nm光激发下的发射光谱显示Eu^3 的特征发射光谱，产生4条谱带，分别是577nm(^5D0-^7F0)，588nm(^5D0-^7F1),596nm(^5D0-^7F1)和610nm(^5D0-^7F2)。     

多光轴光学系统光轴平行度野外试验方法

基于激光测距的基本原理及激光能量分布情况，利用测距的方法进行对角度的测量，在野外全系统工作状态下，实现了多光轴系统平行度的测试，并对该方法的测试精度进行了分析。