界面条件下线型超声相控阵声场特性研究

开展了界面条件下线型超声相控阵声场特性的研究.将带有楔块的超声相控阵问题合理简化为液固界面的情况进行讨论.根据射线声学理论,计算了单阵元在液固界面存在时的辐射声场,进而推导了聚焦法则,得到了超声线型阵在液固界面存在时的声场、位移场表达式.对安装在楔块上的相控阵换能器的辐射声场进行了仿真,并讨论了聚焦对换能器轴向和横向声场的影响,结果表明利用聚焦能提高分辨率和灵敏度,但聚焦区域之外声束性能更差,在实际检测中要合理利用聚焦. 关键词： 超声相控阵 界面 声场 聚焦     

Describing spatiotemporal couplings in ultrashort pulses using coupling coefficients

Three coupling coefficients are defined to describe spatiotemporal coupling in ultrashort pulses. With these coupling coefficients, the first-order spatiotemporal couplings of Gaussian pulse and beam are described analytically. Also, the first-order and the second-order spatiotemporal couplings caused by angular dispersion elements are studied using these coupling coefficients. It can be shown that these coupling coefficients are dimensionless and normalized, and readily indicate the severity of spatiotemporal coupling.     

Local leakage current behaviours of BiFeO3 films

The leakage current behaviours of polycrystalline BiFeO₃ thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements. The local charge transport pathways are found to be located mainly at the grain boundaries of the films. The leakage current density can be tuned by changing the post-annealing temperature, the annealing time, the bias voltage and the light illumination, which can be used to improve the performances of the ferroelectric devices based on the BiFeO₃ films. A possible leakage mechanism is proposed to interpret the charge transports in the polycrystalline BiFeO₃ films.     

γ辐照掺杂SiO2的ESR研究

分别掺有磷和硼的二氧化硅经γ辐照后产生多种顺磁性中心,ESR研究指出氧空穴O^-主要稳定在杂质离子附近.O₂^-自由基稳定在Si离子上.F心的研究认为氧缺位俘获电子存在一个动态平衡过程.     

使用二元相位菲涅尔波带片产生轴向线聚焦

介绍了一种全新的轴向线聚焦方案.采用菲涅尔波带片，在实验中产生了沿轴向长为5mm，宽 100μm的线聚焦.光学测量表明，线聚焦轴向强度分布比较均匀.这些参数基本上可以满足激 光等离子体实验的要求. 关键词： 菲涅尔波带片 轴向线聚焦     

超低密度SiO2气凝胶的制备及成型研究

 以正硅酸乙酯(TEOS)为硅源，采用酸碱二步催化溶胶-凝胶法，结合超临界干燥技术制备了超低密度SiO₂气凝胶,最低密度为3.4 mg/cm³；进一步结合成型工艺，在解决了模具设计和脱模技术后制备了具有不同密度的柱状和微型套筒样品，密度10～50 mg/cm³。研究了水、催化剂、稀释剂对二步溶胶-凝胶过程的影响，获得了制备低密度SiO₂气凝胶的最佳条件。利用扫描电镜、孔径分布及比表面积测试仪等对SiO₂气凝胶微结构进行了研究。结果表明，获得的超低密度SiO₂气凝胶具有较好的纳米网络，平均孔径18.9 nm，还具有高比表面积898 9 m²/g。     

激光辐照环境对金属材料反射特性的影响

 利用积分球绝对测量法,对在20 Pa真空缺氧、1 000 Pa空气,10⁵ Pa空气及1 000 Pa氧气环境下,1 064 nm波长连续激光辐照30CrMnSiA碳钢材料过程中的反射光信号进行了测量,得到了30CrMnSiA碳钢在4种辐照环境下的反射率和温度变化曲线。结果表明：在空气组分辐照环境的低压到10⁵ Pa范围内,材料初始反射率随压力增大而增大;在缺氧和富氧环境的激光辐照过程中,缺氧环境下材料反射率变化缓慢,且变化拐点温度高于富氧环境,富氧环境下材料被加热后的快速氧化反应有利于材料对激光能量的吸收;不同辐照环境（缺氧和富氧）相同材料温度条件下,材料反射率并不相同。     

Controlling of symmetric and asymmetric mode coupling in long-period fiber gratings singe-side induced by long-pulse CO2 laser

We report a simple fabricating approach to control the mode couplings in long-period fiber gratings (LPFGs) through side exposing fiber to long-pulse-10.6-μm laser from a cheap, internally modulated CO₂ tube. By tuning focused-spot size on fibers, not only circularly symmetric mode coupling but also asymmetric mode couplings can be effectively achieved. Simulation of mode profiles in grating cross-section with Finite Element Method (FEM), and LPFG-cladding etching experiment with hydrofluoric acid (HF), support our explanation that asymmetric mode coupling in LPFGs depends on local refractive-index (RI) change within an azimuthally thin cladding layer, resulted from large-spot method induced deep melt flow on fiber surface during CO₂ laser irradiation.     

ICF中子发射时间诊断

 对ICF中子发射时间的诊断技术进行了研究,研制了基于快闪烁体和微通道板式光电倍增管的中子发射时间探测器。在某大型激光原型装置上进行了中子发射时间的实验测量,成功获得多发实验的中子发射时间与打靶激光脉冲的时间及中子发射时间之间的关系。实验结果表明：中子发射时间探测器对DT中子和DD中子都能够响应,中子产额测量下限达到10⁷,时间测量不确定度小于20 ps;CH烧蚀层越厚,中子发射时间越长。     

Synthesis and characterization of Ag-doped p-type ZnO nanowires

P-type ZnO nanowires with silver (Ag) doping were synthesized via a chemical vapor deposition process. The incorporation of Ag was confirmed by selected-area energy-dispersive x-ray spectroscopy. The formation of acceptor states was demonstrated by temperature and excitation power-dependent photoluminescence measurements. Characterization of field-effect transistors using Ag-doped ZnO nanowires as channels showed p-type conductivity of the nanowires with a hole concentration of 4.9×10¹⁷ cm⁻³ and a carrier mobility of approximately 0.18 cm² V⁻¹ s⁻¹.