Leakage current and pyroelectric properties of compositionally graded (Pb,Ca)TiO<Subscript>3</Subscript> films

Highly (100)-oriented, compositionally graded (Pb,Ca)TiO₃ (PCT) thin films with a Ca content from 0 to 24 mol% on Pt/Ti/SiO₂/Si substrates were prepared by a sol-gel process. The graded structure of the Au/PCT/Pt film capacitor showed a well-saturated hysteresis loop at an applied field of 500 kV/cm with remanent polarization (P_r), and coercive electric field (E_c) values of 9.35 C/cm² and 130 kV/cm, respectively. At 100 kHz, the dielectric constant and dielectric loss of the film were 129 and 0.024, respectively. The leakage current density of the graded PCT film was less than 1.0×10^-7 A/cm² over a voltage range from 0 to 4 V. The conduction current depended on the voltage polarity. At low electric field (110 and 180 kV/cm, respectively, for Pt and Au electrodes biased negatively), the Au/PCT and PCT/Pt interfaces form a Schottky barrier. At high electric field (>110 kV/cm), the Au electrode biased negatively shows space-charge-limited current (SCLC) behavior. The temperature dependencies of the pyroelectric coefficients of the graded PCT film were measured by a dynamic technique. From 20 to 82 °C, the pyroelectric coefficients of graded PCT film remain steady in the range 106 to 118 C/m²K. The detectivity figure of merit (F_D) of the graded PCT film was 6.7×10^-6 Pa^-0.5. PACS 77.80.-s; 77.70.+a; 77.22.-d; 51.50.+v; 68.37.-d     

Photorefractive shearing interferometer

A novel method of obtaining shearing interferogram by slightly moving the crystal in a photorefractive interferometer is proposed. This method can measure the phase of an object itself instead of its diffraction field, and it is easy to realize continuously changeable shearing distance in any lateral direction and introduce carrier fringes at the same time. Both the theoretical analysis and experimental verification are given.     

Temperature dependent Raman scattering in polycrystalline Bi4Ti3O12 thin films

Polycrystalline Bi₄Ti₃O₁₂ thin films were prepared on quartz substrates by pulsed laser deposition. The films were crystallized in the orthorhombic layer perovskite structure confirmed by X-ray diffraction and Raman spectroscopy. The Raman spectra are strongly dependent on temperature. A subtle phase transition in the temperature range 473-573 K exists in polycrystalline BTO thin films, which is evidenced by the disappearance of the Raman band at 116 cm⁻¹ and appearance of a new Raman band at 151 cm⁻¹. The two broad Raman bands centered at the 57 and 93 cm⁻¹ at 300 K break up into clusters of several sharp Raman peaks at 77 K, due to monoclinic distortion of orthorhombic structure at low temperature in the as-prepared Bi₄Ti₃O₁₂ thin films.     

A determination of the Cabibbo-Kobayashi-Maskawa parameter |V us| using KL decays

We present a determination of the Cabibbo-Kobayashi-Maskawa parameter |V(us)| based on new measurements of the six largest K(L) branching fractions and semileptonic form factors by the KTeV (E832) experiment at Fermilab. We find |V(us)|=0.2252+/-0.0008(KTeV)+/-0.0021(ext), where the errors are from KTeV measurements and from external sources. We also use the measured branching fractions to determine the CP violation parameter |eta(+-)|=(2.228+/-0.005(KTeV)+/-0.009(ext))x10(-3).     

Wave dispersion relation of two-dimensional plasma crystals in a magnetic field

The wave dispersion relation in a two-dimensional strongly coupled plasma crystal is studied by theoretical analysis and molecular dynamics simulation taking into account a constant magnetic field parallel to the crystal normal. The expression for the wave dispersion relation clearly shows that high-frequency and low-frequency branches exist as a result of the coupling of longitudinal and transverse modes due to the Lorenz force acting on the dust particles. The high-frequency and the low-frequency branches are found to belong to right-hand and left-hand polarized waves, respectively.     

Mechanism of hopping transport in disordered mott insulators

By using a combination of detailed experimental studies and simple theoretical arguments, we identify a novel mechanism characterizing the hopping transport in the Mott insulating phase of Ca2-xSrxRuO4 near the metal-insulator transition. The hopping exponent alpha shows a systematic evolution from a value of alpha=1/2 deeper in the insulator to the conventional Mott value alpha=1/3 closer to the transition. This behavior, which we argue to be a universal feature of disordered Mott systems close to the metal-insulator transition, is shown to reflect the gradual emergence of disorder-induced localized electronic states populating the Mott-Hubbard gap.     

Direct observation of large electronic domains with memory effect in doped manganites

We use a spatially resolved, direct spectroscopic probe for electronic structure with an additional sensitivity to chemical compositions to investigate high-quality single crystal samples of La(1/4)Pr(3/8)Ca(3/8)MnO3, establishing the formation of distinct insulating domains embedded in the metallic host at low temperatures. These domains are found to be at least an order of magnitude larger in size compared to previous estimates and exhibit memory effects on temperature cycling in the absence of any perceptible chemical inhomogeneity, suggesting long-range strains as the probable origin.     

Ordering and excitations in the field-induced magnetic phase of Cs3Cr2Br9

Field-induced magnetic order has been investigated in detail in the interacting spin 3/2 dimer system Cs3Cr2Br9. Elastic and inelastic neutron scattering measurements were performed up to H=6 T, well above the critical field H(c1) approximately 1.5 T. The ordering displays incommensurabilities and a large hysteresis before a commensurate structure is reached. This structure is fully determined. Surprisingly, the lowest excitation branch never closes. Above H(c1), the gap increases slowly with the field. An analysis in terms of projected pseudospins is given.     

X-ray directional dichroism of a polar ferrimagnet

In a polar ferrimagnet GaFeO3, we have found a novel magneto-optical effect, termed x-ray nonreciprocal directional dichroism (XNDD), that the x-ray absorption at around the K edge of an Fe ion depends on whether the x-ray propagation vector is parallel or antiparallel to the outer product of the magnetization and electric-polarization vectors. The XNDD spectroscopy as demonstrated here can be a useful tool to probe the local magnetism in noncentrosymmetric systems such as magnetic interfaces and nanostructures.     

Magnetization-induced second harmonic generation in a polar ferromagnet

Second harmonic generation (SHG) induced by spontaneous magnetization has been investigated for a polar ferromagnetic crystal of GaFeO3. The Kerr rotation of the second harmonic light becomes gigantic with decreasing temperature below the magnetic transition temperature (approximately =205 K), e.g., as large as 73 degrees at 100 K. The magnetic domains can be visualized by using that large nonlinear Kerr rotation. The spectrum of the magnetization-induced SHG as measured indicates the two-photon resonant electronic process on a Fe3+ ion in the crystal.