Transmutation of nuclear wastes using photonuclear reactions triggered by Compton backscattering photons at the Shanghai laser electrongamma source

Based on the facility of the Shanghai Laser Electron Gamma Source (SLEGS),the transmutation for nuclear wastes such as 137Cs and 129I is investigated.It is found that nuclear waste can be transmuted efficiently via photonuclear reaction triggered by gamma photons generated from Compton backscattering between CO2 laser photons and 3.5 GeV electrons.The nuclear activities of 137Cs and 129I are evaluated and compared with the results of transmutation triggered by bremsstrahlung gamma photons driven by ultra intense laser.Due to the better character of gamma photon spectrum as well as the high brightness of gamma photons,the transmutation rate of Compton backscattering method is much higher than that of the bremsstrahlung method.     

激光点火系统温度效应及其控制技术的研究

激光点火系统应用于武器系统必须符合高低温性能的要求。研究了激光点火系统的高低温特性,得到了激光二极管阈值电流和输出光功率随温度变化的规律。基于对规律的分析,研制了带温控技术的激光点火系统。该系统以单片机为控制部件,以TEC为温控部件,以负温度系数热敏电阻为测温元件。     

提高全息图衍射效率的一种方法

本文介绍用稀释显影提高全息图衍射效率的方法。给出了稀释显影的特性曲线以及衍射效率与显影时间、曝光量之间的关系。得到了三种全息干板的高衍射效率。 关键词：     

非平衡系统Master方程的稳定性

针对非平衡统计中出现的多元线性Master方程,利用“熵产生”和“剩余熵产生”的概念讨论了Master方程在线性平衡区和非线性远离平衡区的稳定性问题。从而得到与Prigo-gine宏观热力学理论中一致的结果。此外还提出了Master方程所决定的“概率流”的概念,给出了概率流分解的具体解析表达式。 关键词：     

Measurement of the KLL Dielectronic Recombination Resonances in He-like to C-like Kr Ions

The KLL dielectronic recombination processes of highly charged He-like to C-like Kr ions have been studied experimentally. The measurement was performed on the newly developed Shanghai electron beam ion trap （Shanghai-EBIT） facility. Characteristic x-rays from both dielectronic recombination and radiative recombination are detected as the electron beam energy is scanned through the resonances. The KLL resonant strengths obtained are 5.41×10^-19, 4.33×10^-19, 3.59×10^-19, 2.05×10^-19 and 0.98×10^-19 cm^2 eV for He-like to C-like Kr ions, respectively.     

关于5-正则图的强协调性

构造了若干个 5 -正则图的强协调值 ,从而证明它们都是强协调的     

激励介质中非线性化学波的格子Boltzmann模型

构造了用于非线性化学波的格子Boltzmann模型.通过设置无对流速度场,使用多重尺度和Chapman Enskog展开,得到了平衡态分布函数的各向同性解.算例考虑了用划痕起搏,在ε²尺度上给出了Selkov系统的模拟结果,再现了远离热力学平衡态的螺旋波结构的经典结果,并与传统数值方法及实验结果进行了比较.     

GaN垒层厚度渐变的双蓝光波长发光二极管

针对单蓝光波长芯片与Y3Al5O12∶Ce3+黄光荧光粉封装白光发光二极管存在显色性不足的问题,提出了采用双蓝光波长芯片激发Y3Al5O12∶Ce3+黄光荧光粉实现高显色性白光发射法,并分析了其可行性.利用金属有机化学气相沉积系统在(0001)蓝宝石衬底上顺序生长两个In0.18Ga0.82N/GaN量子阱和两个In0.12Ga0.88N/GaN量子阱的双蓝光波长发光二极管,并对不同GaN垒层厚度的双蓝光波长发光二极管的光电性能进行分析,结果表明沿n-GaN到p-GaN方向减小GaN垒层厚度能实现双蓝光发射,并有较好的发光效率.交流阻抗谱结果显示相关双蓝光波长发光二极管可以用一个电阻Rp与电容Cp并联后与一个Rs串联电路来模拟,GaN垒层变化能调节并联电阻和电容,对串联电阻没有影响.此外,基于垒层减小的双蓝光波长芯片激发Y3Al5O12∶Ce3+荧光粉实现了高显色指数的白光发射.     

低气压直流放电金属铜等离子体

在原子蒸气激光同位素分离技术中用直流电源实现原子化和激发电离过程,低气压下使用焊锡短路阴、阳极得到了金属铜等离子体稳定射流。在气压10^-3Pa、功率0.9kW下,测得稳定放电的伏安特性曲线和光谱强度图。通过计算得到电子密度在10⁹cm^-3左右、电子温度在0.69eV左右。     

Germanium PMOSFETs with Low-Temperature Si2H6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability

We investigate negative bias temperature instability （NBTI） on high performance Ge p-channel metal-oxide- semiconductor field-effect transistors （pMOSFETs） with low-temperature Si2H6 passivation. The Ge pMOSFETs exhibit an effective hole mobility of 311 cm2/V.s at an inversion charge density of 2.5 × 1012 cm^-2. NBTI characterization is performed to investigate the linear transconductance （GM,lin） degradation and threshold voltage shift （△VTH） under NBT stress. Ge pMOSFETs with a lOyr lifetime at an operating voltage of -0.72 V are demonstrated. The impact of the Si2H6 passivation temperature is studied. As the passivation temperature increases from 350℃ to 550℃, the degradation of NBTI characteristics, e.g., GM,lin loss, △VTH and an operating voltage for a lifetime of lOyr, is observed.