Effects of Post-Thermal Treatment on Quality of SiC Grown by PVT Method

We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.     

Microscopic Theory of Blue Phases Ⅰ and Ⅱ of Liquid Crystal

The microscopic theory of the blue phases of chiral liquid crystal is proposed. Beginning with the potential between two molecules, by using the cell model of liquid, applying statistical physical method, the distribution function and the free energy of the system are obtained. By using variational approach and zero-order approximation, the differential equation that the order parameter tensor of the blue phase can satisfy is obtained. Then we change the differential equation to the eigenequation problem in quantum mechanics. Considering the symmetry of the blue phases,the order parameter tensors of blue phases Ⅰ and Ⅱ can be made up of the eigenvectors. Our results are the same as the results of Ginzberg-Landau‘s phenomenological theory. The parameters in the order parameter tensors that we calculate in the located system are close to the predecessors‘ results.     

锡(Ⅳ)-偶氮邻苯二酚苯基荧光酮-吐温-80体系分光光度法测定岩石中微量锡

pH值在7.0-8.5的范围内，锡与偶氮邻苯二酚苯基荧光酮、吐温－80形成络合物，其最大吸收峰556nm，摩尔吸光系数2.9×10^5L·mol^-1·cm^-1，锡的含量在0－6μg/25mL范围内遵守比耳定律，本方法对干扰离子的影响和消除进行了研究，本方法已被用于岩石样中锡的测定，结果满意。     

广义Schur补的广义逆

对四分块矩阵A=A(︿) A(︿,︿′)A(︿′,︿) A(︿′)来说 ,如果 A和 A(︿)都是非奇异的 ,则A- 1 (︿′) =(A/︿) - 1 ,这里 A/ ︿=A(︿′) -A(︿′,︿) A(︿) - 1 A(︿,︿′)是 A(︿)在 A中的 Schur补 .王伯英教授指出上述等式 ,对半正定的 Hermitian矩阵而言 ,一般也是不能推广到 Moore-Penrose逆上去的 .在某些限制条件下 ,我们证明了广义逆的主子矩阵与广义 Schur补的关系是密切的 ,它使经典结果成为特例     

对正项级数敛散性判别法的关系的一些探讨

先对正项级数敛生判别法的粗细与强弱问题进行了辨析，然后建立了三个有关正项级数剑散判别的命题，分别比较了三组判别法之间的强弱关系。     

RPC读出条的阻抗匹配

文章对高阻板探测器读出条的阻抗匹配问题进行了研究;引入了一个用于计算带状线特性阻抗的经验公式.测量的特性阻抗与经验公式很好地符合,说明这个经验公式可以用于RPC读出条特性阻抗的计算,以改善RPC读出信号的质量,利于RPC探测器性能的测量.     

k-order Slant Toeplitz Operators on the Bergman Space

In this paper κ-order slant Toeplitz operator on the Bergman space is defined. Some properties like spectrum, commuting are discussed.     

氟氧化物陶瓷的多谱线上转换发光

以氧化硅、氟化铅为基质制备了Er3 :Yb3 共掺杂氟氧化物陶瓷 ,X 射线分析表明陶瓷中存在着 β PbF2 晶相 ,沉积在其中的稀土离子由于具有很低的无辐射跃迁几率而显示出良好的上转换性能。Er3 ,Yb3 离子之间存在的多种能量传递通道 ,导致稀土离子十分丰富的上转换谱线的出现。     

Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells

A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.