双包层椭圆光波导解析解

解析求解了双包层椭圆光纤中的波动方程，得到了模式精确解有模式特征方程。对基模的特征方程进行了数值计算，给出了不同椭圆比下的归一化双折射和模间色散随归一化频率的变化关系曲线，并与高斯近似解的结果进行了比较。     

PIXE analysis of the Mn-doped content in Ga1-xMnxN film grown by LP-MOVPE

Summary Department of Technical Physics, School of Physics, Peking Unive     

具有位相型修理的离散时间可修排队系统

本文研究了具有一般独立输入，位相型修理的离散时间可修排队系统，假定服务台对顾客的服务时间和服务台寿命服从几何分布，运用矩阵解析方法我们给出系统嵌入在到达时刻的稳态队长分布和等待时间分布，并证明这些分布均为离散位相型分布．我们也得到在广义服务时间内服务台发生故障次数的分布，证明它服从一个修正的几何分布．我们对离散时间可修排队与连续时间可修排队进行了比较，说明这两种排队系统在一些性能指标方面的区别之处．最后我们通过一些数值例子说明在这类系统中顾客的到达过程、服务时间和服务台的故障率之间的关系．     

~n中有界域上全纯函数的第Ⅰ型 C-F公式

本文得到Ｃｎ中有界域上全纯函数的一种其积分密度函数含有全纯函数导数的 Ｃａｕｃｈｙ－Ｆａｎｔａｐｐｉ　　公式，称之为第Ⅰ型 Ｃ－Ｆ 公式，利用这个公式，通过适当选择其中的向量函数，可以得到许多区域上全纯函数相应的第Ⅰ型积分表示式．     

Low-threshold, high-efficiency, high-repetition-rate optical parametric generator based on periodically poled LiNbO3

We report a high-repetition-rate optical parametric generator (OPG) with a periodically poled lithium niobate (PPLN) crystal pumped by an acousto-optically Q-switched CW-diode-end-pumped Nd:YVO_4 laser. For the maximum 1064nm pump power of 970mW, the maximum conversion efficiency is 32.9% under the conditions of 250℃, 1064nm pulse repetition rate of 22.6kHz and pulse width of 12ns, and the PPLN OPG threshold in the collinear case is less than 23.7μJ. The output power increases with the increase of the crystal temperature. The 1485－1553nm signal wave and 3383－3754nm idler wave are obtained by changing the temperature and the angle of the PPLN crystal.     

白光干涉条纹变密的原因探讨

讨论了在测定透明介质折射率的过程中彩色条纹变密的现象，并在其基础上分析其成因：一是由于媒质折射率加大；二是由于平形板介质平行度不好造成楔形的倾角变大，最后在实验中验证了理论结果。     

Effect of nonstoichiometry on Raman scattering of VO2 films

We report on Raman scattering of VO2 films prepared by radio frequency magnetron sputtering under different conditions. Our investigations revealed that the dominated Raman peaks shift towards high frequency for both V-rich and O-rich VO2 films, compared with the stoichiometry VO2 films. The experimental evidence is presented and the cause for nonstoichiometry dependence of Raman spectra of VO2 films is discussed.     

Reduction of dislocation density and improvement of optical quality in ZnO layers by MgO-buffer annealing

Optical properties of ZnO thin films with/without MgO-buffer annealing were investigated by low and room temperature photoluminescence measurements. The ZnO films were grown on c-sapphire substrates by plasma-assisted molecular-beam epitaxy employing a thin MgO-buffer layer. Dislocation density of ZnO layer was reduced from 5.3 × 10⁹ to 1.9 × 10⁹ cm⁻² by annealing MgO-buffer prior to the growth of ZnO. The intensity of free exciton emission from the sample with MgO-buffer annealing was almost twice of that from the sample without annealing, while the deep level emission from the sample with MgO-buffer annealing was about 1/3 of that without annealing. The MgO-buffer annealing improves optical quality of overgrown ZnO films.     

Experimental 511 W Composite Nd：YAG Ceramic Laser

We demonstrate a 511 W laser diode pumped composite Nd：YAG ceramic laser. The optical pumping system is consisted of five laser diode stacked arrays arranged in a pentagonal shape around the ceramic rod whose size is φ6.35×144mm. When the pumping power is 1600 W, the cw laser output up to 511 W at 1064nm can be obtained with a linear piano-piano cavity, and the optical-to-optical efficiency is 31.9%. To our knowledge, this is the highest value of laser output by using a newly invented composite Nd：YAG ceramic rod as the gain medium.     

Optical characterization of CdTe/ZnSe fractional monolayer structures grown by atomic layer epitaxy

Luminescence properties of CdTe/ZnSe fractional monolayer grown by atomic layer epitaxy have been investigated. To investigate the origin of the highly efficient luminescence, various optical spectroscopic methods such as, photoluminescence (PL), temporal/spatial resolved PL, temperature dependence PL, and excitation power dependence PL have been used. It is found that structural inhomogeneities affect dominant influence on the line width and line shape of luminescence. The luminescence intensity greatly enhanced by the localization of exciton at the disorder induced localized states.