The physical process analysis of the capacitance-voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors

This paper deduces the expression of the Schottky contact capacitance of AlGaN/AlN/GaN high electron mobility transistors (HEMTs), which will help to understand the electron depleting process. Some material parameters related with capacitance-voltage profiling are given in the expression. Detailed analysis of the forward-biased capacitance has been carried on. The gate capacitance of undoped AlGaN/AlN/GaN HEMT will fall under forward bias. If a rising profile is obviously observed, the donor-like impurity or trap is possibly introduced in the barrier.     

Propagation of cylindrical vector beams in a turbulent atmosphere

<正>Based on the extended Huygens-Presnel principle,the propagation of cylindrical vector beams in a turbulent atmosphere is investigated.The intensity distribution and the polarization degree of beams on propagation are studied. It is found that the beam profile has a Gaussian shape under the influence of the atmospheric turbulence,and the polarization distribution shows a dip in the cross section as the beam propagates in the turbulent atmosphere.It is also found that the beam profile and the polarization distribution are closely related to beam parameter and atmospheric turbulence.     

基于随机并行梯度下降算法的多波长激光相干合成

由于受到受激布里渊散射(SBS)等非线性效应的限制,单频激光放大器的功率在百瓦量级,以非单频激光多波长激光作为种子源能够有效地抑制SBS并提高放大器功率.与单频激光相干合成相比,非单频率、多波长激光的相干合成有望将输出激光功率成量级地提高.基于随机并行梯度下降(stochastic parallel gradient descent,SPGD)算法,实现了四波长激光的相干合成.在系统闭环时,四路多波长激光合成后的主瓣能量能够提高3倍,达到理想值的75%.验证了多波长、非单频激光相干合成的可行性,为高功率相干合成的发展提供了新的途径.     

无标度网络上队列资源分配研究

研究了节点队列资源有限的条件下,无标度网络上的信息流动力学过程,发现了网络由自由流通到拥塞的相变现象,提出了一种基于节点度的队列资源分配模型.模型的核心是使节点i的队列长度与kβi成正比(ki为节点i的度,β为分配参数).仿真结果表明,在网络使用最短路径算法进行信息包传送的条件下,β近似等于1.25时队列资源分配最合理,网络容量最大,且该最佳值与队列总资源多少以及网络的规模无关.     

Propagation of phase-locked partially coherent flattened beam array in turbulent atmosphere

Analytical formulae for phase-locked partially coherent flattened beam array propagating in a turbulent atmosphere are derived based on the extended Huygens–Fresnel principle. Beam propagation factor (BPF) is introduced to evaluate the beam quality at the receiving plane. The influence of beam order, transverse coherence width length and the intensity of turbulence is discussed in detail.     

Beam Quality and Power Scalability of Various Multicore Fiber Lasers

Beam quality and power scalability analyses for various multicore fiber lasers （MFL） are presented. In-phase complex amplitude and corresponding far-field intensity distribution of each type of MFL is calculated using the finite-difference time-domain method. It is revealed that the hexagonal ring-type MFL has the best performance in power handling and maintaining beam quality. Further calculation indicates that power encircled in the diffraction-bucket of L-core MFL scales with no more than 0.4L, which chaJlenges the practical worthiness of fielding MFL with a large number of cores.     

Analysis of Ar line spectra from indirectly-driven implosion experiments on SGII facility

This paper reports on the indirectly-driven implosion experiments on SGII laser facility in which Ar emission spectrum from Ar-doped D-filled plastic capsule is recorded with the crystal spectrometer. Spectral features of Ar Heβ line and its associated satellites are analysed to extract the electron temperature and density of the implosion core. Non local thermal equilibrium (NLTE) collisional-radiative atomic kinetics and Strark broadening line shape are included in the present calculation. By comparing the calculated spectrum with the measured one, the core electron temperature and density are inferred to be 700 eV and 2.5×10²³ cm^-3 respectively. With these inferred values of electron temperature and density, neutron yield can be estimated to agree with the measured value in magnitude despite of the very simple model used for the estimation.     

Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer

A novel optically controlled SiCGe/SiC heterojunction transistor with charge-compensation technique has been simulated by using commercial simulator.This paper discusses the electric field distribution,spectral response and transient response of the device.Due to utilizing p-SiCGe charge-compensation layer,the responsivity increases nearly two times and breakdown voltage increases 33%.The switching characteristic illustrates that the device is latch-free and its fall time is much longer than the rise time.With an increase of the light power density and wavelength,the rise time and fall time will become shorter and longer,respectively.In terms of carrier lifetime,a compromise should be made between the responsivity and switching speed,the ratio of them reaches maximum value when the minority carrier lifetime equals 90 ns.     

Propagation of high-power partially coherent fibre laser beams in a real environment

The propagation performance of high-power partially coherent fibre laser beams in a real environment is investigated and the theoretical model of a high-power fibre laser propagating in a real environment is established. The influence of a collimating system and thermal blooming is considered together with atmospheric turbulence and mechanical jitter. The laser energy concentration of partially coherent beams in the far field is calculated and analysed based on the theoretical model. It is shown that the propagation performance of partially coherent beams depends on the collimating system, atmospheric turbulence, mechanical jitter and thermal blooming. The propagation performance of partially coherent beams and fully coherent beams is studied and the results show that partially coherent beams are less sensitive to the influence of thermal blooming, which results in that the energy degeneration for partially coherent beams is only 50% of that for fully coherent beams. Both partially coherent beams and fully coherent beams become less sensitive to thermal blooming when the average structural constant of the refraction index fluctuations increases to 1.7 × 10^-14 m^-2/3. The investigation presents a reference for applications of a high-power fibre laser system.     

Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors

The current voltage (IV) characteristics are greatly influenced by the dispersion effects in AlGaN/GaN high electron mobility transistors. The direct current (DC) IV and pulsed IV measurements are performed to give a deep investigation into the dispersion effects, which are mainly related to the trap and self-heating mechanisms. The results show that traps play an important role in the kink effects, and high stress can introduce more traps and defects in the device. With the help of the pulsed IV measurements, the trapping effects and self-heating effects can be separated. The impact of time constants on the dispersion effects is also discussed. In order to achieve an accurate static DC IV measurement, the steady state of the bias points must be considered carefully to avoid the dispersion effects.