首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   371351篇
  免费   3699篇
  国内免费   1180篇
化学   184857篇
晶体学   6025篇
力学   18032篇
综合类   14篇
数学   42373篇
物理学   124929篇
  2021年   3513篇
  2020年   3662篇
  2019年   4086篇
  2018年   5605篇
  2017年   5802篇
  2016年   8040篇
  2015年   4617篇
  2014年   7729篇
  2013年   17740篇
  2012年   14030篇
  2011年   16981篇
  2010年   12541篇
  2009年   12454篇
  2008年   15138篇
  2007年   14975篇
  2006年   13803篇
  2005年   11984篇
  2004年   11138篇
  2003年   9879篇
  2002年   9800篇
  2001年   12302篇
  2000年   9103篇
  1999年   7013篇
  1998年   5722篇
  1997年   5562篇
  1996年   5091篇
  1995年   4418篇
  1994年   4340篇
  1993年   4148篇
  1992年   4766篇
  1991年   4954篇
  1990年   4691篇
  1989年   4534篇
  1988年   4298篇
  1987年   4484篇
  1986年   4128篇
  1985年   5263篇
  1984年   5277篇
  1983年   4299篇
  1982年   4397篇
  1981年   4106篇
  1980年   4026篇
  1979年   4356篇
  1978年   4385篇
  1977年   4420篇
  1976年   4324篇
  1975年   4043篇
  1974年   3999篇
  1973年   3977篇
  1972年   2795篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
91.
92.
The ZnS:Cu,Al,Au (P22G) phosphor powder was bombarded by an electron beam in an O2 ambient, Ar ambient and other mixture of gases. These gases consisted of mixtures of O2 and COx, and O2, COx and Ar gas. Auger electron spectroscopy (AES) was used to monitor changes in the surface composition of the P22G phosphor during electron bombardment. When the P22G phosphor powder was exposed to the electron beam in a water-rich O2 ambient, a chemically limited ZnO layer was formed on the surface. The electron beam degradation of the P22G phosphor powder was also performed in a dry O2 ambient and a layer of ZnSO4 was formed on the surface. The ZnSO4 formation decayed exponentially with time and it is postulated that this was due to the diffusion of the charge reactants through the ZnSO4 film to the reaction interfaces. The P22G phosphor exposed to the electron beam in an Ar ambient and to the other gas mixtures degraded at a lower rate than in the case of the O2 ambient. This suggests that Ar and COx may suppress the degradation of the P22G phosphor powder.  相似文献   
93.
94.
95.
96.
In the present paper, the notion of norm series with respect to the norm residue symbol is generalized to high-dimensional local fields. Necessary and sufficient conditions for the existence of norm series are obtained. Bibliography: 12 titles.__________Translated from Zapiski Nauchnykh Seminarov POMI, Vol. 305, 2003, pp. 60–83.  相似文献   
97.
98.
The kinetics of decay of a phase hologram in a semiconductor CdF2 crystal with bistable In centers is studied. Kinetic constants of the hologram decay are found, and the potential relief of the bistable center is plotted. The resolving power of the crystal is evaluated and recording of a transparency is demonstrated.  相似文献   
99.
We report on the effect of commercially important polysaccharides (maltodextrins with variable dextrose equivalent (Paselli SA-2, MD-6 and MD-10) on the surface activity at the air–water interface of small-molecule surfactants (sms), possessing different hydrophobic–lipophilic balance ((SSL (Na+), the main component is a sodium salt of stearol–lactoyl lactic acid, and PGE (080), polyglycerol ester of C18 fatty acid), and widely used in food products. A marked change of the surface activity of sms was found in the presence of maltodextrins by tensiometry. The combined data of laser multiangle light scattering and mixing calorimetry have suggested that this result is governed by specific complex formation between maltodextrins and sms in aqueous medium. Measurements have been made of the molar mass, the second virial coefficient and the enthalpy of intermolecular interactions in aqueous solutions. The implication of a degree of polymerization of maltodextrins in this phenomenon was shown. The interrelation between the molecular parameters of the formed complexes and their surface activity at the air–water interface has been revealed and discussed.  相似文献   
100.
CRACK DETECTION THROUGH WAVELET TRANSFORM FOR A RUN-UP ROTOR   总被引:1,自引:0,他引:1  
  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号