V3+:YAG晶体的生长、色心与光谱性能研究

采用石墨电阻加热的温梯法生长了V:YAG晶体,晶体的不同部位呈现两种不同的颜色:浅绿色和黄褐色.通过对比分析不同颜色V:YAG晶体的室温吸收光谱,推断出石墨发热体高温下扩散出来的C可以起到还原作用,提高晶体中V3+tetra离子的浓度,同时诱导了F心的形成.在1300℃下,对不同颜色的V:YAG晶体进行真空退火处理,发现处于八面体格位中的V3+离子在热激发作用下与近邻的四面体格位Al3+离子存在置换反应,由此产生一定浓度的四面体格位V3+离子.同时,F心在退火过程中被完全消除,释放出来的自由电子被高价态的V离子俘获,可以进一步提高晶体中四面体格位V3+离子的浓度.     

C- and N-Amidotrichloroethylation of Azoles

1H-Pyrazoles, triazoles, and imidazoles in reaction with ethoxycarbonylimine and arylsulfonylimines of chloral yield addition products, corresponding 1-(1-amidotrichloroethyl)azoles. Derivatives of 1-alkylpyrazoles and pyrazolones react with chloral 4-chlorophenylsulfonylimine to furnish products of C-amidotrichloroethylation into position 4 of the azole ring.     

聚丙烯孔洞铁电驻极体膜的电极化及其电荷动态特性

根据栅控恒压电晕充电组合反极性电晕补偿充电法的实验结果计算出铁电驻极体的极化强度.结果说明，伴随着薄膜内孔洞气体的Paschen击穿，该铁电体的极化强度随栅压增加而显著上升.利用上述充电方法和热刺激放电(TSD)谱的分析讨论了这类空间电荷型宏观电偶极子，及与其补偿的空间电荷热退极化的电荷动态特性；阐明了这两类俘获电荷的能阱分布，即构成宏观电偶极子的位于孔洞上下介质层内的等值异号空间电荷分别被俘获在深、浅两种能值陷阱内，而位于薄膜表面层的注入空间电荷则被俘获在中等能值陷阱中. 关键词： 反极性电晕补偿充电法 铁电驻极体 充电电流 热刺激放电     

Relativistic shift of the linear Zeeman effect

The efficiency with which a magnetic field acts on sublevels of the first and second doublets of a hydrogen-like atom is shown to vary because of relativistic effects by a factor of 1 ? 2γ(l + 1)/(2l + 3) and 1 ? 2γl/(2l ? 1), respectively, where γ is the ratio of the electron binding energy to the rest energy and l is the quantum number of the orbital angular momentum.     

Possibilities of Production and Use of Rubber-Bitumen Compounds

Procedures are discussed for production of rubber-bitumen compounds based on spent rubber items. A possibility of using these binders for paving is studied experimentally.     

The entropy of Garfinkle-Horne dilaton black hole due to arbitrary spin fields

Using the membrane model which is based on brick wall model, we calculated the free energy and entropy of Garfinkle-Horne dilatonic black hole due to arbitrary spin fields. The result shows that the entropy of scalar field and the entropy of Fermionic field have similar formulas. There is only a coefficient between them.     

A negatively charged silicon vacancy in SiC: Spin polarization effects

The equilibrium geometry and hyperfine interaction constants of the nearest and next-to-nearest neighbor atoms are calculated for a negatively charged silicon vacancy in the high-spin state in cubic SiC. The calculations are performed within the cluster approach in terms of the density-functional theory (DFT). It is shown that the results of calculations with the use of a 70-atom cluster are in good agreement with experimental data. A detailed consideration is given to spin polarization in the electron subsystem and the applicability of a simple LCAO model that is commonly used in the interpretation of the electron paramagnetic resonance data for semiconductors. The spin density distribution for the defect under investigation is analyzed in terms of localized orbitals.     

Analysis and prediction of primary structures of proteins using a computer

On the basis of a computer analysis of four classes of toxic polypeptides, generalized primary structures of each class have been obtained which can be used for planning the synthesis of biologically active compounds.     

High photosensitivity in cis-polyphenylacetylene films irradiated with 60Co γ-ray

This paper reports that ⁶⁰Co γ-ray irradiation can convert cis-polyphenylacetylene (cis-PPA) films prepared with rare-earth coordination catalysts to highly photosensitive materials. The dependence of the photosensitivity on irradiation dose, preparation methods, and microstructure of the PPA films has been investigated by means of a potential discharge technique. The photosensitivity was enhanced with increasing irradiation dose. The critical dose to produce a light response was 5 × 10³ Gy. The maximum surface potential discharge rate was 618 V/s, and the dark decay was approximately 2 V/s for cis-PPA films irradiated with ⁶⁰Co γ-ray (dose: 2 × 10⁵ Gy). The cis-transoidal-PPA and an electrophotographic photoreceptor device incorporating cis-PPA showed a higher irradiation effect. The structure and properties of ⁶⁰Co γ-ray irradiated rare-earth PPA films are similar to the unirradiated films.