关于广义分数次积分的合成

Compositions of generalized fractional integral operators involving Gauss hy-pergeometric function with power weights are studied. Composition formulas for such integrals which are the operators of the same type are obtained. In parti-cular, compositions of two identical operators are given.     

具有随机生存域的随机场

本文研究具有随机开参数集的随机场构造,获得了具有已知有穷维分布的随机场存在和唯一性条件。     

The diffraction of plane gravitational waves by the edge of an ice cover

The diffraction of plane surface gravitational waves by the edge of an ice cover lying on the surface of an incompressible fluid of infinitely great depth is considered. The ice cover is simulated by a thin elastic plate. The wave reflection and transmission coefficients are determined when it interacts with the ice cover. A wave field is constructed in the fluid under the conditions that a periodic lumped force and a lumped moment act on the edge of the ice cover. It is shown that as the incident wavelength increases the reflection coefficient tends to zero and the transmission coefficient tends to unity.     

填充式方钴矿化合物CeOs4Sb12近藤相互作用的非弹性中子散射研究

CeOs₄Sb₁₂晶体中由于导电电子与Ce³⁺ 4f¹电子之间存在c-f杂化作用导致费米面附近存在能量间隙.这种c-f近藤相互作用和能量间隙是理解CeOs₄Sb₁₂物理性质，如近藤绝缘体行为、Ce³⁺磁矩在低温下猝灭以及重费米性等电、磁性质的关键.当用LAM-D中子谱仪对粉末CeOs₄Sb₁₂进行测量时，可以得到不同温度下CeOs₄Sb₁₂的非弹性中子散射谱.结果表明CeOs₄Sb₁₂中存在近藤相互作用，其作用强度为3.1 meV，证实了CeOs₄Sb₁₂为近藤绝缘体.中子测量得出CeOs₄Sb₁₂德拜温度为317 K. 关键词： 非弹性中子散射 填充式方钴矿 近藤绝缘体     

8β-hydroxyeremophil-7(11)-ene-12,8α(4β,6α)-diolide分子的晶体结构

运用层析法、结晶法从狭苞橐吾全草中分离得到艾里莫芬烷型倍半萜8β-hydroxyeremophil-7(11)-ene-12,8α(4β,6α)-diolide化合物,并通过质谱、核磁共振氢谱和碳谱、氢核-氢核相关谱、异核多量子相干谱和异核多键相干谱进行结构鉴定．其单晶经X射线衍射测试表明,其晶体属正交晶系,空间群为P212121,晶胞参数为: a=6．8519(5),b=10．7191(8),c=18．5942(14)A,V=1365．67(18) A3,Z=4,Dc=1．354 mg／m3．F(000)=592,μ=0．101 mm-1     

时间分辨光子计数系统的研究和应用

对由SPCM-AQR-14和MCS组成的时间分辨光子计数系统进行了研究,分析了SPCM和MCS的工作原理及主要特性.利用该系统对磷光物质和洋葱的延迟发光进行了测量,对它们的光子计数率曲线进行拟合,发现其光强衰减符合双曲线规律.     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

两种拔尿管方法对膀胱功能损伤的临床观察

为观察两种不同的拔尿管方法对膀胱功能损伤的差异,将80例患者随机分成两组,分别采用改良法(40例)和常规法(40例)拔除留置尿管,分析比较了两组患者排尿顺利率、逼尿肌功能恢复率及尿道刺激症、尿失禁、尿潴留。结果表明,两组患者拔管后上述指标与情况有显著性差异,P<0.05。提示改良组膀胱功能损伤明显低于对照组。改良的拔管方法是一种值得护理推广应用的好方法。     

从 ${\cal B}^0$ 到 $E(p,q)$ 和 $E_0(p,q)$ 空间的复合算子

设 $\varphi$ 是单位园盘 $D$ 到自身的解析映射, $X$ 是 $D$ 上解析函数的 Banach 空间, 对 $f\in X$, 定义复合算子$C_\varphi $ : $C_\varphi (f)=f\circ \varphi$. 我们利用从 ${\cal B}^0$到 $E(p,q)$ 和 $E_0(p,q)$ 空间的复合算子研究了空间 $E(p,q)$ 和 $E_0(p,q)$, 给出了一个新的特征.     

猜想M(2k,k+1)=3k-1+[(k-1)/2]的反例

Brualdi与Jung在[1]中研究了一类具有固定线和k的n×n矩阵上的最大跳跃数M(n,k),并提出猜想M(2k, k + 1) = 3k - 1 + [(k-1)/2].本文给出了这一猜想的两个反例．