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991.
Laser alloying of Ni–P electroless deposited layer with aluminum substrate was carried out by Nd–YAG pulsed laser. The phase composition and microstructure of the alloyed layers produced by different laser power densities were identified by X-ray diffractionary (XRD), scanning electron microscope (SEM) accompanied by energy dispersion X-ray analysis (EDS) and transmission electron microscope (TEM). Furthermore, the surface roughness of the alloyed layers was characterised by confocal laser scanning microscope (CLSM). The results showed that the characteristic dendritic or lamellar microstructures were observed in the alloyed layers. The phase constituents of the alloyed zones were intermetallic compounds of nickel–aluminum NiAl, Al3Ni and Al3Ni2, as well as some non-equilibrium phases and amorphous phases depending on the employed laser power density. As a result, the microhardness of the alloyed layer with Ni–P amorphous phases formed at laser power density 5.36×109 W/m2 reached to HV0.1 390. 相似文献
992.
W. Wang K.Y. Li J. Wang W. Han F. Wang Y. Xiang F.Q. Li H.T. Jia L.Q. Wang W. Zhong X.M. Zhang S.Z. Zhao B. Feng 《Optics & Laser Technology》2011,43(3):683-686
The dependence of the phase matching (PM) angle on temperature in type-I second harmonic generation (SHG) and type-II third harmonic generation (THG) of KDP is experimentally investigated. The experimental results show that as the crystal temperatures vary by 1 °C, the external PM angles of the KDP doubler and tripler change 100 μrad and 220 μrad, respectively. The PM angle of KDP tripler is more sensitive to temperature variation than is that of the KDP doubler. Comparing the numerical calculations and the previous reports, a discrepancy has been found among the different reported results. Based on the analytical solution of the temperature dependence of the SHG process it is shown that a small error in the thermo-optic coefficients of the crystal is the main factor source of the discrepancy. 相似文献
993.
The internal friction of partially Sr-substituted Pr(Ba1?xSrx)2Cu3O7?δ (x = 0, 0.05, 0.1, 0.2, 0.3, and 0.4) ceramics was measured by the vibrating-reed method from liquid nitrogen temperature to room temperature at kilohertz frequencies. The intensity of the internal friction peak, which appears around 250 K, decreases upon Sr doping. The result is explained in terms of a possible combining structural freezing transition of CuO5 square pyramids and oxygen atoms in CuOx chains. Another internal friction peak around 134 K was observed in tetragonal Pr(Ba0.6Sr0.4)2Cu3O7?δ which is temporarily explained by the hopping of holes in the CuO2 layers. 相似文献
994.
W. Liu J.S. Wang X.L. Liao S.J. Zheng G.T. Ma J. Zheng S.Y. Wang 《Physica C: Superconductivity and its Applications》2011,471(5-6):156-162
To a high-Tc superconducting (HTS) maglev system which needs large levitation force density, the magnetized bulk high-Tc superconductor (HTSC) magnet is a good candidate because it can supply additional repulsive or attractive force above a permanent magnet guideway (PMG). Because the induced supercurrent within a magnetized bulk HTSC is the key parameter for the levitation performance, and it is sensitive to the magnetizing process and field, so the magnetized bulk HTSC magnets with different magnetizing processes had various levitation performances, not only the force magnitude, but also its force relaxation characteristics. Furthermore, the distribution and configuration of the induced supercurrent are also important factor to decide the levitation performance, especially the force relaxation characteristics. This article experimentally investigates the influences of different magnetizing processes and trapped fields on the levitation performance of a magnetized bulk HTSC magnet with smaller size than the magnetic inter-pole distance of PMG, and the obtained results are qualitatively analyzed by the Critical State Model. The test results and analyses of this article are useful for the suitable choice and optimal design of magnetized bulk HTSC magnets. 相似文献
995.
H. Yagyuda Y. Nakajima T. Tamegai Y. Kanai T. Kambara 《Physica C: Superconductivity and its Applications》2011,471(21-22):790-793
We report the effect of defects introduced by heavy-ion irradiation with 2.6 GeV uranium ions at several matching fields in single crystalline Ba(Fe0.925Co0.075)2As2. The suppression rate of Tc at lower matching fields is larger than that at higher matching fields. The critical current density calculated from magnetic hysteresis loop is enhanced up to 4.1 × 106 A/cm2 at 2 K. Clear dips in magnetic hysteresis loops near zero field are observed at high matching fields. Field dependence of normalized relaxation rate is suppressed, and the relationship between the dip and the relaxation rate is discussed. 相似文献
996.
