叶绿素紫外吸收特性的分析研究

鉴于光合作用对人类生存和发展的极其重要的地位,本文选取其关键载体——叶绿素进行其光谱的分析研究。在理论分析的基础上,使用WGD-8A型多功能组合光谱仪测量并分析了叶绿素的紫外吸收特性。结合实验结果和前人的研究成果,得出叶绿素在紫外波段281nm和312nm处有较强的吸收峰,紫外线对于光合作用有促进作用的结论,并提供了一种测量叶绿素含量的方法。     

Measurement and Analysis of Composition and Depth Profile of H in Amorphous Si1-xCx:H Films

Composition in amorphous Si1-xCx：H heteroepitaxial thin films on Si （100） by plasma enhanced chemical vapour deposition （PECVD） is analysed. The unknown x （0.45-3.57） and the depth profile of hydrogen in the thin films are characterized by Rutherford backscattering spectrum （RBS）, resonance-nuclear reaction analysis （R-NRA） and elastic recoil detection （ERD）, respectively. In addition, the depth profile of hydrogen in the unannealed thin films is compared to that of the annealed thin films with rapid thermal annealing （RTA） or laser spike annealing （LSA） in nitrogen atmosphere. The results indicate that the stoichiometric amorphous SiC can be produced by PECVD when the ratio of CH4/SiH4 is approximately equal to 25. The content of hydrogen decreases suddenly from 35% to 1% after 1150℃ annealing. RTA can reduce hydrogen in SiC films effectively than LSA.     

Formation Mechanisms of Electrical Conductivity and Optical Properties of ZnO:N Film Produced by Annealing Treatment

The effects of annealing on the chemical states of N dopant, electrical, and optical properties of N-doped ZnO film grown by molecular beam epitaxy (MBE) are investigated. Both the as-grown ZnO:N film and the film annealed in N₂ are of n-type conductivity, whereas the conductivity converts into p-type conductivity for the film annealed in O₂. We suggest that the transformation of conductivity is ascribed to the change in ratio of the N molecular number on O site (N₂)_O to the N atom number on O site (N_O) in ZnO:N films under the various annealed atmosphere. For the ZnO:N film annealed in N₂, the percentage content of (N₂)_O is larger than that of N_O, i.e.the ratio >1, resulting in the n-type conductivity. However, in the case of the ZnO:N film annealed in O₂, the percentage content of (N₂)_O is fewer than that of N_O, i.e., the ratio <1, giving rise to the p-type conductivity. There is an obvious difference between low-temperature (80K) PL spectra of ZnO:N film annealed in N₂ and that of ZnO:N film annealed in O₂. An emission band located at 3.358eV is observed in the spectra of the ZnO:N film after annealed in N₂, this emission band is due to donor-bound exciton (D⁰X). After annealed in O₂, the PL of the donor-bound exciton disappeared, an emission band located at 3.348eV is observed, this emission band is assigned to acceptor-bound exciton (A⁰X).     

Demonstration of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier Diode

A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4mCi/cm^2, an open circuit voltage of 0.49 V and a short circuit current density of 29.44nA/cm^2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.     

高压下限域富勒烯分子体系构筑的新结构

探索新的碳结构是物理、材料等学科关注的热点课题. 富勒烯分子可看成是一种零维碳结构,其独特的结构和优异的性质为构筑新碳结构提供了理想的构筑单元. 本文介绍了利用限域与高压相结合的方法,在富勒烯限域体系研究中取得的进展,包括溶剂化富勒烯、富勒烯填充单壁碳纳米管（Peapod）限域体系的高压结构转变,总结了溶剂分子等对限域富勒烯高压结构相变与新结构形成的影响. 结果对新型碳结构的设计与构筑提供了新的思路与有益参考.     

基于冷原子吸收分光光度法的热解析-低温等离子体脱汞技术研究

研究含汞土壤的修复问题,采用热解析和低温等离子体综合技术探究新途径,调整温度、添加剂、时间等因素来判断脱汞效果并探究其不同形态,分析工艺过程废料的内部联系,并对废气处理进行分析实验。结论如下：(1)通过改良技术的BCR连续萃取法,得出研究区汞的形态主要为有机结合态(53%)。之后依次是氧化物结合态(33%)、酸可提取态(8%)、残渣态(6%)。(2)温度对热解析程度影响较大。在500℃以上的热解析条件下,土壤中的汞浓度不足1.5 mg·kg-1。(3)当选用400℃的解析温度时,40 min汞去除总体完成。在低于1 700 mg·kg-1的浓度下,汞去除率随着土壤中的含量的增大而减小。(4)氯化钙对于热解析的促进作用最强,柠檬酸、升华硫也有一定作用,硫化钠对于汞去除形成阻滞。(5)低温等离子体的最佳状态是电源设置电压为22 kV,频率为660 Hz。整个系统的汞去除程度可达近90%。     

CCl自由基A 2Δ←X 2Ⅱ跃迁REMPI光谱研究

在271～279 nm波长范围内采用REMPI技术研究CCl自由基的A 2Δ光谱.实验观察到12C35Cl以及同位素分子12C37Cl 的A 2Δ←X 2Ⅱ1/2,0-0,1-0和2-1跃迁谱带,其中2-1的跃迁为新观察到谱带.获得了A 2Δ←X 2Ⅱ1/2电子跃迁0-0,1-0,2-1谱带的同位素位移.     

Hibert空间中广义框架的非交性

引入了Hilbert空间H中广义框架的非交性、强非交性,讨论了它们的一些性质;并且引入了保非交算子、强保非交算子,证明了酉算子、可逆算子是强保非交算子,下有界算子、余等距算子是保非交算子.     

Charge Transport and Magnetotransport Properties of Polyimide Irradiated by 80keV Co Ions

Charge transport properties of polyimide films implanted with 80 keV Co ions at two different fluences （series I： 1.25 × 10^17 ions/cm^2, series Ⅱ： 1.75 × 10^17 ions/cm^2） are studied in detail. For series I, the temperature dependence of surface resistivity fits Mott＇s equation very well. It is on the insulating side of the insulator-metal transition （IMT）. However, for series Ⅱ, the temperature dependence of surface resistivity is not in agreement with Mott＇s equation. It is on the metallic side of lMT. The magnetotransport properties of these two series are also studied. No significant magnetoresistive effect is observed for series I at both 5 K and 300 K. For series Ⅱ, an obvious magnetoresistive effect is observed at 5 K, while there is no magnetoresistive effect at 300 K. Rutherford backscattering spectrometry （RBS） is applied to confirm the actual fluence for these two series.     

All-Solid-State Nd:YAG Laser Operating at 1064nm and 1319nm under 885nm Thermally Boosted Pumping

We report a high-effciency Nd：YAG laser operating at 1064 nm and 1319nm, respectively, thermally boosted pumped by an all-solid-state Q-switched Ti：sapphire laser at 885 nm. The maximum outputs of 825.4 m W and 459.4mW, at 1064nm and 1319nm respectively, are obtained in a 8-ram-thick 1.1 at.% Nd：YAG crystal with 2.1 W of incident pump power at 885nm, leading to a high slope efficiency with respect to the absorbed pump power of 68.5% and 42.0%. Comparative results obtained by the traditional pumping at 808nm are presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power at 1064nm under the 885nm pumping are 12.2% higher and 7.3% lower than those of 808rim pumping. At 1319nm, the slope efficiency and the threshold with respect to the absorbed pump power under 885nm pumping are 9.9% higher and 3.5% lower than those of 808 nm pumping. The heat generation operating at 1064 nm and 1319 nm is reduced by 19.8% and 11.1%, respectively.