A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p–n junction

The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-coating.The fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a photodetector.Irradiated by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,respectively.While theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,respectively.The time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.     

块状介质超连续谱相位的相干特性

 块状介质超连续谱由一系列复杂的非线性过程产生。用两路飞秒泵浦光聚焦到熔石英玻璃上得到两束独立的超连续谱,实验上观察到它们形成的稳定干涉条纹;改变两路泵浦光的时间延迟,得到共线超连续谱形成的频率梳。实验证明,块状介质超连续谱的产生保持了泵浦光的相位锁定关系,泵浦光能量抖动和介质的缺陷都不会对超连续谱的相位带来明显的扰动。     

实验教学中学生创新思维能力的培养

在物理实验教学中,教师通过对实验的改进优化、比较分析、探索探究和创新设计,可以达到对学生思维的求异性、类比性、深刻性和发散性的培养的作用.本文主要对实验教学过程中如何培养学生的创新思维能力谈谈体会·     

Specific Heat of a Two-Layer Magnetic Superlattice

The specific heats of both a two-layer ferromagnetic superlattice and a two-layer ferrimagnetic one are studied. It is found that the spin quantum numbers, the interlayer and intralayer exchange couplings, the anisotropy, the applied magnetic field, and the temperature all affect the specific heat of these superlattices. For both the ferromagnetic and ferrimagnetic superlattices, the specific heat decreases with increasing the spin quantum number, the absolute value of interlayer exchange coupling, intralayer exchange coupling, and anisotropy, while it increases with increasing temperature at low temperatures. When an applied magnetic field is enhanced, the specific heat decreases in the twolayer ferromagnetic superlattice, while it is almost unchanged in the two-layer ferrimagnetic superlattice at low field range at low temperatures.     

Properties of Dihadron Correlations for p＋p Collisions at √8NN = 200 GeV

The dihadron azimuthal angular correlations for p＋p collisions at √8NN = 200 GeV are simulated by a multiphase transport model. The dispersions of near-side and away-side peaks, indicated by the width of Gaussian fit functions and the rms width, decrease with the transverse momentum of associated particles. This trend is consistent with the experimental results. Conditional-yields are also calculated to obtain distributions of the associated particle transverse momentum for both away-side and near-side. Furthermore, the hadronic rescattering effects make the conditional-yield distributions softer.     

Strange quark dynamics on hot dense matter under the extreme condition

Production and properties of φ-meson under the extreme hot dense matter which is formed in Au ＋ Au collisions at RHIC energy have been briefly reviewed.The issues are focused on transverse momentum （p T ） spectra of φ,elliptic flow of φ,nuclear modification factor of φ,the ratio of Ω（p T ）/φ（p T ） versus p T,the ratio of Ω（p T /3）/φ（p T /2） versus p T /n q,spin alignment of φ and the enhancement of φ etc.These observables give the significant information of the strange quark dynamics in hot dense matter under the extreme condition.     

激光脉冲能量对激光烧蚀保护气体电离的影响

用Ar气作保护气体 ,气压保持在一个标准大气压 ,用Nd :YAG脉冲激光烧蚀Al靶获得等离子体。利用时空分辨技术 ,采集了激光脉冲能量在 5 2 ,92 ,115和 14 5mJ情况下等离子体辐射的时空分辨谱。详细描述了 115mJ时等离子体的辐射特征 ,简要分析了其他脉冲能量下Ar的特征辐射规律。根据这些脉冲能量下Ar 特征谱线的分布规律 ,简要论述了Ar气体电离与激光脉冲能量的关系。讨论了环境气体电离机制 ,并对结果进行了简单解释。结果发现 ,在本实验采用的能量范围内 ,较高的脉冲能量更容易使环境气体电离 ,产生较强的Ar 离子辐射 ,且Ar 辐射持续时间较长。     

化学非平衡夸克-胶子物质中等质量双轻子的产生

研究了正在进行化学平衡的富重子夸克-胶子物质的双轻子产生，发现由于产生在RHIC能量 的化学非平衡的富重子夸克-胶子物质冷却慢和高的初始温度，导致中等质量双轻子产生重 大增强.因此，中等质量双轻子的增强可以是夸克-胶子物质形成的信号.同时，这个增强能 补偿由于初始夸克化学势增加引起的双轻子抑制，因而双轻子产额的抑制不再是夸克-胶子 物质产生的信号. 关键词： 化学非平衡夸克-胶子物质 热粲夸克 双轻子     

Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch

A low specific on-resistance (R S,on) silicon-on-insulator (SOI) trench MOSFET (metal-oxide-semiconductor-field-effect-transistor) with a reduced cell pitch is proposed.The lateral MOSFET features multiple trenches:two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX) (SOI MT MOSFET).Firstly,the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si;secondly,the oxide trenches cause multiple-directional depletion,which improves the electric field distribution and enhances the reduced surface field (RESURF) effect in the SOI layer.Both of them result in a high breakdown voltage (BV).Thirdly,the oxide trenches cause the drift region to be folded in the vertical direction,leading to a shortened cell pitch and a reduced R S,on.Fourthly,the trench gate extended to the BOX further reduces R S,on,owing to the electron accumulation layer.The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor (LDMOS) to 632 V at the same half cell pitch of 21.5 μm,and R S,on decreases from 419 m · cm 2 to 36.6 m · cm 2.The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.     

Compound buried layer SOI high voltage device with a step buried oxide

A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed.The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer.Furthermore,holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer.Consequently,the electric fields in both the thin LBO and the thick UBO are enhanced by these holes,leading to an improved breakdown voltage.The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer.Moreover,SBO CBL SOI can also reduce the self-heating effect.