首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   22篇
  免费   0篇
化学   2篇
物理学   20篇
  2012年   1篇
  2008年   1篇
  2005年   1篇
  2001年   1篇
  2000年   1篇
  1998年   2篇
  1996年   1篇
  1992年   1篇
  1991年   2篇
  1989年   3篇
  1988年   2篇
  1987年   1篇
  1986年   1篇
  1979年   1篇
  1977年   2篇
  1973年   1篇
排序方式: 共有22条查询结果,搜索用时 10 毫秒
11.
12.
13.
Reported is the collisionless infrared multiphoton excitation of NO2 molecules initially prepared in an electronically excited state. From the shape of the infrared induced blue-shifted fluorescence spectrum the probability distribution P(n) for the net absorption of n photons has been deduced.  相似文献   
14.
Inhibited spontaneous emission in solid-state physics and electronics   总被引:39,自引:0,他引:39  
  相似文献   
15.
The new TEA (transversely excited atmospheric pressure) CO2 laser can produce ionization of air. No information is as yet available of the effect of this new high-power output laser on man. Repeated impacts of 30 mJ pulses with 100 kW, which produced ionization of air, caused non-specific superficial coagulation necrosis which healed promptly.  相似文献   
16.
17.
The optimal design of photonic band gaps for two-dimensional square lattices is considered. We use the level set method to represent the interface between two materials with two different dielectric constants. The interface is moved by a generalized gradient ascent method. The biggest gap of GaAs in air that we found is 0.4418 for TM (transverse magnetic field) and 0.2104 for TE (transverse electric field).  相似文献   
18.
Sahni S  Luo X  Liu J  Xie YH  Yablonovitch E 《Optics letters》2008,33(10):1138-1140
We propose and demonstrate a novel Ge photodetector on silicon-on-insulator based on a junction field effect transistor structure, where the field-effect transistor gate is replaced by a Ge island with no contact on it. Light incident on the Ge switches on the device by altering the conductance of the Si channel through secondary photoconductivity. The device's sensitivity is also enhanced by a vast reduction in parasitic capacitance. In cw measurements, proof-of-concept detectors exhibit up to a 33% change in Si channel conductance by absorbing only 200 nW of power at 1.55 microm. In addition, pulsed response tests have shown that rise times as low as 40 ps can be achieved.  相似文献   
19.
A simple self-triggered plasma shutter for switching a high power laser beam was demonstrated. The triggering action comes from the surface plasma of a metal target. Several materials were tested and it was found that for copper, the amplitude fluctuation in the triggering was only 5%.  相似文献   
20.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号