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131.
132.
The influence of interdiffusion on eigenstates in an interdiffusion-induced GaAs/AlxGa1-xAs single-quantum-well structure is analysed numerically by the finite element method. In this approach, the confinement potential profile of the interdiffused quantum well structure is nonlinear and is modelled by an error function and, in particular, the nature of the effective mass of an electron is considered. The results show that the number of eigenstates and energy levels varies with the extent of the interdiffusion. Numerical results for the quasi-bound states in the quantum well structure with an applied electric field are also presented.  相似文献   
133.
Translated fromAlgebra i Logika, Vol. 32, No. 3, pp. 288–307, May–June, 1993.  相似文献   
134.
Translated fromIssledovaniya po Prikladnoi Matematike, No. 19, 1992, pp. 24–33.  相似文献   
135.
136.
A gas-discharge gold-vapor laser on self-terminating transitions with operating wavelength λ=312.2 nm has been used to develop a highly efficient system for image transfer. An optical scheme and all its parameters have been chosen optimal for image quality. It has been found both theoretically and experimentally that the best results on micron-structure image transfer are obtained with 2–5-times image reduction. Various types of masks have been used. A 1-µm structure has been resolved due to the choice of optimal exposure time of 10 ms under a period of pulse repetition (0.6 – 0.8) ms; in this case, the minimal fringe dimension was ≈2 µm with an image dimension of 2 mm for a laser tube 1.8 cm in diameter.  相似文献   
137.
Studies have been carried out on the perfection of then-AlxGa1–xSb1–yAsy (0.12x0.26) layer grown on GaSb substrates under different conditions of lattice matching. During the relaxation of the mechanical stresses at first a system of tilt dislocations with a density of up to 5 · 105 cm–2 is formed while in thick layers (h 20 m) a network of misfit dislocations parallel to the heteroboundary is formed. The time required to dissolve a weighed amount of GaAs in the melt is shown to be of major importance for obtaining layers of a solid solution that are isoperiodic with the substrate. The entry of arsenic only in the initial portion of the epitaxial layer can reduce the dislocation density in the layer without decreasing the measured value of Aa. Dissolution of a weighed amount of GaAs in a Ga + Sb melt for two hours at T=730–750°C is sufficient to obtain layers of AlxGa1–xSb1–yAsy solid solution that are isoperiodic with the substrate.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 84–89, January, 1988.In conclusion, we thank L. V. Druzhinina for useful discussions as well as Z. V. Korotchenko, L. S. Khludkova, and F. S. Kim for assistance in the performance of the experiments.  相似文献   
138.
Gal'tsov et al. [Vestn. Mosk. Gos. Univ., Fiz., Astron.,14, No. 5, 614 (1973)] studied the radiation spectrum of N equally spaced charges moving along a circle. In particular, it was shown that as N the intensity of the radiation from the system of charges vanishes. The present study will consider the radiation spectrum of N charges moving along an arbitrary closed curve, randomly distributed in the vicinity of equally spaced points. The coherency factor will be found for the assumption that: a) the distributions of individual charges are not intercorrelated; b) the charge distribution is such that in the vicinity of a given point only one charge is found. It will be shown that as N the radiation intensity tends to a finite limit.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 8–11, March, 1988.  相似文献   
139.
We make use here of the definitions and theorems from our paper: Majorants in classes of subharmonic functions, from the previous issue of this journal.  相似文献   
140.
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