On α-I-continuous and α-I-open functions

Montgomery and Vaughan improved a theorem of Erd?s and Fuchs for an arbitrary sequence. Sárközy extended this theorem of Erd?s and Fuchs for two arbitrary sequences which are "near" in a certain sense. Using the idea of Jurkat (differentiation of the generating function), we will extend similarly the result of Montgomery and Vaughan for "sufficiently near" sequences.     

Photoemission study of the modification of the electronic structure of transition-metal overlayers on TiO2 surfaces II. Cr on TiO2(0 0 1)

The electronic states of the Cr overlayers on TiO₂(0 0 1) surfaces have been investigated using angle-resolved and resonant photoemission spectroscopy with synchrotron radiation. At lower coverages, Cr deposition on TiO₂(0 0 1) creates two well separated in-gap emissions due to the formation of surface Ti³⁺ (3d¹) ions and Cr³⁺ (3d³) ions. At higher coverages, the in-gap emission is developed into the 2-peak-structure emission of Cr 3d character. The corresponding state is considered to be of metallic nature from the viewpoint of the high ability of oxygen adsorption, but has no Fermi edge, indicating a possibility of forming small Cr clusters on TiO₂(0 0 1) at this stage.     

An efficient sampling method for stochastic inverse problems

A general framework is developed to treat inverse problems with parameters that are random fields. It involves a sampling method that exploits the sensitivity derivatives of the control variable with respect to the random parameters. As the sensitivity derivatives are computed only at the mean values of the relevant parameters, the related extra cost of the present method is a fraction of the total cost of the Monte Carlo method. The effectiveness of the method is demonstrated on an example problem governed by the Burgers equation with random viscosity. It is specifically shown that this method is two orders of magnitude more efficient compared to the conventional Monte Carlo method. In other words, for a given number of samples, the present method yields two orders of magnitude higher accuracy than its conventional counterpart.     

An exponentially fitted special second-order finite difference method for solving singular perturbation problems

An exponentially fitted special second-order finite difference method is presented for solving singularly perturbed two-point boundary value problems with the boundary layer at one end (left or right) point. A fitting factor is introduced in a tri-diagonal finite difference scheme and is obtained from the theory of singular perturbations. Thomas Algorithm is used to solve the system and its stability is investigated. To demonstrate the applicability of the method, we have solved several linear and non-linear problems. From the results, it is observed that the present method approximates the exact solution very well.     

Fabrication of bamboo-shaped GaN nanorods

Bamboo-shaped GaN nanorods were formed through a simple sublimation method. They were characterized by means of X-ray powder diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The TEM image showed that the nanorods were bamboo-like. XRD, HRTEM and SAED patterns indicated that the nanorods were single-crystal wurtzite GaN. Received: 8 January 2001 / Accepted: 28 April 2001 / Published online: 20 December 2001     

Controllability of Functional Integro-Differential Inclusions with an Unbounded Delay

In this paper, a sufficient condition is established for the controllability of neutral functional integro-differential inclusions with an unbounded delay in Banach spaces. The approach used is a fixed-point theorem for condensing maps due to Martelli and the theory of analytic semigroup of linear operators. Communicated by F. Zirilli Research supported by NNSF of China, by the Teaching and Research Award Program for Outstanding Young Teachers in Higher Education Institutions of the Ministry of Education of China, and by the Qing Lan Talent Engineering Fund QL-05-164 of Lanzhou Jiaotong University. The authors are grateful to Professor F. Zirilli and two anonymous referees for valuable suggestions improving this paper.     

On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV _Ga ^2– and the triply positively charged defect complex (AS_Ga+V _As)³⁺, with As_Ga being the antisite defect of an As atom occupying a Ga site andV _As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV _Ga ^2– /(As_Ga+V _As)³⁺ is supposed to be able to pin the GaAs Fermi level at approximately theE _v +0.6 eV level position, which requires that the net free energy of theV _Ga/(As_Ga+V _As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE _v +1.2 eV level position instead of the neededE _v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.