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991.
Y.X. Yin 《Applied Surface Science》2006,253(3):1584-1589
Wear resistant Cu-based solid solution (Cuss) toughened Cr5Si3 metal silicide composite coatings were fabricated on austenitic stainless steel AISI321 by laser cladding process. Due to the rapidly solidified microstructural characteristics and the excellent toughening effect of Cuss on Cr5Si3, the Cuss/Cr5Si3 coatings have outstanding wear resistance and low coefficient of friction under room temperature dry sliding wear test conditions coupling with hardened 0.45% C steel. 相似文献
992.
H. Kobayashi T. Sakurai Y. Yamashita T. Kubota O. Maida M. Takahashi 《Applied Surface Science》2006,252(21):7700-7712
X-ray photoelectron spectroscopy (XPS) measurements under bias can observe low density interface states for metal-oxide-semiconductor (MOS) diodes with low densities. This method can give energy distribution of interface states for ultrathin insulating layers for which electrical measurements cannot be performed due to a high density leakage current. During the XPS measurements, a bias voltage is applied to the rear semiconductor surface with respect to the ∼3 nm-thick front platinum layer connected to the ground, and the bias voltage changes the occupation of interface states. Charges accumulated in the interface states shift semiconductor core levels at the interface, and thus the analysis of the bias-induced shifts of the semiconductor core levels measured as a function of the bias voltage gives energy distribution of interface states. In the case of Si-based MOS diodes, the energy distribution and density of interface states strongly depend on the atomic density of silicon dioxide (SiO2) layers and the interfacial roughness, respectively. All the observed interface state spectra possess peaked-structures, indicating that they are due to defect states. An interface state peak near the Si midgap is attributable to isolated Si dangling bonds at the interface, while those above and below the midgap to Si dangling bonds interacting weakly with Si or oxygen atoms in the SiO2 layers. A method of the elimination of interface states and defect states in Si using cyanide solutions has been developed. The cyanide method simply involves the immersion of Si in KCN solutions. Due to the high Si-CN bond energy of ∼4.5 eV, the bonds are not ruptured at 800 °C and upon irradiation. The cyanide treatment results in the improvement of the electrical characteristics of MOS diodes and solar cells. 相似文献
993.
Y.P. Venkata Subbaiah 《Applied Surface Science》2006,253(5):2409-2415
ZnS films have been deposited on glass substrates by close-spaced evaporation (CSE) technique. The films were grown at different temperatures in the range, 200-350 °C. The layers have been characterized with X-ray diffractometer (XRD), atomic force microscope (AFM), energy dispersive analysis of X-rays (EDAX) and optical spectrophotometer to evaluate the quality of the layers for photovoltaic applications. The studies showed that the optimum substrate temperature for the growth of ZnS layers was 300 °C. The films grown at these temperatures exhibited cubic structure with nearly stoichiometric composition. The AFM data revealed that the films had nano-sized grains with a grain size of ∼40 nm. The optical studies exhibited direct allowed transition with an energy band gap of 3.61 eV. The other structural and optical parameters such as lattice stress, dislocation density, refractive index and extinction coefficient were also evaluated. The temperature-dependent conductivity measured in the range, 303-523 K showed a change in the conduction mechanism at 120 °C. The activation energy values evaluated using the temperature dependence of electrical conductivity are 7 and 29 meV at low and high temperature regions, respectively. 相似文献
994.
Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg0.7Cd0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg0.7Cd0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg0.7Cd0.3Te epilayer. Hall-effect measurements showed that n-Hg0.7Cd0.3Te epilayers were converted to p-Hg0.7Cd0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg1 − xCdxTe epilayers are improved by annealing and that as-grown n-Hg1 − xCdxTe epilayers can be converted to p-Hg1 − xCdxTe epilayers by in situ annealing. 相似文献
995.
Nanometer scale Al/AlN multilayers have been prepared by dc magnetron sputtering technique with a columnar target. A set of Al/AlN multilayers with the Al layer thickness of 2.9 nm and the AlN layer thickness variation from 1.13 to 6.81 nm were determined. Low angle X-ray diffraction (LAXRD) was used to analyze the layered structure of multilayers. The phase structure of the coatings was investigated with grazing angle XRD (GAXRD). Mechanical properties of these multilayers were thoroughly studied using a nanoindentation and ball-on-disk micro-tribometer. It was found that the multilayer hardness and reduced modulus showed no strong dependence on the AlN layer thickness. Al2.9 nm/AlN1.13 nm multilayer had more excellent tribological properties than single layers and other proportion multilayers with a lowest friction coefficient of 0.15. And the tribological properties of all the multilayers are superior to the AlN single layer. 相似文献
996.
The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl2-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH4/H2/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl2 discharges is smooth, whereas that after etching in CH4/H2/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH4/H2/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH4/H2/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication. 相似文献
997.