A. Amira A. Saoudel Y. Boudjadja L. Amirouche N. Mahamdioua A. Varilci M. Akdogan C. Terzioglu M.F. Mosbah 《Physica C: Superconductivity and its Applications》2011,471(23-24):1621-1626
Superconducting ceramics of Bi1.6Pb0.4Sr2Ca2Cu3OyFx (x = 0–0.6) are prepared in air by conventional solid state reaction and characterized. The study shows that the melting point of the samples decreases as fluorine content increases. As a consequence, the grain size increases with the doping level and for x = 0.6, the sample is completely deformed and presents a concave shape making impossible the measurements on it. The Vickers microhardness reaches its maximum for x = 0.2. The analysis of the X-ray diffraction results reveals that all the samples are composed of only Bi(Pb)-2212 and Bi(Pb)-2223 phases. The highest proportion of the high Tc phase (Bi(Pb)-2223) is also observed for x = 0.2 and is about 67.32%. The refinement of cell parameters is done by considering the structural modulation. The results show that the doping leads to a reduction of cell volume as well as the a axis component of modulation. From resistivity versus temperature measurements, it is shown that the doped phases exhibit higher onset critical transition temperatures than the undoped one. The residual resistivity increases with fluorine content suggesting that the doping introduces structural defects and disorder into the samples. The obtained critical current density at 77 K under zero magnetic field also increases with fluorine doping. 相似文献
997.
In this paper, we present a method for obtaining sharp interfaces in two-phase incompressible flows by an anti-diffusion correction, that is applicable in a straight-forward fashion for the improvement of two-phase flow solution schemes typically employed in practical applications. The underlying discretization is based on the volume-of-fluid (VOF) interface-capturing method on unstructured meshes. The key idea is to steepen the interface, independently of the underlying volume-fraction transport equation, by solving a diffusion equation with reverse time, i.e. an anti-diffusion equation, after each advection time step of the volume fraction. As the solution of the anti-diffusion equation requires regularization, a limiter based on the directional derivative is developed for calculating the gradient of the volume fraction. This limiter ensures the boundedness of the volume fraction. In order to control the amount of anti-diffusion introduced by the correction algorithm we propose a suitable stopping criterion for interface steepening. The formulation of the limiter and the algorithm for solving the anti-diffusion equation are applicable to 3-dimensional unstructured meshes. Validation computations are performed for passive advection of an interface, for 2-dimensional and 3-dimensional rising-bubbles, and for a rising drop in a periodically constricted channel. The results demonstrate that sharp interfaces can be recovered reliably. They show that the accuracy is similar to or even better than that of level-set methods using comparable discretizations for the flow and the level-set evolution. Also, we observe a good agreement with experimental results for the rising drop where proper interface evolution requires accurate mass conservation. 相似文献
998.
The Ramanujan Journal - Let $$\overline{p}(n)$$ denote the overpartition function. Engel showed that for $$n\ge 2$$ , $$\overline{p}(n)$$ satisfy the Turán inequalities, that is,... 相似文献
999.
We measured shot noise and submillimeter-wave response in a superconducting NbN tunnel junction that had a subharmonic gap structure on the current-voltage (I-V) curve. We found that the observed effective charge, defined from the noise-current ratio, tends to a steplike function of voltage. In the presence of submillimeter-wave radiation of frequency v, novel step structures spaced by hv/2e below and above the half-gap voltage clearly appeared on the I-V curve, overlapping the ordinary photon-assisted tunneling steps spaced by hv/e. Observation of these features provides clear evidence that coherent multiple Andreev reflection processes occur in the NbN tunnel junction with low barrier transparency. 相似文献
1000.
Tian XC Ban Y Abe K Abe K Aihara H Arinstein K Asano Y Aulchenko V Aushev T Bakich AM Banerjee S Barberio E Barbero M Bay A Bedny I Bitenc U Bizjak I Blyth S Bondar A Bozek A Bracko M Brodzicka J Browder TE Chang P Chao Y Chen A Chen KF Chen WT Cheon BG Chistov R Choi SK Choi Y Choi YK Chuvikov A Dalseno J Danilov M Dash M Dong LY Drutskoy A Eidelman S Enari Y Fang F Fratina S Gabyshev N Gershon T Gokhroo G Golob B Gorisek A Haba J Hara T Hayasaka K Hayashii H Hazumi M Hokuue T Hoshi Y Hou S 《Physical review letters》2005,95(23):231801
Using 281 fb-1 of data from the Belle experiment recorded at or near the (4S) resonance, we have measured the rates of the "wrong-sign" decays D0 --> K+ pi- pi0 and D0 --> K+ pi- pi+ pi- relative to those of the Cabibbo-favored decays D0 --> K- pi+ pi0 and D0 --> K- pi+ pi+ pi-. These wrong-sign decays proceed via a doubly Cabibbo-suppressed amplitude or via D0-D0 mixing; the latter has not yet been observed. We obtain R(WS)(K pi pi0) = [0.229 +/- 0.015(stat)(+0.013)(-0.009)(syst)]% and R(WS)(K3pi) = [0.320 +/- 0.018(stat)(+0.018)(0.013)(syst)]%. The CP asymmetries are measured to be -0.006 +/- 0.053 and -0.018 +/- 0.044 for the K+ pi- pi0 and K+ pi- pi+ pi- final states, respectively. 相似文献