Multiple-image encryption using phase retrieve algorithm and intermodulation in Fourier domain

We propose a novel method for multiple-image encryption using a phase retrieve algorithm and intermodulation in the Fourier domain. All plaintexts to be encoded are first encoded separately into a phase-only function in the Fourier domain with the help of the phase retrieve algorithm. Then these phase-only functions serve mutually as the second encryption keys to be intermodulated into a single image. As a result, all plaintexts can be extracted from the ciphertext without any cross-talk and the encrypted capacity is nearly unlimited. The feasibility and effectiveness of the proposed method are demonstrated by numerical results.     

Finite Difference/Element Method for a Two-Dimensional Modified Fractional Diffusion Equation

We present the finite difference/element method for a two-dimensional modified fractional diffusion equation. The analysis is carried out first for the time semi-discrete scheme, and then for the full discrete scheme. The time discretization is based on the $L1$-approximation for the fractional derivative terms and the second-order backward differentiation formula for the classical first order derivative term. We use finite element method for the spatial approximation in full discrete scheme. We show that both the semi-discrete and full discrete schemes are unconditionally stable and convergent. Moreover, the optimal convergence rate is obtained. Finally, some numerical examples are tested in the case of one and two space dimensions and the numerical results confirm our theoretical analysis.     

The effects of ⁶⁰Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors

The effects of 60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron-mobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by 60Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode AlGaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.     

容积式制冷机组性能测试的一种改进实验装置

针对容积式压缩机组测试设备的初始投资高,能耗高的问题,介绍了一种改进的实验装置.其制冷量测量采用制冷剂液体流量计法。研究测试结果表明:(1)改进实验装置控制精度较高;(2)改进的实验装置的相对误差为1.5%。与房间量热计相比,该实验装置节能72.2%且初始投资节省60%。     

蒸汽压缩制冷系统的稳态和瞬态建模分析

针对蒸汽压缩制冷系统工作过程的分析,建立了蒸汽压缩系统的瞬态和稳态数学模型,对整个蒸汽制冷系统的内部结构开展了深入的研究,并对其组成结构中的相关单元模块进行了建模与分析,在此基础上给出了制冷系统详细的瞬态和稳态的数学模型描述形式,通过对模型的仿真与测试给出了制冷系统工作过程中主要参数的变化情况,尤其是仿真结果与实际系统的工作过程进行对比,验证后表明本文所建立的工作模型,其COP性能与实测的结果误差不超过5%。     

大直径W1/O/W2乳粒的稳定性

在准静态条件和旋转流体场中采用乳液微封装技术制备约2 mm的大直径W1/O/W2乳粒,研究了有机相浓度和水溶性聚合物浓度对W1/O/W2乳粒稳定性的影响。从乳粒受力和变形的角度,探索了旋转流体场对W1/O/W2乳粒动力学稳定性的增强作用机制。研究表明:无论是在准静态条件下还是旋转流场中,乳粒稳定性都随聚苯乙烯浓度单一上升,随聚乙烯醇浓度呈现先上升后下降的趋势;相对于准静态条件,旋转流体场在一定条件下对大直径W1/O/W2乳粒的动力学稳定具有明显增强作用。     

新型半导体开关高压电磁脉冲产生技术

基于独特结构和物理特性的两类高性能新型高压半导体开关漂移阶跃恢复二极管和快速离化开关,提出一种新型高功率高压纳秒电磁脉冲产生方法,其技术路径是通过高压漂移阶跃恢复二极管开关将高贮能电感能量向高压快速离化开关及负载转移,产生高功率、高重复频率纳秒电磁脉冲,并用实验验证该方法在高重复频率（120,200,300 kHz）下产生高功率、高重复频率纳秒脉冲的有效性,输出脉冲电压分别为1.62,1.41,1.36 kV。     

相对论返波管振荡器齿状阴极

研究了一种齿状阴极的电子束产生传输过程以及对相对论返波管振荡器产生高功率微波的影响。基于SINUS881加速器,利用束流轰击金属靶观测齿状阴极产生电子束在不同轴向位置上的角向分布,并开展了基于环形阴极和齿状阴极的X波段相对论返波管振荡器的实验研究。对不同齿数及尺寸对电子束流特性、器件输出微波功率和脉冲宽度的影响进行了分析。实验结果表明:当阴极的齿数增加到一定数量时,电子束的横向运动使得电子束在径向逐渐趋于分布均匀;与均匀环形阴极的打靶结果近似,此时,电子束对于相对论返波管振荡器产生微波的功率和脉宽影响不大。     

粉末粒度离散性对NdFeB磁性能的影响

制备了一种NdFeB永磁材料,探讨了制粉前处理方式对粉末离散性、粒径及成品NdFeB永磁体结构与性能的影响。原材料经熔炼、粗破碎后,采用高速风选和高压氢爆2种制粉前处理方式,然后采用同样的成型、烧结和回火工艺制备得到(PrNd)32.3Nb0.70Al0.60Cu0.20B1.03Fe65.17合金,并系统研究了该合金的显微结构和磁性能。结果表明:高压氢爆处理后得到的粉末粒度呈单分散性,粉末粒径较细,所制备得到的磁体样品的微观结构均匀性也较好;高压氢爆处理后制得的磁体样品剩余磁通密度比高速风选制粉方式得到的磁体样品高0.047 T,内禀矫顽力高 193.4 kAm－1,最大磁能积高24.6 kJm－３。     

亚微秒脉冲下高梯度绝缘子的沿面闪络特性

介绍了一种由聚酰亚胺和不锈钢叠加而成的高梯度绝缘子的实验研究工作。该绝缘子样品的直径60 mm,厚度8 mm,在脉冲宽度120 ns(FWHM)的电压脉冲加载下最高获得了接近13 MV/m的绝缘强度。研究了测试方法以及绝缘层厚度与金属层厚度的比例对高梯度绝缘子绝缘强度的影响,并与相同尺寸的普通材料绝缘子的绝缘强度进行了对比。结果表明,高梯度绝缘子的绝缘强度明显高于仅由聚酰亚胺构成的普通绝缘子。