Film thickness dependence of electro-optic effect in epitaxial BaTiO3 thin films

Based on the phenomenological Landau-Devonshire theory, we investigate the film thickness dependence of ferroelectric and electro-optic properties of epitaxial BaTiO₃ thin films grown on SrTiO₃ and MgO substrates. By using the effective substrate lattice parameter concept, the film thickness dependence of misfit strain is incorporated into the theory. Therefore, the film thickness dependence of ferroelectric and electro-optic properties in epitaxial BaTiO₃ thin films can be explained. Moreover, a large quadratic electro-optic effect was obtained in the BaTiO₃ thin films, which is in good agreement with the experimental result of BaTiO₃ thin films on the MgO substrate.     

179Au的1/2[660](πi13/2)转动带

利用能量为164—180MeV的³⁵Cl束流,通过重离子核反应¹⁴⁹Sm(³⁵Cl,5n)研究了¹⁷⁹Au的高自旋态能级结构.实验进行了γ射线的激发函数、X-γ和γ-γ-t符合测量.基于对实验测量结果的分析,首次建立了¹⁷⁹Au的1/2[660](πi_13/2)转动带.结合已有的实验数据,着重讨论了奇AAu核中1/2[660](πi_13/2)转动带的带头激发能随中子数的变化     

Thermalization of the flow of sputtered target atoms during ion-plasma deposition of films

The boundary of the zone in which sputtered atoms are thermalized in the substrate–target drift space during the ion-plasma magnetron deposition of films is determined theoretically and experimentally. A comparison of the thicknesses of films deposited on the front and back sides of substrates situated at different distances from the target makes it possible to divide the flow of atoms sputtered toward substrates into direct and diffusion flows and to determine the dimensions of the spatial zone in which sputtered atoms are thermalized. The experimental data are in quantitative agreement with the results of a statistical simulation of the thermalization process of atomic particles during the ion-plasma deposition. This simulation enables optimization of the technology of defect-free growth of films with uniform thickness on substrates with complex 3D configuration.     

Effects of an AlN passivation layer on the microstructure and electronic properties of AlGaN/GaN heterostructures

Effects of an AlN passivation layer on the microstructure and electronic properties of AlGaN/GaN heterostructures were investigated by X-ray diffraction and Hall effect measurements. AlN passivation induced an additional compressive stress in an AlGaN barrier layer instead of an additional tensile stress induced by Si₃N₄ passivation. The change of strain after passivation contributes in a relatively small proportion to the variation of the carrier concentration in AlGaN/GaN heterostructures compared with the contribution from passivation of surface traps. The results from Hall effect measurements show that the AlN passivation layer has a better effect on passivation of deep levels than the Si₃N₄ film and also results in a remarkable increase in mobility of the two-dimensional electron gas. PACS 73.40.Kp; 71.55.Eq; 81.65.Rv; 81.05.Ea; 61.05.cp     

Elastic scattering from a sapphire microsphere placed on a silica optical fiber coupler: Possible applications to biosensing

Elastic light scattering is performed in the original band of optical fiber communication at 1300 nm for a 500 μm sapphire microsphere placed on a silica optical fiber half coupler. The morphology dependent resonances (MDRs) are observed in the transverse magnetically (TM) polarized and transverse electrically (TE) polarized 0^° transmission and 90^° elastic scattering obtained from the sapphire microsphere. The TE and TM MDRs can be detected selectively with the use of a Glan polarizer. The TE and TM polarization selectivity provides the ability to select relative MDR to BG levels. The TM polarization provides higher MDR signal to background ratio (SBR) and is suitable for optical monitoring, biological sensing or any other optoelectronic application that requires a high resolution optical filter. The polar angular mode spacing of 0.36 nm of the resonances correlates well with the optical size of the sapphire microsphere. The autocorrelation of the 90^° elastic scattering spectra also shows peaks at 0.36 nm. The spectral linewidths of the resonances are on the order of 0.1 nm, which corresponds to quality factors on the order of 10⁴. A sapphire sphere with a radius of 500 μm and relative refractive index of 1.31, resonances will red-shift by 1.01 nm (0.077%). This shift is on the order of 10 linewidths, making sapphire biophotonic sensors an interesting alternative to silica biophotonic sensors.     

Diode-pumped Nd:YVO<Subscript>4</Subscript>/Nd:YLF laser at 488 nm

We present a laser architecture to obtain continuous-wave blue radiation at 488 nm. A 808 nm diode-pumped the Nd:YVO₄ crystal emitting at 914 nm. A part of the pump power was then absorbed by the Nd:YVO₄ crystal. The remaining was used to pump the Nd:YLiF₄ (Nd:YLF) crystal emitting at 1047 nm. Intracavity sum-frequency mixing at 914 and 1047 nm was then realized in a BiB₃O₆ (BiBO) crystal to reach the blue radiation. We obtained a continuous-wave output power of 339 mW at 488 nm with a pump laser diode emitting 18.3 W at 808 nm.     

Interaction of Short Laser Pulses in Wavelength Range from Infrared to X‐ray with Metals,Semiconductors, and Dielectrics

Laser‐matter interaction is defined by an electronic band structure of condensed matter and frequency ω_L of electromagnetic radiation. In the range of moderate fluences, the energy absorbed by electrons from radiation finally thermalizes in the ion thermal energy. The thermalization processes are different for optical as compared with X‐ray quanta and for metals relative to semiconductors and dielectrics, since the light absorption and electron‐electron, electron‐ion dynamics are sensitive to the electron population in a conduction band and the width of a forbidden gap. Although the thermalization processes are different, the final state is simply a heated matter. Laser heating creates powerful stresses in a target if duration of a laser pulse τ_L is short in acoustic time scale. Nucleation and material removal take place under such stresses. Such way of removal is called here the spallative ablation. Thus the spallative ablation is an ablation mechanism universally important for qualitatively different materials and quanta (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Luminescence and scintillation of Eu2+‐doped high silica glass

High silica glass doped with Eu²⁺ ions was prepared as a scintillating material by impregnation of Eu ions into a porous silica glass followed by reduction sintering in CO atmosphere. A dominant emission band of the Eu²⁺ 5d–4f transition peaking around 430 nm was observed in the luminescence spectrum with the excitation peak around 280 nm and no emission from Eu³⁺ was present. Photoluminescence decay kinetics was governed by decay times of a few microseconds. The Eu²⁺‐doped high silica glass exhibited comparable energy resolution and slightly higher photoelectron yield with respect to the Bi₄Ge₃O₁₂ crystal in the pulse height spectra for X‐ray photon energies within 22–60 keV. Furthermore, a factor of 1.2 higher radioluminescence intensity was observed as well. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)