Aubert B Bona M Boutigny D Couderc F Karyotakis Y Lees JP Poireau V Tisserand V Zghiche A Grauges E Palano A Chen JC Qi ND Rong G Wang P Zhu YS Eigen G Ofte I Stugu B Abrams GS Battaglia M Brown DN Button-Shafer J Cahn RN Charles E Gill MS Groysman Y Jacobsen RG Kadyk JA Kerth LT Kolomensky YG Kukartsev G Lynch G Mir LM Orimoto TJ Pripstein M Roe NA Ronan MT Wenzel WA del Amo Sanchez P Barrett M Ford KE Hart AJ Harrison TJ Hawkes CM Watson AT Held T Koch H Lewandowski B Pelizaeus M Peters K 《Physical review letters》2006,97(23):232001
We report the first observation of an excited singly charmed baryon Omega c* (css) in the radiative decay Omega c0gamma, where the Omega c0 baryon is reconstructed in the decays to the final states Omega(-)pi+, Omega(-)pi+pi0, Omega(-)pi+pi(-)pi+, and Xi(-)K(-)pi+pi+. This analysis is performed using a data set of 230.7 fb(-1) collected by the BABAR detector at the PEP-II asymmetric-energy B factory at the Stanford Linear Accelerator Center. The mass difference between the Omega c* and the Omega c0 baryons is measured to be 70.8+/-1.0(stat)+/-1.1(syst) MeV/c2. We also measure the ratio of inclusive production cross sections of Omega c* and Omega c0 in e+e(-) annihilation. 相似文献
998.
Aubert B Barate R Bona M Boutigny D Couderc F Karyotakis Y Lees JP Poireau V Tisserand V Zghiche A Grauges E Palano A Chen JC Qi ND Rong G Wang P Zhu YS Eigen G Ofte I Stugu B Abrams GS Battaglia M Brown DN Button-Shafer J Cahn RN Charles E Gill MS Groysman Y Jacobsen RG Kadyk JA Kerth LT Kolomensky YG Kukartsev G Lynch G Mir LM Oddone PJ Orimoto TJ Pripstein M Roe NA Ronan MT Wenzel WA del Amo Sanchez P Barrett M Ford KE Harrison TJ Hart AJ Hawkes CM Morgan SE Watson AT Goetzen K Held T Koch H 《Physical review letters》2006,97(17):171803
The photon spectrum in B-->Xs gamma decay, where Xs is any strange hadronic state, is studied using a data sample of 88.5 x 10(6) e+ e- --> Upsilon(4S) --> BB decays collected by the BABAR experiment at the Stanford Linear Accelerator Center. The partial branching fraction, DeltaB(B --> Xs gamma) = (3.67+/-0.29(stat)+/-0.34(syst)+/-0.29(model)) x 10(-4), the first moment = 2.288+/-0.025+/-0.017+/-0.015 GeV, and the second moment E2(gamma) = 0.0328+/-0.0040+/-0.0023+/-0.0036 GeV2 are measured for the photon energy range 1.9 GeV < E gamma < 2.7 GeV. They are also measured for narrower E gamma ranges. The moments are then fit to recent theoretical calculations to extract the heavy quark expansion parameters m(b) and mu2(pi) and to extrapolate the partial branching fraction to E gamma > 1.6 GeV. In addition, the direct CP asymmetry A(CP)(B-->X(s+d gamma) is measured to be -0.110+/-0.115(stat)+/-0.017(syst). 相似文献
999.
Abazov VM Abbott B Abolins M Acharya BS Adams M Adams T Agelou M Ahn SH Ahsan M Alexeev GD Alkhazov G Alton A Alverson G Alves GA Anastasoaie M Andeen T Anderson S Andrieu B Anzelc MS Arnoud Y Arov M Askew A Asman B Jesus AC Atramentov O Autermann C Avila C Ay C Badaud F Baden A Bagby L Baldin B Bandurin DV Banerjee P Banerjee S Barberis E Bargassa P Baringer P Barnes C Barreto J Bartlett JF Bassler U Bauer D Bean A Begalli M Begel M Belanger-Champagne C Bellantoni L Bellavance A Benitez JA 《Physical review letters》2006,97(16):161802
We present a search for a neutral particle, pair produced in pp[over] collisions at sqrt[s]=1.96 TeV, which decays into two muons and lives long enough to travel at least 5 cm before decaying. The analysis uses approximately 380 pb(-1) of data recorded with the D0 detector. The background is estimated to be about one event. No candidates are observed, and limits are set on the pair-production cross section times branching fraction into dimuons + X for such particles. For a mass of 10 GeV and lifetime of 4x10(-11) s, we exclude values greater than 0.14 pb (95% C.L.). These results are used to limit the interpretation of NuTeV's excess of dimuon events. 相似文献
1000.
Seebauer EG Dev K Jung MY Vaidyanathan R Kwok CT Ager JW Haller EE Braatz RD 《Physical review letters》2006,97(5):055503
The technologically useful properties of a crystalline solid depend upon the concentration of defects it contains. Here we show that defect concentrations as deep as 0.5 microm within a semiconductor can be profoundly influenced by gas adsorption. Self-diffusion rates within silicon show that nitrogen atoms adsorbed at less than 1% of a monolayer lead to defect concentrations that vary controllably over several orders of magnitude. The results show that previous measurements of diffusion and defect thermodynamics in semiconductors may have suffered from neglect of adsorption effects. 相似文献