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31.
32.
基于SiGe HBT(异质结双极晶体管)的物理模型,建立了描述SiGe HBT的大信号等效电路模型.该等效电路模型考虑了准饱和效应和自热效应等,模型分为本征和非本征两部分,物理意义清晰,拓扑结构相对简单.该模型嵌入了PSPICE软件的DEVEO(器件方程开发包)中.在PSPICE软件资源的支持下,利用该模型对SiGe HBT器件进行了交直流特性模拟分析,模拟结果与理论分析结果相一致,并且与文献报道的结果符合较好.
关键词:
SiGe HBT
等效电路模型
PSPICE 相似文献
33.
34.
Shenghan Zhou Houxiang Liu Bang Chen Wenkui Hou Xinpeng Ji Yue Zhang Wenbing Chang Yiyong Xiao 《Entropy (Basel, Switzerland)》2021,23(6)
The traditional sequential pattern mining method is carried out considering the whole time period and often ignores the sequential patterns that only occur in local time windows, as well as possible periodicity. Therefore, in order to overcome the limitations of traditional methods, this paper proposes status set sequential pattern mining with time windows (SSPMTW). In contrast to traditional methods, the item status is considered, and time windows, minimum confidence, minimum coverage, minimum factor set ratios and other constraints are added to mine more valuable rules in local time windows. The periodicity of these rules is also analyzed. According to the proposed method, this paper improves the Apriori algorithm, proposes the TW-Apriori algorithm, and explains the basic idea of the algorithm. Then, the feasibility, validity and efficiency of the proposed method and algorithm are verified by small-scale and large-scale examples. In a large-scale numerical example solution, the influence of various constraints on the mining results is analyzed. Finally, the solution results of SSPM and SSPMTW are compared and analyzed, and it is suggested that SSPMTW can excavate the laws existing in local time windows and analyze the periodicity of the laws, which solves the problem of SSPM ignoring the laws existing in local time windows and overcomes the limitations of traditional sequential pattern mining algorithms. In addition, the rules mined by SSPMTW reduce the entropy of the system. 相似文献
35.
A quantum mechanical approach has been used to investigate on the potential for using two naturally occurring flavonoids: quercetin and luteolin as candidates for organic semiconductor. Selection of flavonoids enables to evaluate the effects of hydroxyl group structural features. The relationship between molecular packing and charge transport in flavonoids is presented. The calculated results indicate that quercetin should be an ideal candidate as high-performance p-type organic semiconductor material, while luteolin is predicted as n-type organic semiconductor material. The predicted maximum electron mobility value of quercetin is 0.075 cm2 V?1 s?1, which appears at the orientation angle near 91°/271° of conducting channel on the reference planes b–c. Theoretical investigation of natural semiconductors is helpful for designing higher performance electronic materials used in biochemical and industrial field to replace expensive and rare organic materials. 相似文献
36.
Abstract In acetonitrile solutions, the exchange reaction is bimolecular in the Tl+ + 18C6 system, while in the Tl+ + pentaglyme system the associative-dissociative and the bimolecular mechanisms coexist at room temperature and the bimolecular exchange reaction dominates at 263° K. For the bimolecular mechanism in the case of Tl+ + 18C6 and the associative-dissociative mechanism in the case of Tl+ + pentaglyme, the activation energies of the exchange reactions change with temperature. At 298° K, in the Tl+ + 18C6 system the activation energy for the bimolecular exchange reaction is ≈ 2 kcal.mol?1 and exchange rate constant (k1) is (4.1 ± 0.1) × 107 s?1mol?1; in the Tl+ + pentaglyme system, the activation energy for the associative-dissociative exchange reaction is ≈ 5 kcal mol?1 and the decomplexation rate constant (k?2) is (2.2 ± 0.4) X 105 s?1. The activation energy for the bimolecular exchange in the Tl+ + pentaglyme system was determined to be 3.00 ± 0.05 kcal.mol?1 and the exchange rate constant (3.0 ± 0.1) X 108 s?1 mol?1. 相似文献
37.
The spin-Hamiltonian (SH) parameters (g factors g||, g⊥ and hyperfine structure constants A||, A⊥) and d–d transitions for ZnCdO:Cu2+ are calculated based on the perturbation formulas for a 3d9 ion in tetragonally elongated octahedra. Good agreement between the calculated results (four SH parameters and three optical absorption bands) and the experimental results can be obtained. Since the SH parameters are sensitive to the local structure of a paramagnetic impurity center, the tetragonal distortion (characterized by the relative elongation ratio ρ ≈ 3.5% along the C4 axis) of the impurity center due to the Jahn–Teller effect is also acquired from the calculations. The negative and positive signs of hyperfine structure constants A|| and A⊥ for ZnCdO:Cu2+, respectively, are also suggested in the discussions. 相似文献
38.
污水处理、油田采油、液态金属冷却反应堆和磁流体动力转换器等领域采用气力提升系统有其显著优势.由于不同液体介质与气体介质密度对气力提升系统性能影响较大,因此本文基于Fluent仿真软件,采用欧拉模型、k-ω剪切应力输运湍流模型数值模拟了氮气-水、氮气-煤油、氮气-水银及空气-水、氩气-水、氮气-水下气力提升系统内气液两相流动行为,分析了系统稳定时提升立管内气相体积分数、提升液体流量、提升效率、提升管出口处液体径向速度的变化规律.研究结果表明:1)氮气-水、氮气-煤油、氮气-水银系统中,提升管内液体介质密度越大,提升管内气相体积分数越小、提升液体流量越大、提升效率越高;2)空气-水、氩气-水、氮气-水系统中,提升管内气体介质密度越大,提升管内气相体积分数越小、提升液体流量越大、提升效率峰值越小;3)提升管出口处提升液体径向速度随气体充入量的不断增加而整体波动升高,最终管轴中心附近液体速度较大,管壁附近液体速度较小.本文研究成果为污水处理、气举采油、液态重金属冷却核反应堆和磁流体动力转换器等应用领域的气力提升技术的优化提供科学的理论基础. 相似文献
39.
Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers 下载免费PDF全文
Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iVoc of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%. 相似文献
40.
The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz. 相似文献