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971.
972.
Photoluminescence (PL) spectra and time-resolved PL are measured from around 10 to 300 K for the InGaN/GaN single quantum wells (SQWs) with well widths of 1.5, 2.5, 4 and 5 nm. For the SQWs with the well widths of 1.5 and 2.5 nm, the peak position of PL exhibits an S-shaped shift with increasing temperature. The radiative recombination time τRAD begins to increase at the temperature for the position to change from the red-shift to the blue-shift. The steep increase of τRAD is observed beyond the temperature from the blue-shift to the red-shift. For the SQWs with the well widths of 4 and 5 nm, the peak position of PL exhibits a monotonic red-shift. τRAD decreases at first and then increases with temperature. It is about 100-times longer in the low temperature region and about 10-times longer at room temperature as compared with those of the SQWs with narrower widths.  相似文献   
973.
The electronic states of the Cr overlayers on TiO2(0 0 1) surfaces have been investigated using angle-resolved and resonant photoemission spectroscopy with synchrotron radiation. At lower coverages, Cr deposition on TiO2(0 0 1) creates two well separated in-gap emissions due to the formation of surface Ti3+ (3d1) ions and Cr3+ (3d3) ions. At higher coverages, the in-gap emission is developed into the 2-peak-structure emission of Cr 3d character. The corresponding state is considered to be of metallic nature from the viewpoint of the high ability of oxygen adsorption, but has no Fermi edge, indicating a possibility of forming small Cr clusters on TiO2(0 0 1) at this stage.  相似文献   
974.
Based on Monte Carlo simulations, the stable magnetization configurations of an antiferromagnet on a quasiperiodic tiling are derived theoretically. The exchange coupling is assumed to decrease exponentially with the distance between magnetic moments. It is demonstrated that the superposition of geometric frustration with the quasiperiodic ordering leads to a three-dimensional noncollinear antiferromagnetic spin structure. The structure can be divided into several ordered interpenetrating magnetic supertilings of different energy and characteristic wave vector. The number and the symmetry of subtilings depend on the quasiperiodic ordering of atoms.  相似文献   
975.
Wu  F. Y.  Kunz  H. 《Journal of statistical physics》2004,116(1-4):67-78
We consider a vertex model on the simple-quartic lattice defined by line graphs on the lattice for which there is always an odd number of lines incident at a vertex. This is the odd 8-vertex model which has eight possible vertex configurations. We establish that the odd 8-vertex model is equivalent to a staggered8-vertex model. Using this equivalence we deduce the solution of the odd8-vertex model when the weights satisfy a free-fermion condition. It is found that the free-fermion model exhibits no phase transitions in the regime of positive vertex weights. We also establish the complete equivalence of the free-fermion odd 8-vertex model with the free-fermion 8-vertex model solved by Fan and Wu. Our analysis leads to several Ising model representations of thefree-fermion model with pure 2-spin interactions.  相似文献   
976.
The magnetic and electrical properties of high-quality single crystals of A-site disordered (solid solution) Ln0.5Ba0.5MnO3 are investigated near the phase boundary between the spin-glass insulator and colossal-magnetoresistive ferromagnetic metal, locating near Ln=Sm. The temperature dependence of the ac susceptibility and the x-ray diffuse scattering of Eu0.5Ba0.5MnO3 are analyzed in detail. The uniformity of the random potential perturbation in Ln0.5Ba0.5MnO3 crystals with a small bandwidth yields, rather than the phase separation, an homogeneous short ranged charge or orbital order which gives rise to a nearly atomic spin-glass state. Remarkably, this microscopically disordered "charge-exchange-glass" state alone is able to bring forth the colossal magnetoresistance.  相似文献   
977.
By using a combination of detailed experimental studies and simple theoretical arguments, we identify a novel mechanism characterizing the hopping transport in the Mott insulating phase of Ca2-xSrxRuO4 near the metal-insulator transition. The hopping exponent alpha shows a systematic evolution from a value of alpha=1/2 deeper in the insulator to the conventional Mott value alpha=1/3 closer to the transition. This behavior, which we argue to be a universal feature of disordered Mott systems close to the metal-insulator transition, is shown to reflect the gradual emergence of disorder-induced localized electronic states populating the Mott-Hubbard gap.  相似文献   
978.
Effects of temperature and pressure on magnetic, elastic, structural, and thermal properties of Tb5Si2Ge2 have been studied by means of macroscopic (thermal expansion and magnetization) and microscopic (neutron powder diffraction) techniques. We present evidence that the high-temperature second-order ferromagnetic transition can be coupled with the low-temperature first-order structural phase change into a single first-order magnetic-crystallographic transformation at and above a tricritical point in the vicinity of 8.6 kbar. This pressure-induced coupling has a remarkable effect on the magnetocaloric effect, transforming Tb5Si2Ge2 from an ordinary into a giant magnetocaloric effect material.  相似文献   
979.
The present systematic Raman scattering experiments reveal the phason and amplitudon of the charge density wave (CDW) mode in the charge stripes of La(2-x)Sr(x)CuO4. Only about 15% of the electronic density of states condenses into the CDW state. The symmetries of the CDW modes change by the rotation of the stripes at the insulator-metal transition. The energy of the phason is finite at 0.06 < or = x < or = 0.1 and zero at x = 0.035 and 0.115 < or = x < or = 0.135, which suggests that the CDW is commensurate at 0.06 < or = x < or = 0.1 and incommensurate otherwise. The zero-energy phason seems to reduce T(c) at x = 1/8.  相似文献   
980.
An extension of the classical Ising model to a situation including a source of spin-flip excitations localized on the scale of individual spins is considered. The scenario is realized by scanning tunneling microscopy of the Si(100) surface at low temperatures. Remarkable details, corresponding to the passage of phasons through the tunnel junction, are detected by the STM within the short span between two atoms comprising an individual Si dimer.  相似文献   
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