基于自适应方法的Sn／O／H／N／C／Cl反应机理简化

计算包含详细反应机理的复杂反应流问题仍然是十分费时的,已有的反应流计算方法通常采用简化的化学反应机理.传统的机理简化方法大多基于反应条件的稳态假设,如主量组分分析法等.近年来,一种基于自适应化学理论的机理简化的新方法被提出.该方法根据设定的化学精度要求,可实现详细反应机理的最优简化.对Sn/O/H/N/C/Cl详细反应机理的简化结果表明Sn CO2=SnO CO和Sn O2=SnO O为机理中影响Sn氧化最重要的两个基元反应.     

高稳定LD端面泵浦腔内倍频Nd∶YVO4/LBO连续红光激光器

设计出一种能够较好地补偿激光晶体热效应的激光谐振腔,实现了高稳定LD单端泵浦LBO腔内倍频Nd∶YVO4连续红光激光器.当晶体吸收的泵浦功率为24.56 W时,671 nm激光功率达到1.203 W,光-光转换效率4.9%,激光模式为TEM00模.在输出功率为1.08 W时,激光器1 h功率不稳定度为0.52%.     

一种用于冶金炉前快速分析的新仪器——激光诱导击穿光谱仪

冶金炼钢要求快速分析冶金炉前样品来及时掌握冶炼过程。文章介绍了自主研制的一种新型的光谱仪——激光诱导击穿光谱仪,该仪器采用ns级脉宽的Nd∶YAG激光器作为样品离子化光源,激光聚焦样品表面激发产生的等离子体光谱依次经帕邢-龙格光学系统进行分光、光电倍增管探测、门控积分器积分、模拟数字转换器转换后获得的最终结果输入计算机进行数据处理。和目前冶金炉前样品分析常用的光谱仪相比,该仪器无需样品预处理,分析速度快(1 min或更少),准确灵敏度高,非常适用于冶金炉前样品的快速分析。近年来随着光纤技术的迅速发展,使用该仪器进行钢液实时在线分析和动态控制冶金工艺必将成为现实。     

GeV能量的Fe离子在C60薄膜中的辐照效应研究

利用傅立叶转换红外光谱和Raman谱仪分析了0.98 GeV的Fe离子在电子能损Se为3.5 keV/nm时， 不同辐照剂量（5×1010 —8×1013 ions/cm2)下， 在C60薄膜中引起的辐照损伤效应。 分析表明， Fe离子辐照引起了C60分子的聚合与损伤。 在辐照剂量达到一中间值1×1012 ions/cm2， C60分子的损伤得到部分恢复， 归因于电子激发引起的退火效应。 通过对Raman数据的拟合分析， 演绎出Fe离子辐照在C60材料中形成的潜径迹截面或引起损伤的截面约为1.32×10-14 cm2。     

小波域高斯混合模型与中值滤波的混合图像去噪研究

基于高斯混合模型的小波去噪方法并结合中值滤波法对脉冲噪音有较好滤除效果的特点,将这两种方法结合起来,对含有高斯脉冲混合噪音图像进行去噪处理.该算法采用Matlab语言进行仿真.实验结果表明,这种混合去噪方法的效果要优于单纯使用中值滤波或者小波去噪的效果.     

Efficient Compound-Cavity Eye-Safe KTP OPO at 1.57 μm Pumped by an Electro-Optic Q-Switched Nd：YAG Laser

An efficient high-energy eye-safe optical parametric oscillator （OPO） based on a type-Ⅱ non-critically phasematched KTP crystal is demonstrated. The KTP OPO is pumped by a quasi-cw diode side-pumped electrooptic Q-switched Nd：YAG laser in a compound-cavity configuration. The maximum output energy of the signal wavelength at 1.57 μm b 66.5 m J, corresponding to an electrical-to-optical conversion efficiency of 4.47% and an optical-to-optical conversion efficiency of 12.1%. The pulse width （FWHM） is about 3.6 ns with a peak power of 18.5 MW. The output energy is insensitive to repetition rate and demonstrates good stability.     

Depth Dependence of Tetragonal Distortion of a ZnO/Mg0.1Zn0.90/ZnO Heterostructure Studied by Rutherford Backscattering/Channeling

Rutherford backscattering and channeling are used to characterize the structure of a ZnO/Mg0.1Zn0.90/ZnO heterostructare grown on a sapphire （0001） substrate by rf plasma-assisted molecular beam epitaxy. The results show that the Mg0.1Zn0.90 layer has the same hexagonal wurtzite structure as the underlying ZnO layer, and the heterostructure has a good crystalline quality with xmin = 5%, which is the ratio of the backscattering yields of aligned and random spectra in the near-surface region. Using the channeling angular scan around an off-normal （1213） axis in the {1010} plane of both ZnO and MgZnO layer, the tetragonal distortion εT, which is caused by the elastic strain in the epilayer, is determined. The depth dependence of εT is obtained by using this technique. It can clearly be seen that the elastic strain rapidly decreases with the increase in thickness of the ZnO film in the early growth stage and becomes slightly larger in the region of the Mg0.1Zn0.9O layer.     

A 2.048μm Tm,Ho:GdVO4 Laser Pumped Doubly Resonant Optical Parametric Oscillator Based on Periodically Poled Lithium LiNbO3

A multi-grating periodically poled LiNb03 （PPLN） doubly resonant optical parametric oscillator （DROPO） pumped by a 2-ttm laser is demonstrated experimentally. Employing acousto-optically Q-switched Tm,Ho：GdV04 laser with pump pulse of 25ns and repetition rate of lOkHz as pump sources firstly, the noncritically quasi- phase-matched （QPM） tunable mid-IR output in 3.87-4.43 μm is produced. Wavelength tuning is achieved with crystal temperature tuning from 50-180^o C. When the incident average pump power is 3 W at 2.048μm, the total OPO output power of 195mW at wavelength 3.88μm is obtained, corresponding to optical-to-optical conversion efficiency up to 6.5%.     

A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-Migned large-area multi-finger configuration power SiGe heterojunction bipolar transistor （HBT） device （with an emitter area of about 880μm^2） is fabricated with 2μm double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVcEo is 10 V and the collector-base junction breakdown voltage BVcBo is 16 V with collector doping concentration of 1 × 10^17 cm^-3 and thickness of 400nm. The device exhibited a maximum oscillation frequency fmax of 35.5 GHz and a cut-off frequency fT of 24.9 GHz at a dc bias point of Ic = 70 mA and the voltage between collector and emitter is VCE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from OdBm to 21 dBm. A maximum output power of 29.9dBm （about 977mW） is obtained at an input power of 18.SdBm with a gain of 11.47dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, fmax and fT are improved by about 83.9% and 38.3%, respectively.     

Electronic and Magnetic Properties of the p-NPNN

In this paper, we study the electronic band structure and the ferromagnetic properties of the organic radicalp-NPNN by employing density-functional theory with generalized gradient approximation (GGA) and local-spin densityapproximation (LSDA). The density of states, the total energy, and the spin magnetic moment are calculated. Thecalculations reveal that the δ-phase of p-NPNN has a stable ferromagnetic ground state. It is found that an unpairedelectron in this compound is localized in a single occupied molecular orbital (SOMO) constituted primarily of π* (NO)orbitals, and the main contribution of the spin magnetic moment comes from the π* (NO) orbitals. By comparison, wefind that the GGA is more suitable to describe free radical systems than LSDA.