GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

光子结构函数的直接检验

本文基于喷注电荷截面方法,提出了一种直接测量光子结构函数的可行方案。 关键词：     

Particle Simulation of Relativistic Laser Pulse Density Channeling

Two-dimensional particle simulation is carried out to study the interaction between a high-intensity finite-size spot laser beam and a plasma with linear density profile. The laser is allowed to propagate in underdense corona until it is cut off near the critical surface. The intense laser can drive various instabilities through particle collective motion and result in electron heating,while relativistic effect and ponderomotive force can bring strong energy absorption and electron heating in the overdense region. As the laser beam is nonuniform in the transverse direction,a density channel forms and hole boring effect occurs as a result of strong ponderomotive force pushing particle outwards. These processes can be investigated well by particle simulation.     

MCM-41负载SO42-/ZrO2超强酸的性能研究

采用浸渍－焙烧法制备了ＭＣＭ－４１负载ＳＯ＾２－４／ＺｒＯ２（ＳＺ）超强酸催化剂，并考察了其织构性质及酸性的变化规律。结果发现，过高的ＳＺ负载量会引起ＭＣＭ－４１介孔结构的破坏，而负载量过低则不能产生超强酸性。     

算子权移位的换位代数的交换性

令T是以{Wk}∞k=1B(Cn)为权序列的内射算子权移位.设T是强不可约的,而且sup1k<∞‖W-1k‖< ∞.用A′(T)表示T的换位代数,radA′(T)表示A′(T)的Jacobson根.本文刻划了radA′(T)并且证明了商代数A′(T)/radA′(T)是交换的.     

酸度对CeCl3·nH2O晶体热分解过程的影响研究

采用热重-差式扫描量热法（TG—DSC）分析了不同酸度的盐酸-水合氯化铈饱和溶液中生成的CeCl3·nH2O晶体在空气氛围热分解脱水的过程，热分析表明酸度对CeCl3·nH2O晶体结晶形式有影响，氯化铈饱和溶液在盐酸中生成的CeCl3·nH2O晶体较商品CeCl3·nH2O晶体的热分解多一个恒温脱水失重的过程．X射线粉末衍射（XRD）结果表明此商品CeCl3·nH2O晶体为CeCl3·7H2O，盐酸-水合氯化铈饱和溶液中生成的CeCl3·nH2O晶体为含有不同个数结晶水的混合物．     

重组内切纤维素酶Fpendo5A转化三七总皂苷

从嗜热细菌基因组中克隆到1个新的纤维素酶基因,并在大肠杆菌中进行了高效可溶性表达,粗酶液经镍柱亲和层析进行分离纯化.利用快速分离液相色谱-四极杆飞行时间质谱联用仪(RRLC/Q-TOF-MS)对重组内切纤维素酶Fpendo5A转化三七总皂苷的产物结构进行了鉴定,并进一步阐明其转化机制.结果表明,该酶的最适反应温度和pH值分别为80℃和5.5.Fpendo5A能够催化三七总皂苷中的主要皂苷成分,即Ra_1,Rb_1,Rc,Rd和Rg_3的侧链糖基的水解反应,但对于不同的皂苷底物,Fpendo5A选择性催化的侧链糖基类型不同.经鉴定,Fpendo5A转化Ra_1,Rb_1,Rc,Rd和Rg_3的转化产物分别为Rb_2,GypⅩⅦ,CMC_1,F_2和Rh_2.由此可见,Fpendo5A通过水解Rb_1,Rc,Rd和Rg3的C3位的β-(1,2)糖苷键分别生成GypⅩⅦ,CMC1,F2和Rh2.在转化Ra_1时,Fpendo5A通过水解Ra_1的C20位的α-(1,4)木糖苷键生成Rb2.     

立交桥多跨连续梁复位监测

某立交桥在长期使用中,弯桥处多跨连续梁发生横向滑移近40cm,为此对该梁进行顶升和横移的复位施工。使用位移传感器对多跨连续梁的顶升和降落进行监测和控制,同时使用应变片监测多跨连续梁的应力。监测结果表明,相邻桥墩处的连续梁最大竖向位移差在3.40～7.89mm之间,连续梁产生的最大附加应力在-2.06～1.78MPa之间,连续梁没有裂缝产生,从而确保了多跨连续梁在复位施工中的安全。同时对钢支架的应力进行监测,得出钢管混凝土柱始终处于严重偏心受压状态的结论。在长时间监测中,采取分段测试然后测试数据累加的方法,减小了应变仪连续使用中的漂移问题。该桥的监测方法也可以用于其它桥梁的施工中。     

微波消解样品-在线稀释进样-原子吸收光谱法测定锂电池中锂

样品经微波消解及在线稀释进样,采用火焰原子吸收光谱法测定锂电池中锂的含量。在优化的试验条件下,锂的线性范围为0.01～2.5 mg·L~(-1)。该法用于测定锂电池中锂的含量,回收率在94.0%～104.0%之间,相对标准偏差(n=7)在1.6%～4.5%之间。