Tunneling radiation of a Gibbons-Maeda dilaton black hole

We use the Parikh-Wilczek method to treat Hawking radiation as a tunneling process across the event horizon and calculate the emission rate of a Gibbons-Maeda dilaton black hole. We show that if self-gravitation is taken into account, then the radiation deviates from the purely thermal spectrum, and the corrected spectrum is consistent with an underlying unitary theory. __________ Translated from Teoreticheskaya i Matematicheskaya Fizika, Vol. 151, No. 1, pp. 172–175, April, 2007.     

Asymptotic and boundary integral formulae for the computational reconstruction of small conductivity imperfections

In this paper we investigate the electrostatic problem of determining conductivity profiles from the knowledge of boundary currents and voltages. We obtain an improved estimate for the voltage potential of a two-dimensional conductor having finitely many circular inclusions and piecewise constant conductivity profile. We derive an asymptotic expansion for the voltage potential in terms of the reference voltage potential and the location, size, and conductivity of the inhomogeneities. This representation is used to formulate the nonlinear least squares problem for estimating the location and size of the inhomogeneities. Required boundary data for the voltage potential are generated numerically by solving a system of integral equations. Computational experiments are presented to demonstrate the effectiveness of our identification procedure.     

Theory of Valuations on Manifolds: A Survey

This is a non-technical survey of a recent theory of valuations on manifolds constructed in [A10], [A11], [AF] and [A12], and actually a guide to this series of articles. We also review some recent related results obtained by a number of people. Received: February 2006, Revision: June 2006, Accepted: June 2006     

UPML formulation for truncating conductive media in curvilinear coordinates

This work presents a formulation based on UPML for truncating conductive media by using a local and non-orthogonal coordinate system to solve Maxwell’s equations by the FDTD method. The detailed procedure for obtaining the UPML equations for this case is shown and the complete equation set is provided.     

Charge density fluctuation of low frequency in a dusty plasma

The charge density fluctuation of low frequency in a dusty plasma, which is derived from the longitudinal dielectric permittivity of the dusty plasma, has been studied by kinetic theory. The results show that theP value, which describes the relative charge density on the dust in the plasma, and the charging frequency of a dust particle Ω _c , which describes the ratio of charge changing of the dust particles, determine the character of the charge density fluctuation of low frequency. For a dusty plasma ofP≪1, when the charging frequency Ω _c , is much smaller than the dusty plasma frequency ω_d, there is a strong charge density fluctuation which is of character of dust acoustic eigenwave. For a dusty plasma ofP≫1, when the frequency Ω _c , is much larger than ω _d there are weaker fluctuations with a wide spectrum. The results have been applied to the ionosphere and the range of radius and density of dust particles is found, where a strong charge density fluctuation of low frequency should exist.     

泛代数的二次扩张

在本文中引入了泛代数的二次扩张的概念，解决了ＴＵ－ＥＣ（Ａ）和ＵＴ－ＥＣ（Ａ）的存在、真类和基数问题，范畴ＴＵ－ＥＣ（Ａ）（及ＵＴ－ＥＣ（Ａ）），并得到了有关二次扩张的几个同构定理，还对一点二次扩张作了讨论。     

On self-reciprocal polynomials

In this paper we establish a sharp result concerning integral mean estimates for self-reciprocal polynomials.     

A Degenerate Stefan Problem with Two Free Boundaries

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On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV _Ga ^2– and the triply positively charged defect complex (AS_Ga+V _As)³⁺, with As_Ga being the antisite defect of an As atom occupying a Ga site andV _As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV _Ga ^2– /(As_Ga+V _As)³⁺ is supposed to be able to pin the GaAs Fermi level at approximately theE _v +0.6 eV level position, which requires that the net free energy of theV _Ga/(As_Ga+V _As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE _v +1.2 eV level position instead of the neededE _v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.